{"acknowledgement":"I would like to thank the MURI program, Sloan foundation, AFOSR, and ARO for their generous support of this work.","date_created":"2022-01-28T10:28:35Z","date_published":"2020-03-01T00:00:00Z","title":"Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport","citation":{"short":"Y. Zhang, M. Serlin, C. Tschirhart, H. Polshyn, J. Zhu, L. Balents, M.E. Huber, T. Taniguchi, K. Watanabe, A. Young, in:, APS March Meeting 2020, American Physical Society, 2020.","chicago":"Zhang, Yuxuan, Marec Serlin, Charles Tschirhart, Hryhoriy Polshyn, Jiacheng Zhu, Leon Balents, Martin E. Huber, Takashi Taniguchi, Kenji Watanabe, and Andrea Young. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure, Part I: Device Fabrication and Transport.” In <i>APS March Meeting 2020</i>, Vol. 65. American Physical Society, 2020.","ama":"Zhang Y, Serlin M, Tschirhart C, et al. Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. In: <i>APS March Meeting 2020</i>. Vol 65. American Physical Society; 2020.","ieee":"Y. Zhang <i>et al.</i>, “Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport,” in <i>APS March Meeting 2020</i>, Denver, CO, United States, 2020, vol. 65, no. 1.","ista":"Zhang Y, Serlin M, Tschirhart C, Polshyn H, Zhu J, Balents L, Huber ME, Taniguchi T, Watanabe K, Young A. 2020. Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. APS March Meeting 2020. APS: American Physical Society, Bulletin of the American Physical Society, vol. 65, B59.00012.","mla":"Zhang, Yuxuan, et al. “Intrinsic Quantized Anomalous Hall Effect in a Moiré Heterostructure, Part I: Device Fabrication and Transport.” <i>APS March Meeting 2020</i>, vol. 65, no. 1, B59.00012, American Physical Society, 2020.","apa":"Zhang, Y., Serlin, M., Tschirhart, C., Polshyn, H., Zhu, J., Balents, L., … Young, A. (2020). Intrinsic quantized anomalous Hall effect in a moiré heterostructure, part I: Device fabrication and transport. In <i>APS March Meeting 2020</i> (Vol. 65). Denver, CO, United States: American Physical Society."},"author":[{"full_name":"Zhang, Yuxuan","last_name":"Zhang","first_name":"Yuxuan"},{"full_name":"Serlin, Marec","last_name":"Serlin","first_name":"Marec"},{"full_name":"Tschirhart, Charles","first_name":"Charles","last_name":"Tschirhart"},{"full_name":"Polshyn, Hryhoriy","last_name":"Polshyn","first_name":"Hryhoriy","id":"edfc7cb1-526e-11ec-b05a-e6ecc27e4e48","orcid":"0000-0001-8223-8896"},{"full_name":"Zhu, Jiacheng","last_name":"Zhu","first_name":"Jiacheng"},{"first_name":"Leon","last_name":"Balents","full_name":"Balents, Leon"},{"first_name":"Martin E.","last_name":"Huber","full_name":"Huber, Martin E."},{"full_name":"Taniguchi, Takashi","last_name":"Taniguchi","first_name":"Takashi"},{"first_name":"Kenji","last_name":"Watanabe","full_name":"Watanabe, Kenji"},{"first_name":"Andrea","last_name":"Young","full_name":"Young, Andrea"}],"month":"03","article_number":"B59.00012","related_material":{"record":[{"id":"10619","status":"public","relation":"other"}]},"volume":65,"quality_controlled":"1","publication_status":"published","_id":"10697","status":"public","article_processing_charge":"No","alternative_title":["Bulletin of the American Physical Society"],"type":"conference","issue":"1","oa_version":"Published Version","oa":1,"external_id":{"arxiv":["1907.00261"]},"user_id":"8b945eb4-e2f2-11eb-945a-df72226e66a9","abstract":[{"lang":"eng","text":"We report the observation of a quantized anomalous Hall effect in a moiré heterostructure consisting of twisted bilayer graphene aligned to an encapsulating hBN substrate. The effect occurs at a density of 3 electrons per superlattice unit cell, where we observe magnetic hysteresis and a Hall resistance quantized to within 0.1% of the resistance quantum at temperatures as high as 3K. In this first of 3 talks, I will describe the fabrication procedure for our device as well as basic transport characterization measurements. I will introduce the phenomenology of twisted bilayer graphene and present evidence for hBN alignment as manifested in the hierarchy of symmetry-breaking gaps and anomalous magnetoresistance."}],"publisher":"American Physical Society","intvolume":"        65","main_file_link":[{"open_access":"1","url":"https://meetings.aps.org/Meeting/MAR20/Session/B59.12"}],"language":[{"iso":"eng"}],"year":"2020","extern":"1","day":"01","date_updated":"2023-02-21T15:57:52Z","publication":"APS March Meeting 2020","conference":{"name":"APS: American Physical Society","location":"Denver, CO, United States","start_date":"2020-03-02","end_date":"2020-03-06"}}