@article{10858, abstract = {The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi2Se3 is an obvious possible Te-free alternative to Bi2Te3 for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi2Se3 nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi2Se3 Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi2Se3.}, author = {Li, Mengyao and Zhang, Yu and Zhang, Ting and Zuo, Yong and Xiao, Ke and Arbiol, Jordi and Llorca, Jordi and Liu, Yu and Cabot, Andreu}, issn = {2079-4991}, journal = {Nanomaterials}, keywords = {General Materials Science, General Chemical Engineering}, number = {7}, publisher = {MDPI}, title = {{Enhanced thermoelectric performance of n-type Bi2Se3 nanosheets through Sn doping}}, doi = {10.3390/nano11071827}, volume = {11}, year = {2021}, } @article{14800, abstract = {Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field. }, author = {Chang, Cheng and Chen, Wei and Chen, Ye and Chen, Yonghua and Chen, Yu and Ding, Feng and Fan, Chunhai and Fan, Hong Jin and Fan, Zhanxi and Gong, Cheng and Gong, Yongji and He, Qiyuan and Hong, Xun and Hu, Sheng and Hu, Weida and Huang, Wei and Huang, Yuan and Ji, Wei and Li, Dehui and Li, Lain Jong and Li, Qiang and Lin, Li and Ling, Chongyi and Liu, Minghua and Liu, Nan and Liu, Zhuang and Loh, Kian Ping and Ma, Jianmin and Miao, Feng and Peng, Hailin and Shao, Mingfei and Song, Li and Su, Shao and Sun, Shuo and Tan, Chaoliang and Tang, Zhiyong and Wang, Dingsheng and Wang, Huan and Wang, Jinlan and Wang, Xin and Wang, Xinran and Wee, Andrew T.S. and Wei, Zhongming and Wu, Yuen and Wu, Zhong Shuai and Xiong, Jie and Xiong, Qihua and Xu, Weigao and Yin, Peng and Zeng, Haibo and Zeng, Zhiyuan and Zhai, Tianyou and Zhang, Han and Zhang, Hui and Zhang, Qichun and Zhang, Tierui and Zhang, Xiang and Zhao, Li Dong and Zhao, Meiting and Zhao, Weijie and Zhao, Yunxuan and Zhou, Kai Ge and Zhou, Xing and Zhou, Yu and Zhu, Hongwei and Zhang, Hua and Liu, Zhongfan}, issn = {1001-4861}, journal = {Acta Physico-Chimica Sinica}, number = {12}, publisher = {Peking University}, title = {{Recent progress on two-dimensional materials}}, doi = {10.3866/PKU.WHXB202108017}, volume = {37}, year = {2021}, } @article{9118, abstract = {Cesium lead halides have intrinsically unstable crystal lattices and easily transform within perovskite and nonperovskite structures. In this work, we explore the conversion of the perovskite CsPbBr3 into Cs4PbBr6 in the presence of PbS at 450 °C to produce doped nanocrystal-based composites with embedded Cs4PbBr6 nanoprecipitates. We show that PbBr2 is extracted from CsPbBr3 and diffuses into the PbS lattice with a consequent increase in the concentration of free charge carriers. This new doping strategy enables the adjustment of the density of charge carriers between 1019 and 1020 cm–3, and it may serve as a general strategy for doping other nanocrystal-based semiconductors.}, author = {Calcabrini, Mariano and Genc, Aziz and Liu, Yu and Kleinhanns, Tobias and Lee, Seungho and Dirin, Dmitry N. and Akkerman, Quinten A. and Kovalenko, Maksym V. and Arbiol, Jordi and Ibáñez, Maria}, issn = {2380-8195}, journal = {ACS Energy Letters}, number = {2}, pages = {581--587}, publisher = {American Chemical Society}, title = {{Exploiting the lability of metal halide perovskites for doping semiconductor nanocomposites}}, doi = {10.1021/acsenergylett.0c02448}, volume = {6}, year = {2021}, } @article{9206, abstract = {The precise engineering of thermoelectric materials using nanocrystals as their building blocks has proven to be an excellent strategy to increase energy conversion efficiency. Here we present a synthetic route to produce Sb-doped PbS colloidal nanoparticles. These nanoparticles are then consolidated into nanocrystalline PbS:Sb using spark plasma sintering. We demonstrate that the introduction of Sb significantly influences the size, geometry, crystal lattice and especially the carrier concentration of PbS. The increase of charge carrier concentration achieved with the introduction of Sb translates into an increase of the electrical and thermal conductivities and a decrease of the Seebeck coefficient. Overall, PbS:Sb nanomaterial were characterized by two-fold higher thermoelectric figures of merit than undoped PbS. }, author = {Cadavid, Doris and Wei, Kaya and Liu, Yu and Zhang, Yu and Li, Mengyao and Genç, Aziz and Berestok, Taisiia and Ibáñez, Maria and Shavel, Alexey and Nolas, George S. and