{"citation":{"ama":"Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. <i>Physical Review X</i>. 2014;3(4). doi:<a href=\"https://doi.org/10.1103/PhysRevX.3.041025\">10.1103/PhysRevX.3.041025</a>","mla":"Mongillo, Massimo, et al. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.” <i>Physical Review X</i>, vol. 3, no. 4, American Physical Society, 2014, doi:<a href=\"https://doi.org/10.1103/PhysRevX.3.041025\">10.1103/PhysRevX.3.041025</a>.","short":"M. Mongillo, P. Spathis, G. Katsaros, S. De Franceschi, P. Gentile, R. Rurali, X. Cartoixà, Physical Review X 3 (2014).","ieee":"M. Mongillo <i>et al.</i>, “PtSi clustering in silicon probed by transport spectroscopy,” <i>Physical Review X</i>, vol. 3, no. 4. American Physical Society, 2014.","chicago":"Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Silvano De Franceschi, Pascal Gentile, Riccardo Rurali, and Xavier Cartoixà. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.” <i>Physical Review X</i>. American Physical Society, 2014. <a href=\"https://doi.org/10.1103/PhysRevX.3.041025\">https://doi.org/10.1103/PhysRevX.3.041025</a>.","ista":"Mongillo M, Spathis P, Katsaros G, De Franceschi S, Gentile P, Rurali R, Cartoixà X. 2014. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 3(4).","apa":"Mongillo, M., Spathis, P., Katsaros, G., De Franceschi, S., Gentile, P., Rurali, R., &#38; Cartoixà, X. (2014). PtSi clustering in silicon probed by transport spectroscopy. <i>Physical Review X</i>. American Physical Society. <a href=\"https://doi.org/10.1103/PhysRevX.3.041025\">https://doi.org/10.1103/PhysRevX.3.041025</a>"},"month":"01","date_created":"2018-12-11T11:53:52Z","acknowledgement":"This work was supported by the Agence Nationale de la Recherche and by the EU through the ERC Starting Grant HybridNano","date_published":"2014-01-01T00:00:00Z","oa":1,"publisher":"American Physical Society","status":"public","year":"2014","day":"01","intvolume":"         3","publist_id":"5363","date_updated":"2021-01-12T06:53:02Z","volume":3,"extern":1,"type":"journal_article","publication_status":"published","publication":"Physical Review X","issue":"4","abstract":[{"text":"Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states.","lang":"eng"}],"main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1407.5413"}],"_id":"1761","doi":"10.1103/PhysRevX.3.041025","author":[{"first_name":"Massimo","full_name":"Mongillo, Massimo","last_name":"Mongillo"},{"last_name":"Spathis","first_name":"Panayotis","full_name":"Spathis, Panayotis N"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","full_name":"Georgios Katsaros","first_name":"Georgios"},{"last_name":"De Franceschi","full_name":"De Franceschi, Silvano","first_name":"Silvano"},{"first_name":"Pascal","full_name":"Gentile, Pascal","last_name":"Gentile"},{"last_name":"Rurali","first_name":"Riccardo","full_name":"Rurali, Riccardo"},{"first_name":"Xavier","full_name":"Cartoixà, Xavier","last_name":"Cartoixà"}],"quality_controlled":0,"title":"PtSi clustering in silicon probed by transport spectroscopy"}