@article{8957,
  abstract     = {Global tissue tension anisotropy has been shown to trigger stereotypical cell division orientation by elongating mitotic cells along the main tension axis. Yet, how tissue tension elongates mitotic cells despite those cells undergoing mitotic rounding (MR) by globally upregulating cortical actomyosin tension remains unclear. We addressed this question by taking advantage of ascidian embryos, consisting of a small number of interphasic and mitotic blastomeres and displaying an invariant division pattern. We found that blastomeres undergo MR by locally relaxing cortical tension at their apex, thereby allowing extrinsic pulling forces from neighboring interphasic blastomeres to polarize their shape and thus division orientation. Consistently, interfering with extrinsic forces by reducing the contractility of interphasic blastomeres or disrupting the establishment of asynchronous mitotic domains leads to aberrant mitotic cell division orientations. Thus, apical relaxation during MR constitutes a key mechanism by which tissue tension anisotropy controls stereotypical cell division orientation.},
  author       = {Godard, Benoit G and Dumollard, Rémi and Munro, Edwin and Chenevert, Janet and Hebras, Céline and Mcdougall, Alex and Heisenberg, Carl-Philipp J},
  issn         = {18781551},
  journal      = {Developmental Cell},
  number       = {6},
  pages        = {695--706},
  publisher    = {Elsevier},
  title        = {{Apical relaxation during mitotic rounding promotes tension-oriented cell division}},
  doi          = {10.1016/j.devcel.2020.10.016},
  volume       = {55},
  year         = {2020},
}

@article{7541,
  abstract     = {Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.},
  author       = {Gao, Fei and Wang, Jian-Huan and Watzinger, Hannes and Hu, Hao and Rančić, Marko J. and Zhang, Jie-Yin and Wang, Ting and Yao, Yuan and Wang, Gui-Lei and Kukucka, Josip and Vukušić, Lada and Kloeffel, Christoph and Loss, Daniel and Liu, Feng and Katsaros, Georgios and Zhang, Jian-Jun},
  issn         = {0935-9648},
  journal      = {Advanced Materials},
  number       = {16},
  publisher    = {Wiley},
  title        = {{Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling}},
  doi          = {10.1002/adma.201906523},
  volume       = {32},
  year         = {2020},
}

@article{6609,
  abstract     = {Mechanical systems facilitate the development of a hybrid quantum technology comprising electrical, optical, atomic and acoustic degrees of freedom1, and entanglement is essential to realize quantum-enabled devices. Continuous-variable entangled fields—known as Einstein–Podolsky–Rosen (EPR) states—are spatially separated two-mode squeezed states that can be used for quantum teleportation and quantum communication2. In the optical domain, EPR states are typically generated using nondegenerate optical amplifiers3, and at microwave frequencies Josephson circuits can serve as a nonlinear medium4,5,6. An outstanding goal is to deterministically generate and distribute entangled states with a mechanical oscillator, which requires a carefully arranged balance between excitation, cooling and dissipation in an ultralow noise environment. Here we observe stationary emission of path-entangled microwave radiation from a parametrically driven 30-micrometre-long silicon nanostring oscillator, squeezing the joint field operators of two thermal modes by 3.40 decibels below the vacuum level. The motion of this micromechanical system correlates up to 50 photons per second per hertz, giving rise to a quantum discord that is robust with respect to microwave noise7. Such generalized quantum correlations of separable states are important for quantum-enhanced detection8 and provide direct evidence of the non-classical nature of the mechanical oscillator without directly measuring its state9. This noninvasive measurement scheme allows to infer information about otherwise inaccessible objects, with potential implications for sensing, open-system dynamics and fundamental tests of quantum gravity. In the future, similar on-chip devices could be used to entangle subsystems on very different energy scales, such as microwave and optical photons.},
  author       = {Barzanjeh, Shabir and Redchenko, Elena and Peruzzo, Matilda and Wulf, Matthias and Lewis, Dylan and Arnold, Georg M and Fink, Johannes M},
  journal      = {Nature},
  pages        = {480--483},
  publisher    = {Nature Publishing Group},
  title        = {{Stationary entangled radiation from micromechanical motion}},
  doi          = {10.1038/s41586-019-1320-2},
  volume       = {570},
  year         = {2019},
}