Cabot, Andreu}, issn = {1996-1944}, journal = {Materials}, number = {4}, publisher = {MDPI}, title = {{Synthesis, bottom up assembly and thermoelectric properties of Sb-doped PbS nanocrystal building blocks}}, doi = {10.3390/ma14040853}, volume = {14}, year = {2021}, } @article{9235, abstract = {Cu2–xS has become one of the most promising thermoelectric materials for application in the middle-high temperature range. Its advantages include the abundance, low cost, and safety of its elements and a high performance at relatively elevated temperatures. However, stability issues limit its operation current and temperature, thus calling for the optimization of the material performance in the middle temperature range. Here, we present a synthetic protocol for large scale production of covellite CuS nanoparticles at ambient temperature and atmosphere, and using water as a solvent. The crystal phase and stoichiometry of the particles are afterward tuned through an annealing process at a moderate temperature under inert or reducing atmosphere. While annealing under argon results in Cu1.8S nanopowder with a rhombohedral crystal phase, annealing in an atmosphere containing hydrogen leads to tetragonal Cu1.96S. High temperature X-ray diffraction analysis shows the material annealed in argon to transform to the cubic phase at ca. 400 K, while the material annealed in the presence of hydrogen undergoes two phase transitions, first to hexagonal and then to the cubic structure. The annealing atmosphere, temperature, and time allow adjustment of the density of copper vacancies and thus tuning of the charge carrier concentration and material transport properties. In this direction, the material annealed under Ar is characterized by higher electrical conductivities but lower Seebeck coefficients than the material annealed in the presence of hydrogen. By optimizing the charge carrier concentration through the annealing time, Cu2–xS with record figures of merit in the middle temperature range, up to 1.41 at 710 K, is obtained. We finally demonstrate that this strategy, based on a low-cost and scalable solution synthesis process, is also suitable for the production of high performance Cu2–xS layers using high throughput and cost-effective printing technologies.}, author = {Li, Mengyao and Liu, Yu and Zhang, Yu and Han, Xu and Zhang, Ting and Zuo, Yong and Xie, Chenyang and Xiao, Ke and Arbiol, Jordi and Llorca, Jordi and Ibáñez, Maria and Liu, Junfeng and Cabot, Andreu}, issn = {1936-086X}, journal = {ACS Nano}, keywords = {General Engineering, General Physics and Astronomy, General Materials Science}, number = {3}, pages = {4967–4978}, publisher = {American Chemical Society }, title = {{Effect of the annealing atmosphere on crystal phase and thermoelectric properties of copper sulfide}}, doi = {10.1021/acsnano.0c09866}, volume = {15}, year = {2021}, } @article{9304, abstract = {The high processing cost, poor mechanical properties and moderate performance of Bi2Te3–based alloys used in thermoelectric devices limit the cost-effectiveness of this energy conversion technology. Towards solving these current challenges, in the present work, we detail a low temperature solution-based approach to produce Bi2Te3-Cu2-xTe nanocomposites with improved thermoelectric performance. Our approach consists in combining proper ratios of colloidal nanoparticles and to consolidate the resulting mixture into nanocomposites using a hot press. The transport properties of the nanocomposites are characterized and compared with those of pure Bi2Te3 nanomaterials obtained following the same procedure. In contrast with most previous works, the presence of Cu2-xTe nanodomains does not result in a significant reduction of the lattice thermal conductivity of the reference Bi2Te3 nanomaterial, which is already very low. However, the introduction of Cu2-xTe yields a nearly threefold increase of the power factor associated to a simultaneous increase of the Seebeck coefficient and electrical conductivity at temperatures above 400 K. Taking into account the band alignment of the two materials, we rationalize this increase by considering that Cu2-xTe nanostructures, with a relatively low electron affinity, are able to inject electrons into Bi2Te3, enhancing in this way its electrical conductivity. The simultaneous increase of the Seebeck coefficient is related to the energy filtering of charge carriers at energy barriers within Bi2Te3 domains associated with the accumulation of electrons in regions nearby a Cu2-xTe/Bi2Te3 heterojunction. Overall, with the incorporation of a proper amount of Cu2-xTe nanoparticles, we demonstrate a 250% improvement of the thermoelectric figure of merit of Bi2Te3.