{"keyword":["general physics and astronomy"],"article_type":"original","publisher":"American Physical Society","year":"2018","day":"28","date_published":"2018-11-28T00:00:00Z","intvolume":"       121","language":[{"iso":"eng"}],"main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1805.04199"}],"title":"Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices","quality_controlled":"1","scopus_import":"1","issue":"22","oa_version":"Preprint","article_processing_charge":"No","acknowledgement":"We thank Cory Dean, S. Chen, Y. Zeng, M. Yankowitz, and J. Li for discussing their unpublished data and for sharing the stack inversion technique. The authors acknowledge further discussions of the results with I. Sodemann, M. Zaletel, C. Nayak, and J. Jain. A. F. Y., H. P., H. Z., and E. M. S. were supported by the ARO under awards 69188PHH and MURI W911NF-17-1-0323. A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by National Science Foundation Cooperative Agreement No. DMR-1644779 and the State of Florida. K. W. and T. T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, and JSPS KAKENHI Grant No. JP15K21722. E. M. S. acknowledges the support of the Elings Prize Fellowship in Science of the California Nanosystems Institute at the University of California, Santa Barbara. A. F. Y. acknowledges the support of the David and Lucile Packard Foundation.","citation":{"ieee":"H. Polshyn, H. Zhou, E. M. Spanton, T. Taniguchi, K. Watanabe, and A. F. Young, “Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices,” <i>Physical Review Letters</i>, vol. 121, no. 22. American Physical Society, 2018.","short":"H. Polshyn, H. Zhou, E.M. Spanton, T. Taniguchi, K. Watanabe, A.F. Young, Physical Review Letters 121 (2018).","mla":"Polshyn, Hryhoriy, et al. “Quantitative Transport Measurements of Fractional Quantum Hall Energy Gaps in Edgeless Graphene Devices.” <i>Physical Review Letters</i>, vol. 121, no. 22, 226801, American Physical Society, 2018, doi:<a href=\"https://doi.org/10.1103/physrevlett.121.226801\">10.1103/physrevlett.121.226801</a>.","ama":"Polshyn H, Zhou H, Spanton EM, Taniguchi T, Watanabe K, Young AF. Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices. <i>Physical Review Letters</i>. 2018;121(22). doi:<a href=\"https://doi.org/10.1103/physrevlett.121.226801\">10.1103/physrevlett.121.226801</a>","apa":"Polshyn, H., Zhou, H., Spanton, E. M., Taniguchi, T., Watanabe, K., &#38; Young, A. F. (2018). Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices. <i>Physical Review Letters</i>. American Physical Society. <a href=\"https://doi.org/10.1103/physrevlett.121.226801\">https://doi.org/10.1103/physrevlett.121.226801</a>","chicago":"Polshyn, Hryhoriy, H. Zhou, E. M. Spanton, T. Taniguchi, K. Watanabe, and A. F. Young. “Quantitative Transport Measurements of Fractional Quantum Hall Energy Gaps in Edgeless Graphene Devices.” <i>Physical Review Letters</i>. American Physical Society, 2018. <a href=\"https://doi.org/10.1103/physrevlett.121.226801\">https://doi.org/10.1103/physrevlett.121.226801</a>.","ista":"Polshyn H, Zhou H, Spanton EM, Taniguchi T, Watanabe K, Young AF. 2018. Quantitative transport measurements of fractional quantum Hall energy gaps in edgeless graphene devices. Physical Review Letters. 121(22), 226801."},"date_created":"2022-01-14T12:15:47Z","month":"11","status":"public","external_id":{"arxiv":["1805.04199"]},"user_id":"8b945eb4-e2f2-11eb-945a-df72226e66a9","oa":1,"volume":121,"date_updated":"2022-01-14T13:48:35Z","type":"journal_article","extern":"1","publication_identifier":{"issn":["0031-9007"],"eissn":["1079-7114"]},"doi":"10.1103/physrevlett.121.226801","author":[{"last_name":"Polshyn","id":"edfc7cb1-526e-11ec-b05a-e6ecc27e4e48","full_name":"Polshyn, Hryhoriy","first_name":"Hryhoriy","orcid":"0000-0001-8223-8896"},{"first_name":"H.","full_name":"Zhou, H.","last_name":"Zhou"},{"full_name":"Spanton, E. M.","first_name":"E. M.","last_name":"Spanton"},{"first_name":"T.","full_name":"Taniguchi, T.","last_name":"Taniguchi"},{"full_name":"Watanabe, K.","first_name":"K.","last_name":"Watanabe"},{"last_name":"Young","first_name":"A. F.","full_name":"Young, A. F."}],"_id":"10626","publication_status":"published","publication":"Physical Review Letters","abstract":[{"lang":"eng","text":"Owing to their wide tunability, multiple internal degrees of freedom, and low disorder, graphene heterostructures are emerging as a promising experimental platform for fractional quantum Hall (FQH) studies. Here, we report FQH thermal activation gap measurements in dual graphite-gated monolayer graphene devices fabricated in an edgeless Corbino geometry. In devices with substrate-induced sublattice splitting, we find a tunable crossover between single- and multicomponent FQH states in the zero energy Landau level. Activation gaps in the single-component regime show excellent agreement with numerical calculations using a single broadening parameter \r\nΓ≈7.2K. In the first excited Landau level, in contrast, FQH gaps are strongly influenced by Landau level mixing, and we observe an unexpected valley-ordered state at integer filling ν=−4."}],"article_number":"226801"}