@unpublished{10065,
  abstract     = {We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.},
  author       = {Hofmann, Andrea C and Jirovec, Daniel and Borovkov, Maxim and Prieto Gonzalez, Ivan and Ballabio, Andrea and Frigerio, Jacopo and Chrastina, Daniel and Isella, Giovanni and Katsaros, Georgios},
  booktitle    = {arXiv},
  title        = {{Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits}},
  doi          = {10.48550/arXiv.1910.05841},
  year         = {2019},
}

@phdthesis{323,
  abstract     = {In the here presented thesis, we explore the role of branched actin networks in cell migration and antigen presentation, the two most relevant processes in dendritic cell biology. Branched actin networks construct lamellipodial protrusions at the leading edge of migrating cells. These are typically seen as adhesive structures, which mediate force transduction to the extracellular matrix that leads to forward locomotion. We ablated Arp2/3 nucleation promoting factor WAVE in DCs and found that the resulting cells lack lamellipodial protrusions. Instead, depending on the maturation state, one or multiple filopodia were formed. By challenging these cells in a variety of migration assays we found that lamellipodial protrusions are dispensable for the locomotion of leukocytes and actually dampen the speed of migration. However, lamellipodia are critically required to negotiate complex environments that DCs experience while they travel to the next draining lymph node. Taken together our results suggest that leukocyte lamellipodia have rather a sensory- than a force transducing function. Furthermore, we show for the first time structure and dynamics of dendritic cell F-actin at the immunological synapse with naïve T cells. Dendritic cell F-actin appears as dynamic foci that are nucleated by the Arp2/3 complex. WAVE ablated dendritic cells show increased membrane tension, leading to an altered ultrastructure of the immunological synapse and severe T cell priming defects. These results point towards a previously unappreciated role of the cellular mechanics of dendritic cells in T cell activation. Additionally, we present a novel cell culture based system for the differentiation of dendritic cells from conditionally immortalized hematopoietic precursors. These precursor cells are genetically tractable via the CRISPR/Cas9 system while they retain their ability to differentiate into highly migratory dendritic cells and other immune cells. This will foster the study of all aspects of dendritic cell biology and beyond. },
  author       = {Leithner, Alexander F},
  issn         = {2663-337X},
  pages        = {99},
  publisher    = {Institute of Science and Technology Austria},
  title        = {{Branched actin networks in dendritic cell biology}},
  doi          = {10.15479/AT:ISTA:th_998},
  year         = {2018},
}

@article{23,
  abstract     = {The strong atomistic spin–orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT are reported, with a total readout visibility of about 70%. By analyzing separately the spin-to-charge conversion and charge readout fidelities, we have obtained insight into the processes limiting the visibilities of hole spins. The analyses suggest that high hole visibilities are feasible at realistic experimental conditions, underlying the potential of hole spins for the realization of viable qubit devices.},
  author       = {Vukušić, Lada and Kukucka, Josip and Watzinger, Hannes and Milem, Joshua M and Schäffler, Friedrich and Katsaros, Georgios},
  issn         = {15306984},
  journal      = {Nano Letters},
  number       = {11},
  pages        = {7141 -- 7145},
  publisher    = {American Chemical Society},
  title        = {{Single-shot readout of hole spins in Ge}},
  doi          = {10.1021/acs.nanolett.8b03217},
  volume       = {18},
  year         = {2018},
}

@article{77,
  abstract     = {Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices.},
  author       = {Watzinger, Hannes and Kukucka, Josip and Vukusic, Lada and Gao, Fei and Wang, Ting and Schäffler, Friedrich and Zhang, Jian and Katsaros, Georgios},
  journal      = {Nature Communications},
  number       = {3902 },
  publisher    = {Nature Publishing Group},
  title        = {{A germanium hole spin qubit}},
  doi          = {10.1038/s41467-018-06418-4},
  volume       = {9},
  year         = {2018},
}