}, author = {Zhang, Yu and Xing, Congcong and Liu, Yu and Li, Mengyao and Xiao, Ke and Guardia, Pablo and Lee, Seungho and Han, Xu and Moghaddam, Ahmad and Roa, Joan J and Arbiol, Jordi and Ibáñez, Maria and Pan, Kai and Prato, Mirko and Xie, Ying and Cabot, Andreu}, issn = {1385-8947}, journal = {Chemical Engineering Journal}, number = {8}, publisher = {Elsevier}, title = {{Influence of copper telluride nanodomains on the transport properties of n-type bismuth telluride}}, doi = {10.1016/j.cej.2021.129374}, volume = {418}, year = {2021}, } @article{9305, abstract = {Copper chalcogenides are outstanding thermoelectric materials for applications in the medium-high temperature range. Among different chalcogenides, while Cu2−xSe is characterized by higher thermoelectric figures of merit, Cu2−xS provides advantages in terms of low cost and element abundance. In the present work, we investigate the effect of different dopants to enhance the Cu2−xS performance and also its thermal stability. Among the tested options, Pb-doped Cu2−xS shows the highest improvement in stability against sulfur volatilization. Additionally, Pb incorporation allows tuning charge carrier concentration, which enables a significant improvement of the power factor. We demonstrate here that the introduction of an optimal additive amount of just 0.3% results in a threefold increase of the power factor in the middle-temperature range (500–800 K) and a record dimensionless thermoelectric figure of merit above 2 at 880 K.}, author = {Zhang, Yu and Xing, Congcong and Liu, Yu and Spadaro, Maria Chiara and Wang, Xiang and Li, Mengyao and Xiao, Ke and Zhang, Ting and Guardia, Pablo and Lim, Khak Ho and Moghaddam, Ahmad Ostovari and Llorca, Jordi and Arbiol, Jordi and Ibáñez, Maria and Cabot, Andreu}, issn = {2211-2855}, journal = {Nano Energy}, number = {7}, publisher = {Elsevier}, title = {{Doping-mediated stabilization of copper vacancies to promote thermoelectric properties of Cu2-xS}}, doi = {10.1016/j.nanoen.2021.105991}, volume = {85}, year = {2021}, } @article{9626, abstract = {SnSe, a wide-bandgap semiconductor, has attracted significant attention from the thermoelectric (TE) community due to its outstanding TE performance deriving from the ultralow thermal conductivity and advantageous electronic structures. Here, we promoted the TE performance of n-type SnSe polycrystals through bandgap engineering and vacancy compensation. We found that PbTe can significantly reduce the wide bandgap of SnSe to reduce the impurity transition energy, largely enhancing the carrier concentration. Also, PbTe-induced crystal symmetry promotion increases the carrier mobility, preserving large Seebeck coefficient. Consequently, a maximum ZT of ∼1.4 at 793 K is obtained in Br doped SnSe–13%PbTe. Furthermore, we found that extra Sn in n-type SnSe can compensate for the intrinsic Sn vacancies and form electron donor-like metallic Sn nanophases. The Sn nanophases near the grain boundary could also reduce the intergrain energy barrier which largely enhances the carrier mobility. As a result, a maximum ZT value of ∼1.7 at 793 K and an average ZT (ZTave) of ∼0.58 in 300–793 K are achieved in Br doped Sn1.08Se–13%PbTe. Our findings provide a novel strategy to promote the TE performance in wide-bandgap semiconductors.}, author = {Su, Lizhong and Hong, Tao and Wang, Dongyang and Wang, Sining and Qin, Bingchao and Zhang, Mengmeng and Gao, Xiang and Chang, Cheng and Zhao, Li Dong}, issn = {2542-5293}, journal = {Materials Today Physics}, publisher = {Elsevier}, title = {{Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation}}, doi = {10.1016/j.mtphys.2021.100452}, volume = {20}, year = {2021}, } @article{10073, abstract = {Thermoelectric materials enable the direct conversion between heat and electricity. SnTe is a promising candidate due to its high charge transport performance. Here, we prepared SnTe nanocomposites by employing an aqueous method to synthetize SnTe nanoparticles (NP), followed by a unique surface treatment prior NP consolidation. This synthetic approach allowed optimizing the charge and phonon transport synergistically. The novelty of this strategy was the use of a soluble PbS molecular complex prepared using a thiol-amine solvent mixture that upon blending is adsorbed on the SnTe NP surface. Upon consolidation with spark plasma sintering, SnTe-PbS nanocomposite is formed. The presence of PbS complexes significantly compensates for the Sn vacancy and increases the average grain size of the nanocomposite, thus improving the carrier mobility. Moreover, lattice thermal conductivity is also reduced by the Pb and S-induced mass and strain fluctuation. As a result, an enhanced ZT of ca. 0.8 is reached at 873 K. Our finding provides a novel strategy to conduct rational surface treatment on NP-based thermoelectrics.