[{"publication":"Materials Science in Semiconductor Processing","has_accepted_license":"1","oa_version":"Published Version","project":[{"_id":"34c0acea-11ca-11ed-8bc3-8775e10fd452","name":"Integrated GermaNIum quanTum tEchnology","grant_number":"101069515"}],"month":"02","article_number":"108231","language":[{"iso":"eng"}],"keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"date_published":"2024-02-20T00:00:00Z","type":"journal_article","publication_identifier":{"issn":["1369-8001"]},"oa":1,"main_file_link":[{"open_access":"1","url":"https://doi.org/10.1016/j.mssp.2024.108231"}],"status":"public","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","_id":"15018","license":"https://creativecommons.org/licenses/by/4.0/","author":[{"last_name":"Shimura","first_name":"Yosuke","full_name":"Shimura, Yosuke"},{"last_name":"Godfrin","first_name":"Clement","full_name":"Godfrin, Clement"},{"last_name":"Hikavyy","first_name":"Andriy","full_name":"Hikavyy, Andriy"},{"last_name":"Li","first_name":"Roy","full_name":"Li, Roy"},{"first_name":"Juan L","last_name":"Aguilera Servin","orcid":"0000-0002-2862-8372","full_name":"Aguilera Servin, Juan L","id":"2A67C376-F248-11E8-B48F-1D18A9856A87"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios","orcid":"0000-0001-8342-202X"},{"full_name":"Favia, Paola","last_name":"Favia","first_name":"Paola"},{"full_name":"Han, Han","first_name":"Han","last_name":"Han"},{"last_name":"Wan","first_name":"Danny","full_name":"Wan, Danny"},{"full_name":"de Greve, Kristiaan","first_name":"Kristiaan","last_name":"de Greve"},{"full_name":"Loo, Roger","first_name":"Roger","last_name":"Loo"}],"issue":"5","publication_status":"epub_ahead","department":[{"_id":"GeKa"},{"_id":"NanoFab"}],"article_processing_charge":"No","date_created":"2024-02-22T14:10:40Z","title":"Compressively strained epitaxial Ge layers for quantum computing applications","intvolume":"       174","quality_controlled":"1","publisher":"Elsevier","article_type":"original","date_updated":"2024-02-26T10:36:35Z","year":"2024","citation":{"apa":"Shimura, Y., Godfrin, C., Hikavyy, A., Li, R., Aguilera Servin, J. L., Katsaros, G., … Loo, R. (2024). Compressively strained epitaxial Ge layers for quantum computing applications. <i>Materials Science in Semiconductor Processing</i>. Elsevier. <a href=\"https://doi.org/10.1016/j.mssp.2024.108231\">https://doi.org/10.1016/j.mssp.2024.108231</a>","ama":"Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. <i>Materials Science in Semiconductor Processing</i>. 2024;174(5). doi:<a href=\"https://doi.org/10.1016/j.mssp.2024.108231\">10.1016/j.mssp.2024.108231</a>","ieee":"Y. Shimura <i>et al.</i>, “Compressively strained epitaxial Ge layers for quantum computing applications,” <i>Materials Science in Semiconductor Processing</i>, vol. 174, no. 5. Elsevier, 2024.","chicago":"Shimura, Yosuke, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan L Aguilera Servin, Georgios Katsaros, Paola Favia, et al. “Compressively Strained Epitaxial Ge Layers for Quantum Computing Applications.” <i>Materials Science in Semiconductor Processing</i>. Elsevier, 2024. <a href=\"https://doi.org/10.1016/j.mssp.2024.108231\">https://doi.org/10.1016/j.mssp.2024.108231</a>.","mla":"Shimura, Yosuke, et al. “Compressively Strained Epitaxial Ge Layers for Quantum Computing Applications.” <i>Materials Science in Semiconductor Processing</i>, vol. 174, no. 5, 108231, Elsevier, 2024, doi:<a href=\"https://doi.org/10.1016/j.mssp.2024.108231\">10.1016/j.mssp.2024.108231</a>.","short":"Y. Shimura, C. Godfrin, A. Hikavyy, R. Li, J.L. Aguilera Servin, G. Katsaros, P. Favia, H. Han, D. Wan, K. de Greve, R. Loo, Materials Science in Semiconductor Processing 174 (2024).","ista":"Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 174(5), 108231."