{"article_type":"original","year":"2012","publisher":"Springer Nature","day":"01","date_published":"2012-08-01T00:00:00Z","intvolume":"        47","language":[{"iso":"eng"}],"title":"Thermoelectric properties of Ho-doped Bi0.88Sb0.12","quality_controlled":"1","scopus_import":"1","issue":"15","oa_version":"Preprint","article_processing_charge":"No","citation":{"chicago":"Lukas, K. C., G. Joshi, Kimberly A Modic, Z. F. Ren, and C. P. Opeil. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>. Springer Nature, 2012. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>.","ista":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. 2012. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. Journal of Materials Science. 47(15), 5729–5734.","apa":"Lukas, K. C., Joshi, G., Modic, K. A., Ren, Z. F., &#38; Opeil, C. P. (2012). Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. Springer Nature. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>","short":"K.C. Lukas, G. Joshi, K.A. Modic, Z.F. Ren, C.P. Opeil, Journal of Materials Science 47 (2012) 5729–5734.","ama":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. 2012;47(15):5729-5734. doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>","mla":"Lukas, K. C., et al. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>, vol. 47, no. 15, Springer Nature, 2012, pp. 5729–34, doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>.","ieee":"K. C. Lukas, G. Joshi, K. A. Modic, Z. F. Ren, and C. P. Opeil, “Thermoelectric properties of Ho-doped Bi0.88Sb0.12,” <i>Journal of Materials Science</i>, vol. 47, no. 15. Springer Nature, pp. 5729–5734, 2012."},"date_created":"2022-08-08T08:28:20Z","month":"08","page":"5729-5734","status":"public","external_id":{"arxiv":["1201.6304"]},"user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","volume":47,"date_updated":"2022-08-11T09:34:39Z","type":"journal_article","extern":"1","publication_identifier":{"issn":["0022-2461"],"eissn":["1573-4803"]},"author":[{"full_name":"Lukas, K. C.","first_name":"K. C.","last_name":"Lukas"},{"first_name":"G.","full_name":"Joshi, G.","last_name":"Joshi"},{"id":"13C26AC0-EB69-11E9-87C6-5F3BE6697425","last_name":"Modic","orcid":"0000-0001-9760-3147","full_name":"Modic, Kimberly A","first_name":"Kimberly A"},{"last_name":"Ren","first_name":"Z. F.","full_name":"Ren, Z. F."},{"last_name":"Opeil","full_name":"Opeil, C. P.","first_name":"C. P."}],"doi":"10.1007/s10853-012-6463-6","_id":"11751","publication":"Journal of Materials Science","publication_status":"published","abstract":[{"lang":"eng","text":"The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K."}]}