{"title":"Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping","quality_controlled":0,"doi":"10.1063/1.2405876","author":[{"first_name":"Georgios","full_name":"Georgios Katsaros","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Armando","full_name":"Rastelli, Armando","last_name":"Rastelli"},{"last_name":"Stoffel","first_name":"Mathieu","full_name":"Stoffel, Mathieu"},{"full_name":"Costantini, Giovanni","first_name":"Giovanni","last_name":"Costantini"},{"last_name":"Schmidt","full_name":"Schmidt, Oliver G","first_name":"Oliver"},{"last_name":"Kern","full_name":"Kern, Klaus","first_name":"Klaus"},{"last_name":"Tersoff","first_name":"Jerry","full_name":"Tersoff, Jerry"},{"first_name":"Elisabeth","full_name":"Müller, Elisabeth","last_name":"Müller"},{"full_name":"Von Känel, Hans","first_name":"Hans","last_name":"Von Känel"}],"_id":"1748","abstract":[{"lang":"eng","text":"The authors apply selective wet chemical etching and atomic force microscopy to reveal the three-dimensional shape of SiGeSi (001) islands after capping with Si. Although the &quot;self-assembled quantum dots&quot; remain practically unaffected by capping in the temperature range of 300-450 °C, significant morphological changes take place on the Si surface. At 450 °C, the morphology of the capping layer (Si matrix) evolves toward an intriguing semifacetted structure, which we call a &quot;ziggurat,&quot; giving the misleading impression of a stepped SiGe island shape."}],"publication":"Applied Physics Letters","publication_status":"published","issue":"25","type":"journal_article","extern":1,"volume":89,"publist_id":"5376","date_updated":"2021-01-12T06:52:57Z","intvolume":"        89","day":"01","status":"public","year":"2006","publisher":"American Institute of Physics","date_published":"2006-01-01T00:00:00Z","date_created":"2018-12-11T11:53:48Z","month":"01","citation":{"ista":"Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 89(25).","chicago":"Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini, Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” <i>Applied Physics Letters</i>. American Institute of Physics, 2006. <a href=\"https://doi.org/10.1063/1.2405876\">https://doi.org/10.1063/1.2405876</a>.","apa":"Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern, K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. <i>Applied Physics Letters</i>. American Institute of Physics. <a href=\"https://doi.org/10.1063/1.2405876\">https://doi.org/10.1063/1.2405876</a>","short":"G. Katsaros, A. Rastelli, M. Stoffel, G. Costantini, O. Schmidt, K. Kern, J. Tersoff, E. Müller, H. Von Känel, Applied Physics Letters 89 (2006).","mla":"Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” <i>Applied Physics Letters</i>, vol. 89, no. 25, American Institute of Physics, 2006, doi:<a href=\"https://doi.org/10.1063/1.2405876\">10.1063/1.2405876</a>.","ama":"Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. <i>Applied Physics Letters</i>. 2006;89(25). doi:<a href=\"https://doi.org/10.1063/1.2405876\">10.1063/1.2405876</a>","ieee":"G. Katsaros <i>et al.</i>, “Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping,” <i>Applied Physics Letters</i>, vol. 89, no. 25. American Institute of Physics, 2006."}}