{"title":"Unidentified major p-type source in SnSe: Multivacancies","quality_controlled":"1","status":"public","publisher":"Springer Nature","scopus_import":"1","oa_version":"Published Version","oa":1,"date_created":"2022-05-22T22:01:40Z","user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","department":[{"_id":"MaIb"}],"abstract":[{"lang":"eng","text":"Tin selenide (SnSe) is considered a robust candidate for thermoelectric applications due to its very high thermoelectric figure of merit, ZT, with values of 2.6 in p-type and 2.8 in n-type single crystals. Sn has been replaced with various lower group dopants to achieve successful p-type doping in SnSe with high ZT values. A known, facile, and powerful alternative way to introduce a hole carrier is to use a natural single Sn vacancy, VSn. Through transport and scanning tunneling microscopy studies, we discovered that VSn are dominant in high-quality (slow cooling rate) SnSe single crystals, while multiple vacancies, Vmulti, are dominant in low-quality (high cooling rate) single crystals. Surprisingly, both VSn and Vmulti help to increase the power factors of SnSe, whereas samples with dominant VSn have superior thermoelectric properties in SnSe single crystals. Additionally, the observation that Vmulti are good p-type sources observed in relatively low-quality single crystals is useful in thermoelectric applications because polycrystalline SnSe can be used due to its mechanical strength; this substance is usually fabricated at very high cooling speeds."}],"publication_status":"published","date_published":"2022-05-13T00:00:00Z","month":"05","article_processing_charge":"No","date_updated":"2023-08-03T07:13:58Z","tmp":{"image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode"},"type":"journal_article","file":[{"checksum":"0579997cc1d28bf66e29357e08e3e39d","relation":"main_file","content_type":"application/pdf","access_level":"open_access","creator":"dernst","file_name":"2022_NPGAsiaMaterials_Nguyen.pdf","date_updated":"2022-05-23T06:47:57Z","success":1,"file_id":"11404","date_created":"2022-05-23T06:47:57Z","file_size":6202545}],"day":"13","ddc":["540"],"file_date_updated":"2022-05-23T06:47:57Z","acknowledgement":"This work was supported by the National Research Foundation of Korea [NRF-2019R1F1A1058473, NRF-2019R1A6A1A11053838, and NRF-2020K1A4A7A02095438].","isi":1,"year":"2022","intvolume":" 14","volume":14,"_id":"11401","article_number":"42","language":[{"iso":"eng"}],"citation":{"short":"V.Q. Nguyen, T.L. Trinh, C. Chang, L.D. Zhao, T.H. Nguyen, V.T. Duong, A.T. Duong, J.H. Park, S. Park, J. Kim, S. Cho, NPG Asia Materials 14 (2022).","ama":"Nguyen VQ, Trinh TL, Chang C, et al. Unidentified major p-type source in SnSe: Multivacancies. NPG Asia Materials. 2022;14. doi:10.1038/s41427-022-00393-5","chicago":"Nguyen, Van Quang, Thi Ly Trinh, Cheng Chang, Li Dong Zhao, Thi Huong Nguyen, Van Thiet Duong, Anh Tuan Duong, et al. “Unidentified Major P-Type Source in SnSe: Multivacancies.” NPG Asia Materials. Springer Nature, 2022. https://doi.org/10.1038/s41427-022-00393-5.","ista":"Nguyen VQ, Trinh TL, Chang C, Zhao LD, Nguyen TH, Duong VT, Duong AT, Park JH, Park S, Kim J, Cho S. 2022. Unidentified major p-type source in SnSe: Multivacancies. NPG Asia Materials. 14, 42.","apa":"Nguyen, V. Q., Trinh, T. L., Chang, C., Zhao, L. D., Nguyen, T. H., Duong, V. T., … Cho, S. (2022). Unidentified major p-type source in SnSe: Multivacancies. NPG Asia Materials. Springer Nature. https://doi.org/10.1038/s41427-022-00393-5","ieee":"V. Q. Nguyen et al., “Unidentified major p-type source in SnSe: Multivacancies,” NPG Asia Materials, vol. 14. Springer Nature, 2022.","mla":"Nguyen, Van Quang, et al. “Unidentified Major P-Type Source in SnSe: Multivacancies.” NPG Asia Materials, vol. 14, 42, Springer Nature, 2022, doi:10.1038/s41427-022-00393-5."},"article_type":"original","external_id":{"isi":["000794880200001"]},"publication_identifier":{"eissn":["1884-4057"],"issn":["1884-4049"]},"author":[{"last_name":"Nguyen","first_name":"Van Quang","full_name":"Nguyen, Van Quang"},{"first_name":"Thi Ly","last_name":"Trinh","full_name":"Trinh, Thi Ly"},{"id":"9E331C2E-9F27-11E9-AE48-5033E6697425","full_name":"Chang, Cheng","last_name":"Chang","first_name":"Cheng","orcid":"0000-0002-9515-4277"},{"first_name":"Li Dong","last_name":"Zhao","full_name":"Zhao, Li Dong"},{"first_name":"Thi Huong","last_name":"Nguyen","full_name":"Nguyen, Thi Huong"},{"last_name":"Duong","first_name":"Van Thiet","full_name":"Duong, Van Thiet"},{"last_name":"Duong","first_name":"Anh Tuan","full_name":"Duong, Anh Tuan"},{"full_name":"Park, Jong Ho","last_name":"Park","first_name":"Jong Ho"},{"first_name":"Sudong","last_name":"Park","full_name":"Park, Sudong"},{"full_name":"Kim, Jungdae","last_name":"Kim","first_name":"Jungdae"},{"full_name":"Cho, Sunglae","last_name":"Cho","first_name":"Sunglae"}],"has_accepted_license":"1","publication":"NPG Asia Materials","doi":"10.1038/s41427-022-00393-5"}