}, author = {Chang, Cheng and Ibáñez, Maria}, issn = {1996-1944}, journal = {Materials}, number = {18}, publisher = {MDPI}, title = {{Enhanced thermoelectric performance by surface engineering in SnTe-PbS nanocomposites}}, doi = {10.3390/ma14185416}, volume = {14}, year = {2021}, } @article{10123, abstract = {Solution synthesis of particles emerged as an alternative to prepare thermoelectric materials with less demanding processing conditions than conventional solid-state synthetic methods. However, solution synthesis generally involves the presence of additional molecules or ions belonging to the precursors or added to enable solubility and/or regulate nucleation and growth. These molecules or ions can end up in the particles as surface adsorbates and interfere in the material properties. This work demonstrates that ionic adsorbates, in particular Na⁺ ions, are electrostatically adsorbed in SnSe particles synthesized in water and play a crucial role not only in directing the material nano/microstructure but also in determining the transport properties of the consolidated material. In dense pellets prepared by sintering SnSe particles, Na remains within the crystal lattice as dopant, in dislocations, precipitates, and forming grain boundary complexions. These results highlight the importance of considering all the possible unintentional impurities to establish proper structure-property relationships and control material properties in solution-processed thermoelectric materials.}, author = {Liu, Yu and Calcabrini, Mariano and Yu, Yuan and Genç, Aziz and Chang, Cheng and Costanzo, Tommaso and Kleinhanns, Tobias and Lee, Seungho and Llorca, Jordi and Cojocaru‐Mirédin, Oana and Ibáñez, Maria}, issn = {1521-4095}, journal = {Advanced Materials}, keywords = {mechanical engineering, mechanics of materials, general materials science}, number = {52}, publisher = {Wiley}, title = {{The importance of surface adsorbates in solution‐processed thermoelectric materials: The case of SnSe}}, doi = {10.1002/adma.202106858}, volume = {33}, year = {2021}, } @article{10327, abstract = {Composite materials offer numerous advantages in a wide range of applications, including thermoelectrics. Here, semiconductor–metal composites are produced by just blending nanoparticles of a sulfide semiconductor obtained in aqueous solution and at room temperature with a metallic Cu powder. The obtained blend is annealed in a reducing atmosphere and afterward consolidated into dense polycrystalline pellets through spark plasma sintering (SPS). We observe that, during the annealing process, the presence of metallic copper activates a partial reduction of the PbS, resulting in the formation of PbS–Pb–CuxS composites. The presence of metallic lead during the SPS process habilitates the liquid-phase sintering of the composite. Besides, by comparing the transport properties of PbS, the PbS–Pb–CuxS composites, and PbS–CuxS composites obtained by blending PbS and CuxS nanoparticles, we demonstrate that the presence of metallic lead decisively contributes to a strong increase of the charge carrier concentration through spillover of charge carriers enabled by the low work function of lead. The increase in charge carrier concentration translates into much higher electrical conductivities and moderately lower Seebeck coefficients. These properties translate into power factors up to 2.1 mW m–1 K–2 at ambient temperature, well above those of PbS and PbS + CuxS. Additionally, the presence of multiple phases in the final composite results in a notable decrease in the lattice thermal conductivity. Overall, the introduction of metallic copper in the initial blend results in a significant improvement of the thermoelectric performance of PbS, reaching a dimensionless thermoelectric figure of merit ZT = 1.1 at 750 K, which represents about a 400% increase over bare PbS. Besides, an average ZTave = 0.72 in the temperature range 320–773 K is demonstrated.