{"day":"15","page":"2608 - 2613","status":"public","year":"2006","publisher":"Elsevier","date_published":"2006-06-15T00:00:00Z","date_created":"2018-12-11T11:53:47Z","month":"06","citation":{"ama":"Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. <i>Surface Science</i>. 2006;600(12):2608-2613. doi:<a href=\"https://doi.org/10.1016/j.susc.2006.04.027\">10.1016/j.susc.2006.04.027</a>","mla":"Katsaros, Georgios, et al. “Investigating the Lateral Motion of SiGe Islands by Selective Chemical Etching.” <i>Surface Science</i>, vol. 600, no. 12, Elsevier, 2006, pp. 2608–13, doi:<a href=\"https://doi.org/10.1016/j.susc.2006.04.027\">10.1016/j.susc.2006.04.027</a>.","short":"G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. Von Känel, A. Bittner, J. Tersoff, U. Denker, O. Schmidt, G. Costantini, K. Kern, Surface Science 600 (2006) 2608–2613.","ieee":"G. Katsaros <i>et al.</i>, “Investigating the lateral motion of SiGe islands by selective chemical etching,” <i>Surface Science</i>, vol. 600, no. 12. Elsevier, pp. 2608–2613, 2006.","ista":"Katsaros G, Rastelli A, Stoffel M, Isella G, Von Känel H, Bittner A, Tersoff J, Denker U, Schmidt O, Costantini G, Kern K. 2006. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 600(12), 2608–2613.","chicago":"Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Isella, Hans Von Känel, Alexander Bittner, Jerry Tersoff, et al. “Investigating the Lateral Motion of SiGe Islands by Selective Chemical Etching.” <i>Surface Science</i>. Elsevier, 2006. <a href=\"https://doi.org/10.1016/j.susc.2006.04.027\">https://doi.org/10.1016/j.susc.2006.04.027</a>.","apa":"Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., Von Känel, H., Bittner, A., … Kern, K. (2006). Investigating the lateral motion of SiGe islands by selective chemical etching. <i>Surface Science</i>. Elsevier. <a href=\"https://doi.org/10.1016/j.susc.2006.04.027\">https://doi.org/10.1016/j.susc.2006.04.027</a>"},"title":"Investigating the lateral motion of SiGe islands by selective chemical etching","quality_controlled":0,"doi":"10.1016/j.susc.2006.04.027","author":[{"first_name":"Georgios","full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros"},{"last_name":"Rastelli","full_name":"Rastelli, Armando","first_name":"Armando"},{"full_name":"Stoffel, Mathieu","first_name":"Mathieu","last_name":"Stoffel"},{"last_name":"Isella","full_name":"Isella, Giovanni","first_name":"Giovanni"},{"full_name":"Von Känel, Hans","first_name":"Hans","last_name":"Von Känel"},{"last_name":"Bittner","full_name":"Bittner, Alexander M","first_name":"Alexander"},{"full_name":"Tersoff, Jerry","first_name":"Jerry","last_name":"Tersoff"},{"last_name":"Denker","full_name":"Denker, Ulrich","first_name":"Ulrich"},{"last_name":"Schmidt","full_name":"Schmidt, Oliver G","first_name":"Oliver"},{"first_name":"Giovanni","full_name":"Costantini, Giovanni","last_name":"Costantini"},{"full_name":"Kern, Klaus","first_name":"Klaus","last_name":"Kern"}],"_id":"1745","abstract":[{"lang":"eng","text":"SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing."}],"issue":"12","publication_status":"published","publication":"Surface Science","type":"journal_article","extern":1,"volume":600,"date_updated":"2021-01-12T06:52:56Z","publist_id":"5379","intvolume":"       600"}