},"doi":"10.1016/j.mssp.2024.108231","day":"20","abstract":[{"text":"The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers. The assessment of the layer and the interface qualities for a buried strained Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping confirmed that the reduction of the growth temperature enables the 2-dimensional growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless, dislocations at the top and/or bottom interface of the Ge layer were observed by means of electron channeling contrast imaging, suggesting the importance of the careful dislocation assessment. The interface abruptness does not depend on the selection of the precursor gases, but it is strongly influenced by the growth temperature which affects the coverage of the surface H-passivation. The mobility of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010 /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the heterostructure thanks to the high Si0.3Ge0.7 SRB quality.","lang":"eng"}],"acknowledgement":"The Ge project received funding from the European Union's Horizon Europe programme under the Grant Agreement 101069515 – IGNITE. Siltronic AG is acknowledged for providing the SRB wafers. This work was supported by Imec's Industrial Affiliation Program on Quantum Computing.","volume":174,"ddc":["530"]},{"date_published":"2024-01-02T00:00:00Z","type":"journal_article","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)"},"oa":1,"oaworkID":1,"publication_identifier":{"eissn":["2041-1723"]},"supplementarymaterial":"yes","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","status":"public","file":[{"file_name":"2024_NatureComm_Valentini.pdf","content_type":"application/pdf","date_updated":"2024-01-17T11:03:00Z","file_size":2336595,"checksum":"ef79173b45eeaf984ffa61ef2f8a52ab","date_created":"2024-01-17T11:03:00Z","creator":"dernst","file_id":"14825","relation":"main_file","success":1,"access_level":"open_access"}],"publication":"Nature Communications","has_accepted_license":"1","month":"01","article_number":"169","oa_version":"Published Version","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"project":[{"call_identifier":"H2020","_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","grant_number":"862046","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS"},{"_id":"34c0acea-11ca-11ed-8bc3-8775e10fd452","grant_number":"101069515","name":"Integrated GermaNIum quanTum tEchnology"},{"grant_number":"101115315","name":"Quantum bits with Kitaev Transmons","_id":"bdc2ca30-d553-11ed-ba76-cf164a5bb811"},{"grant_number":"P32235","name":"Towards scalable hut wire quantum devices","call_identifier":"FWF","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E"},{"_id":"bd8bd29e-d553-11ed-ba76-f0070d4b237a","grant_number":"P36507","name":"Merging spin and superconducting qubits in planar Ge"},{"grant_number":"F8606","name":"Conventional and unconventional topological superconductors","_id":"34a66131-11ca-11ed-8bc3-a31681c6b03e"}],"language":[{"iso":"eng"}],"APC_amount":"12345","external_id":{"oaworkID":["w4390499170"],"pmid":["38167818"]},"date_updated":"2026-02-26T11:39:00Z","citation":{"ama":"Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. <i>Nature Communications</i>. 2024;15. doi:<a href=\"https://doi.org/10.1038/s41467-023-44114-0\">10.1038/s41467-023-44114-0</a>","apa":"Valentini, M., Sagi, O., Baghumyan, L., de Gijsel, T., Jung, J., Calcaterra, S., … Katsaros, G. (2024). Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. <i>Nature Communications</i>. Springer Nature. <a href=\"https://doi.org/10.1038/s41467-023-44114-0\">https://doi.org/10.1038/s41467-023-44114-0</a>","chicago":"Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Parity-Conserving Cooper-Pair Transport and Ideal Superconducting Diode in Planar Germanium.” <i>Nature Communications</i>. Springer Nature, 2024. <a href=\"https://doi.org/10.1038/s41467-023-44114-0\">https://doi.org/10.1038/s41467-023-44114-0</a>.","ieee":"M. Valentini <i>et al.</i>, “Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium,” <i>Nature Communications</i>, vol. 15. Springer Nature, 2024.","short":"M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra, A. Ballabio, J.L. Aguilera Servin, K. Aggarwal, M. Janik, T. Adletzberger, R. Seoane Souto, M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella, G. Katsaros, Nature Communications 15 (2024).","mla":"Valentini, Marco, et al. “Parity-Conserving Cooper-Pair Transport and Ideal Superconducting Diode in Planar Germanium.” <i>Nature Communications</i>, vol. 15, 169, Springer Nature, 2024, doi:<a href=\"https://doi.org/10.1038/s41467-023-44114-0\">10.1038/s41467-023-44114-0</a>.","ista":"Valentini M, Sagi O, Baghumyan L, de Gijsel T, Jung J, Calcaterra S, Ballabio A, Aguilera Servin JL, Aggarwal K, Janik M, Adletzberger T, Seoane Souto R, Leijnse M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. 