}, author = {Li, Mengyao and Liu, Yu and Zhang, Yu and Han, Xu and Xiao, Ke and Nabahat, Mehran and Arbiol, Jordi and Llorca, Jordi and Ibáñez, Maria and Cabot, Andreu}, issn = {1944-8252}, journal = {ACS Applied Materials and Interfaces}, keywords = {CuxS, PbS, energy conversion, nanocomposite, nanoparticle, solution synthesis, thermoelectric}, number = {43}, pages = {51373–51382}, publisher = {American Chemical Society }, title = {{PbS–Pb–CuxS composites for thermoelectric application}}, doi = {10.1021/acsami.1c15609}, volume = {13}, year = {2021}, } @article{10534, abstract = {For many years, fullerene derivatives have been the main n-type material of organic electronics and optoelectronics. Recently, fullerene derivatives functionalized with ethylene glycol (EG) side chains have been showing important properties such as enhanced dielectric constants, facile doping and enhanced self-assembly capabilities. Here, we have prepared field-effect transistors using a series of these fullerene derivatives equipped with EG side chains of different lengths. Transport data show the beneficial effect of increasing the EG side chain. In order to understand the material properties, full structural determination of these fullerene derivatives has been achieved by coupling the X-ray data with molecular dynamics (MD) simulations. The increase in transport properties is paired with the formation of extended layered structures, efficient molecular packing and an increase in the crystallite alignment. The layer-like structure is composed of conducting layers, containing of closely packed C60 balls approaching the inter-distance of 1 nm, that are separated by well-defined EG layers, where the EG chains are rather splayed with the chain direction almost perpendicular to the layer normal. Such a layered structure appears highly ordered and highly aligned with the C60 planes oriented parallel to the substrate in the thin film configuration. The order inside the thin film increases with the EG chain length, allowing the systems to achieve mobilities as high as 0.053 cm2 V−1 s−1. Our work elucidates the structure of these interesting semiconducting organic molecules and shows that the synergistic use of X-ray structural analysis and MD simulations is a powerful tool to identify the structure of thin organic films for optoelectronic applications.}, author = {Dong, Jingjin and Sami, Selim and Balazs, Daniel and Alessandri, Riccardo and Jahani, Fatimeh and Qiu, Li and Marrink, Siewert J. and Havenith, Remco W.A. and Hummelen, Jan C. and Loi, Maria A. and Portale, Giuseppe}, issn = {2050-7526}, journal = {Journal of Materials Chemistry C}, number = {45}, pages = {16217--16225}, publisher = {Royal Society of Chemistry}, title = {{Fullerene derivatives with oligoethylene-glycol side chains: An investigation on the origin of their outstanding transport properties}}, doi = {10.1039/d1tc02753k}, volume = {9}, year = {2021}, } @article{9829, abstract = {In 2020, many in-person scientific events were canceled due to the COVID-19 pandemic, creating a vacuum in networking and knowledge exchange between scientists. To fill this void in scientific communication, a group of early career nanocrystal enthusiasts launched the virtual seminar series, News in Nanocrystals, in the summer of 2020. By the end of the year, the series had attracted over 850 participants from 46 countries. In this Nano Focus, we describe the process of organizing the News in Nanocrystals seminar series; discuss its growth, emphasizing what the organizers have learned in terms of diversity and accessibility; and provide an outlook for the next steps and future opportunities. This summary and analysis of experiences and learned lessons are intended to inform the broader scientific community, especially those who are looking for avenues to continue fostering discussion and scientific engagement virtually, both during the pandemic and after.}, author = {Baranov, Dmitry and Šverko, Tara and Moot, Taylor and Keller, Helena R. and Klein, Megan D. and Vishnu, E. K. and Balazs, Daniel and Shulenberger, Katherine E.