{"publist_id":"5368","quality_controlled":0,"date_published":"2012-06-13T00:00:00Z","publication_status":"published","month":"06","doi":"10.1021/nl300930m","citation":{"ama":"Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. <i>Nano Letters</i>. 2012;12(6):3074-3079. doi:<a href=\"https://doi.org/10.1021/nl300930m\">10.1021/nl300930m</a>","ieee":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, and S. De Franceschi, “Multifunctional devices and logic gates with undoped silicon nanowires,” <i>Nano Letters</i>, vol. 12, no. 6. American Chemical Society, pp. 3074–3079, 2012.","chicago":"Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, and Silvano De Franceschi. “Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires.” <i>Nano Letters</i>. American Chemical Society, 2012. <a href=\"https://doi.org/10.1021/nl300930m\">https://doi.org/10.1021/nl300930m</a>.","short":"M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, S. De Franceschi, Nano Letters 12 (2012) 3074–3079.","ista":"Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. 2012. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 12(6), 3074–3079.","mla":"Mongillo, Massimo, et al. “Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires.” <i>Nano Letters</i>, vol. 12, no. 6, American Chemical Society, 2012, pp. 3074–79, doi:<a href=\"https://doi.org/10.1021/nl300930m\">10.1021/nl300930m</a>.","apa":"Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., &#38; De Franceschi, S. (2012). Multifunctional devices and logic gates with undoped silicon nanowires. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/nl300930m\">https://doi.org/10.1021/nl300930m</a>"},"date_updated":"2021-01-12T06:53:00Z","date_created":"2018-12-11T11:53:50Z","intvolume":"        12","year":"2012","volume":12,"oa":1,"title":"Multifunctional devices and logic gates with undoped silicon nanowires","issue":"6","page":"3074 - 3079","acknowledgement":"This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513","day":"13","main_file_link":[{"url":"http://arxiv.org/abs/1208.1465","open_access":"1"}],"publisher":"American Chemical Society","author":[{"first_name":"Massimo","last_name":"Mongillo","full_name":"Mongillo, Massimo"},{"last_name":"Spathis","full_name":"Spathis, Panayotis N","first_name":"Panayotis"},{"last_name":"Katsaros","full_name":"Georgios Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Gentile","full_name":"Gentile, Pascal","first_name":"Pascal"},{"full_name":"De Franceschi, Silvano","last_name":"De Franceschi","first_name":"Silvano"}],"publication":"Nano Letters","type":"journal_article","extern":1,"status":"public","abstract":[{"text":"We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one.","lang":"eng"}],"_id":"1756"}