2024. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 15, 169."},"year":"2024","abstract":[{"text":"Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a sin(2y) CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on  the same silicon technology compatible platform.","lang":"eng"}],"doi":"10.1038/s41467-023-44114-0","day":"02","ddc":["530"],"volume":15,"acknowledgement":"We acknowledge Alexander Brinkmann, Alessandro Crippa, Francesco Giazotto, Andrew Higginbotham, Andrea Iorio, Giordano Scappucci, Christian Schonenberger, and Lukas Splitthoff for helpful discussions. We thank Marcel Verheijen for the support in the TEM analysis. This research and related results were made possible with the support of the NOMIS\r\nFoundation. It was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union’s Horizon 2020 research andinnovation programme under Grant Agreement No 862046, the HORIZONRIA\r\n101069515 project, the European Innovation Council Pathfinder grant no. 101115315 (QuKiT), and the FWF Projects #P-32235, #P-36507 and #F-8606. For the purpose of open access, the authors have applied a CC BY public copyright licence to any Author Accepted Manuscript version arising from this submission. R.S.S. acknowledges Spanish CM “Talento Program\"\r\nProject No. 2022-T1/IND-24070. J.J. acknowledges European Research Council TOCINA 834290.","researchdata_availability":"yes","author":[{"full_name":"Valentini, Marco","last_name":"Valentini","first_name":"Marco","id":"C0BB2FAC-D767-11E9-B658-BC13E6697425"},{"id":"71616374-A8E9-11E9-A7CA-09ECE5697425","last_name":"Sagi","first_name":"Oliver","full_name":"Sagi, Oliver"},{"first_name":"Levon","last_name":"Baghumyan","full_name":"Baghumyan, Levon","id":"7aa1f788-b527-11ee-aa9e-e6111a79e0c7"},{"first_name":"Thijs","last_name":"de Gijsel","full_name":"de Gijsel, Thijs","id":"a0ece13c-b527-11ee-929d-bad130106eee"},{"full_name":"Jung, Jason","last_name":"Jung","first_name":"Jason","id":"4C9ACE7A-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Calcaterra, Stefano","last_name":"Calcaterra","first_name":"Stefano"},{"last_name":"Ballabio","first_name":"Andrea","full_name":"Ballabio, Andrea"},{"id":"2A67C376-F248-11E8-B48F-1D18A9856A87","last_name":"Aguilera Servin","first_name":"Juan L","full_name":"Aguilera Servin, Juan L","orcid":"0000-0002-2862-8372"},{"full_name":"Aggarwal, Kushagra","orcid":"0000-0001-9985-9293","last_name":"Aggarwal","first_name":"Kushagra","id":"b22ab905-3539-11eb-84c3-fc159dcd79cb"},{"id":"396A1950-F248-11E8-B48F-1D18A9856A87","last_name":"Janik","first_name":"Marian","full_name":"Janik, Marian"},{"full_name":"Adletzberger, Thomas","last_name":"Adletzberger","first_name":"Thomas","id":"38756BB2-F248-11E8-B48F-1D18A9856A87"},{"full_name":"Seoane Souto, Rubén","last_name":"Seoane Souto","first_name":"Rubén"},{"full_name":"Leijnse, Martin","first_name":"Martin","last_name":"Leijnse"},{"full_name":"Danon, Jeroen","first_name":"Jeroen","last_name":"Danon"},{"full_name":"Schrade, Constantin","last_name":"Schrade","first_name":"Constantin"},{"full_name":"Bakkers, Erik","last_name":"Bakkers","first_name":"Erik"},{"full_name":"Chrastina, Daniel","first_name":"Daniel","last_name":"Chrastina"},{"last_name":"Isella","first_name":"Giovanni","full_name":"Isella, Giovanni"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","last_name":"Katsaros","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios"}],"dataavailabilitystatement":"All experimental data included in this work are available at https://zenodo.org/records/10119346.","_id":"14793","pmid":1,"scopus_import":"1","title":"Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium","intvolume":"        15","publication_status":"published","department":[{"_id":"GeKa"}],"date_created":"2024-01-14T23:00:56Z","article_processing_charge":"Yes","file_date_updated":"2024-01-17T11:03:00Z","ec_funded":1,"quality_controlled":"1","article_type":"original","publisher":"Springer Nature"}]