}, issn = {1936086X}, journal = {ACS Nano}, number = {7}, pages = {10743–10747}, publisher = {American Chemical Society}, title = {{News in Nanocrystals seminar: Self-assembly of early career researchers toward globally accessible nanoscience}}, doi = {10.1021/acsnano.1c03276}, volume = {15}, year = {2021}, } @article{8039, abstract = {In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m–1 K–1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K.}, author = {Zhang, Yu and Liu, Yu and Xing, Congcong and Zhang, Ting and Li, Mengyao and Pacios, Mercè and Yu, Xiaoting and Arbiol, Jordi and Llorca, Jordi and Cadavid, Doris and Ibáñez, Maria and Cabot, Andreu}, issn = {19448252}, journal = {ACS Applied Materials and Interfaces}, number = {24}, pages = {27104--27111}, publisher = {American Chemical Society}, title = {{Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices}}, doi = {10.1021/acsami.0c04331}, volume = {12}, year = {2020}, } @article{8189, abstract = {Direct ethanol fuel cells (DEFCs) show a huge potential to power future electric vehicles and portable electronics, but their deployment is currently limited by the unavailability of proper electrocatalysis for the ethanol oxidation reaction (EOR). In this work, we engineer a new electrocatalyst by incorporating phosphorous into a palladium-tin alloy and demonstrate a significant performance improvement toward EOR. We first detail a synthetic method to produce Pd2Sn:P nanocrystals that incorporate 35% of phosphorus. These nanoparticles are supported on carbon black and tested for EOR. Pd2Sn:P/C catalysts exhibit mass current densities up to 5.03 A mgPd−1, well above those of Pd2Sn/C, PdP2/C and Pd/C reference catalysts. Furthermore, a twofold lower Tafel slope and a much longer durability are revealed for the Pd2Sn:P/C catalyst compared with Pd/C. The performance improvement is rationalized with the aid of density functional theory (DFT) calculations considering different phosphorous chemical environments. Depending on its oxidation state, surface phosphorus introduces sites with low energy OH− adsorption and/or strongly influences the electronic structure of palladium and tin to facilitate the oxidation of the acetyl to acetic acid, which is considered the EOR rate limiting step. DFT calculations also points out that the durability improvement of Pd2Sn:P/C catalyst is associated to the promotion of OH adsorption that accelerates the oxidation of intermediate poisoning COads, reactivating the catalyst surface.}, author = {Yu, Xiaoting and Liu, Junfeng and Li, Junshan and Luo, Zhishan and Zuo, Yong and Xing, Congcong and Llorca, Jordi and Nasiou, Déspina and Arbiol, Jordi and Pan, Kai and Kleinhanns, Tobias and Xie, Ying and Cabot, Andreu}, issn = {2211-2855}, journal = {Nano Energy}, number = {11}, publisher = {Elsevier}, title = {{Phosphorous incorporation in Pd2Sn alloys for electrocatalytic ethanol oxidation}}, doi = {10.1016/j.nanoen.2020.105116}, volume = {77}, year = {2020}, } @article{8746, abstract = {Research in the field of colloidal semiconductor nanocrystals (NCs) has progressed tremendously, mostly because of their exceptional optoelectronic properties. Core@shell NCs, in which one or more inorganic layers overcoat individual NCs, recently received significant attention due to their remarkable optical characteristics. Reduced Auger recombination, suppressed blinking, and enhanced carrier multiplication are among the merits of core@shell NCs. Despite their importance in device development, the influence of the shell and the surface modification of the core@shell NC assemblies on the charge carrier transport remains a pertinent research objective. Type-II PbTe@PbS core@shell NCs, in which exclusive electron transport was demonstrated, still exhibit instability of their electron ransport. Here, we demonstrate the enhancement of electron transport and stability in PbTe@PbS core@shell NC assemblies using iodide as a surface passivating ligand. The combination of the PbS shelling and the use of the iodide ligand contributes to the addition of one mobile electron for each core@shell NC. Furthermore, both electron mobility and on/off current modulation ratio values of the core@shell NC field-effect transistor are steady with the usage of iodide. Excellent stability in these exclusively electron-transporting core@shell NCs paves the way for their utilization in electronic devices. }, author = {Miranti, Retno and Septianto, Ricky Dwi and Ibáñez, Maria and Kovalenko, Maksym V. and Matsushita, Nobuhiro and Iwasa, Yoshihiro and Bisri, Satria Zulkarnaen}, issn = {1077-3118}, journal = {Applied Physics Letters}, number = {17}, publisher = {AIP Publishing}, title = {{Electron transport in iodide-capped core@shell PbTe@PbS colloidal nanocrystal solids}}, doi = {10.1063/5.0025965}, volume = {117}, year = {2020}, } @article{8747, abstract = {Appropriately designed nanocomposites allow improving the thermoelectric performance by several mechanisms, including phonon scattering, modulation doping and energy filtering, while additionally promoting better mechanical properties than those of crystalline materials. Here, a strategy for producing Bi2Te3–Cu2xTe nanocomposites based on the consolidation of heterostructured nanoparticles is described and the thermoelectric properties of the obtained materials are investigated. We first detail a two-step solution-based process to produce Bi2Te3–Cu2xTe heteronanostructures, based on the growth of Cu2xTe nanocrystals on the surface of Bi2Te3 nanowires. We characterize the structural and chemical properties of the synthesized nanostructures and of the nanocomposites produced by hot-pressing the particles at moderate temperatures. Besides, the transport properties of the nanocomposites are investigated as a function of the amount of Cu introduced. Overall, the presence of Cu decreases the material thermal conductivity through promotion of phonon scattering, modulates the charge carrier concentration through electron spillover, and increases the Seebeck coefficient through filtering of charge carriers at energy barriers. These effects result in an improvement of over 50% of the thermoelectric figure of merit of Bi2Te3.}, author = {Zhang, Yu and Liu, Yu and Calcabrini, Mariano and Xing, Congcong and Han, Xu and Arbiol, Jordi and Cadavid, Doris and Ibáñez, Maria and Cabot, Andreu}, journal = {Journal of Materials Chemistry C}, number = {40}, pages = {14092--14099}, publisher = {Royal Society of Chemistry}, title = {{Bismuth telluride-copper telluride nanocomposites from heterostructured building blocks}}, doi = {10.1039/D0TC02182B}, volume = {8}, year = {2020}, } @article{8926, abstract = {Bimetallic nanoparticles with tailored size and specific composition have shown promise as stable and selective catalysts for electrochemical reduction of CO2 (CO2R) in batch systems. Yet, limited effort was devoted to understand the effect of ligand coverage and postsynthesis treatments on CO2 reduction, especially under industrially applicable conditions, such as at high currents (>100 mA/cm2) using gas diffusion electrodes (GDE) and flow reactors. In this work, Cu–Ag core–shell nanoparticles (11 ± 2 nm) were prepared with three different surface modes: (i) capped with oleylamine, (ii) capped with monoisopropylamine, and (iii) surfactant-free with a reducing borohydride agent; Cu–Ag (OAm), Cu–Ag (MIPA), and Cu–Ag (NaBH4), respectively. The ligand exchange and removal was evidenced by infrared spectroscopy (ATR-FTIR) analysis, whereas high-resolution scanning transmission electron microscopy (HAADF-STEM) showed their effect on the interparticle distance and nanoparticle rearrangement. Later on, we developed a process-on-substrate method to track these effects on CO2R. Cu–Ag (OAm) gave a lower on-set potential for hydrocarbon production, whereas Cu–Ag (MIPA) and Cu–Ag (NaBH4) promoted syngas production. The electrochemical impedance and surface area analysis on the well-controlled electrodes showed gradual increases in the electrical conductivity and active surface area after each surface treatment. We found that the increasing amount of the triple phase boundaries (the meeting point for the electron–electrolyte–CO2 reactant) affect the required electrode potential and eventually the C+2e̅/C2e̅ product ratio. This study highlights the importance of the electron transfer to those active sites affected by the capping agents—particularly on larger substrates that are crucial for their industrial application.}, author = {Irtem, Erdem and Arenas Esteban, Daniel and Duarte, Miguel and Choukroun, Daniel and Lee, Seungho and Ibáñez, Maria and Bals, Sara and Breugelmans, Tom}, issn = {21555435}, journal = {ACS Catalysis}, number = {22}, pages = {13468--13478}, publisher = {American Chemical Society}, title = {{Ligand-mode directed selectivity in Cu-Ag core-shell based gas diffusion electrodes for CO2 electroreduction}}, doi = {10.1021/acscatal.0c03210}, volume = {10}, year = {2020}, } @article{7467, abstract = {Nanomaterials produced from the bottom-up assembly of nanocrystals may incorporate ∼1020–1021 cm–3 not fully coordinated surface atoms, i.e., ∼1020–1021 cm–3 potential donor or acceptor states that can strongly affect transport properties. Therefore, to exploit the full potential of nanocrystal building blocks to produce functional nanomaterials and thin films, a proper control of their surface chemistry is required. Here, we analyze how the ligand stripping procedure influences the charge and heat transport properties of sintered PbSe nanomaterials produced from the bottom-up assembly of colloidal PbSe nanocrystals. First, we show that the removal of the native organic ligands by thermal decomposition in an inert atmosphere leaves relatively large amounts of carbon at the crystal interfaces. This carbon blocks crystal growth during consolidation and at the same time hampers charge and heat transport through the final nanomaterial. Second, we demonstrate that, by stripping ligands from the nanocrystal surface before consolidation, nanomaterials with larger crystal domains, lower porosity, and higher charge carrier concentrations are obtained, thus resulting in nanomaterials with higher electrical and thermal conductivities. In addition, the ligand displacement leaves the nanocrystal surface unprotected, facilitating oxidation and chalcogen evaporation. The influence of the ligand displacement on the nanomaterial charge transport properties is rationalized here using a two-band model based on the standard Boltzmann transport equation with the relaxation time approximation. Finally, we present an application of the produced functional nanomaterials by modeling, fabricating, and testing a simple PbSe-based thermoelectric device with a ring geometry.}, author = {Cadavid, Doris and Ortega, Silvia and Illera, Sergio and Liu, Yu and Ibáñez, Maria and Shavel, Alexey and Zhang, Yu and Li, Mengyao and López, Antonio M. and Noriega, Germán and Durá, Oscar Juan and López De La Torre, M. A. and Prades, Joan Daniel and Cabot, Andreu}, issn = {2574-0962}, journal = {ACS Applied Energy Materials}, number = {3}, pages = {2120--2129}, publisher = {American Chemical Society}, title = {{Influence of the ligand stripping on the transport properties of nanoparticle-based PbSe nanomaterials}}, doi = {10.1021/acsaem.9b02137}, volume = {3}, year = {2020}, } @article{7634, abstract = {Assemblies of colloidal semiconductor nanocrystals (NCs) in the form of thin solid films leverage the size-dependent quantum confinement properties and the wet chemical methods vital for the development of the emerging solution-processable electronics, photonics, and optoelectronics technologies. The ability to control the charge carrier transport in the colloidal NC assemblies is fundamental for altering their electronic and optical properties for the desired applications. Here we demonstrate a strategy to render the solids of narrow-bandgap NC assemblies exclusively electron-transporting by creating a type-II heterojunction via shelling. Electronic transport of molecularly cross-linked PbTe@PbS core@shell NC assemblies is measured using both a conventional solid gate transistor and an electric-double-layer transistor, as well as compared with those of core-only PbTe NCs. In contrast to the ambipolar characteristics demonstrated by many narrow-bandgap NCs, the core@shell NCs exhibit exclusive n-type transport, i.e., drastically suppressed contribution of holes to the overall transport. The PbS shell that forms a type-II heterojunction assists the selective carrier transport by heavy doping of electrons into the PbTe-core conduction level and simultaneously strongly localizes the holes within the NC core valence level. This strongly enhanced n-type transport makes these core@shell NCs suitable for applications where ambipolar characteristics should be actively suppressed, in particular, for thermoelectric and electron-transporting layers in photovoltaic devices.}, author = {Miranti, Retno and Shin, Daiki and Septianto, Ricky Dwi and Ibáñez, Maria and Kovalenko, Maksym V. and Matsushita, Nobuhiro and Iwasa, Yoshihiro and Bisri, Satria Zulkarnaen}, issn = {1936-086X}, journal = {ACS Nano}, number = {3}, pages = {3242--3250}, publisher = {American Chemical Society}, title = {{Exclusive electron transport in Core@Shell PbTe@PbS colloidal semiconductor nanocrystal assemblies}}, doi = {10.1021/acsnano.9b08687}, volume = {14}, year = {2020}, }