---
_id: '13264'
abstract:
- lang: eng
  text: "We build a parametric amplifier with a Josephson field-effect transistor
    (JoFET) as the active element. The resonant frequency of the device is field-effect
    tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of
    instantaneous bandwidth, and a 1-dB compression point of -125.5 dBm when operated
    at a fixed resonance frequency.\r\n\r\n"
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: We thank Shyam Shankar for helpful feedback on the manuscript. We
  gratefully acknowledge the support of the ISTA nanofabrication facility, the Miba
  Machine Shop, and the eMachine Shop. The NYU team acknowledges support from Army
  Research Office Grant No. W911NF2110303.
article_number: '064032'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Duc T
  full_name: Phan, Duc T
  id: 29C8C0B4-F248-11E8-B48F-1D18A9856A87
  last_name: Phan
- first_name: Paul
  full_name: Falthansl-Scheinecker, Paul
  id: 85b43b21-15b2-11ec-abd3-e2c252cc2285
  last_name: Falthansl-Scheinecker
- first_name: Umang
  full_name: Mishra, Umang
  id: 4328fa4c-f128-11eb-9611-c107b0fe4d51
  last_name: Mishra
- first_name: W. M.
  full_name: Strickland, W. M.
  last_name: Strickland
- first_name: D.
  full_name: Langone, D.
  last_name: Langone
- first_name: J.
  full_name: Shabani, J.
  last_name: Shabani
- first_name: Andrew P
  full_name: Higginbotham, Andrew P
  id: 4AD6785A-F248-11E8-B48F-1D18A9856A87
  last_name: Higginbotham
  orcid: 0000-0003-2607-2363
citation:
  ama: Phan DT, Falthansl-Scheinecker P, Mishra U, et al. Gate-tunable superconductor-semiconductor
    parametric amplifier. <i>Physical Review Applied</i>. 2023;19(6). doi:<a href="https://doi.org/10.1103/PhysRevApplied.19.064032">10.1103/PhysRevApplied.19.064032</a>
  apa: Phan, D. T., Falthansl-Scheinecker, P., Mishra, U., Strickland, W. M., Langone,
    D., Shabani, J., &#38; Higginbotham, A. P. (2023). Gate-tunable superconductor-semiconductor
    parametric amplifier. <i>Physical Review Applied</i>. American Physical Society.
    <a href="https://doi.org/10.1103/PhysRevApplied.19.064032">https://doi.org/10.1103/PhysRevApplied.19.064032</a>
  chicago: Phan, Duc T, Paul Falthansl-Scheinecker, Umang Mishra, W. M. Strickland,
    D. Langone, J. Shabani, and Andrew P Higginbotham. “Gate-Tunable Superconductor-Semiconductor
    Parametric Amplifier.” <i>Physical Review Applied</i>. American Physical Society,
    2023. <a href="https://doi.org/10.1103/PhysRevApplied.19.064032">https://doi.org/10.1103/PhysRevApplied.19.064032</a>.
  ieee: D. T. Phan <i>et al.</i>, “Gate-tunable superconductor-semiconductor parametric
    amplifier,” <i>Physical Review Applied</i>, vol. 19, no. 6. American Physical
    Society, 2023.
  ista: Phan DT, Falthansl-Scheinecker P, Mishra U, Strickland WM, Langone D, Shabani
    J, Higginbotham AP. 2023. Gate-tunable superconductor-semiconductor parametric
    amplifier. Physical Review Applied. 19(6), 064032.
  mla: Phan, Duc T., et al. “Gate-Tunable Superconductor-Semiconductor Parametric
    Amplifier.” <i>Physical Review Applied</i>, vol. 19, no. 6, 064032, American Physical
    Society, 2023, doi:<a href="https://doi.org/10.1103/PhysRevApplied.19.064032">10.1103/PhysRevApplied.19.064032</a>.
  short: D.T. Phan, P. Falthansl-Scheinecker, U. Mishra, W.M. Strickland, D. Langone,
    J. Shabani, A.P. Higginbotham, Physical Review Applied 19 (2023).
date_created: 2023-07-23T22:01:12Z
date_published: 2023-06-09T00:00:00Z
date_updated: 2023-11-30T10:56:03Z
day: '09'
department:
- _id: AnHi
- _id: OnHo
doi: 10.1103/PhysRevApplied.19.064032
external_id:
  arxiv:
  - '2206.05746'
  isi:
  - '001012022600004'
intvolume: '        19'
isi: 1
issue: '6'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://arxiv.org/abs/2206.05746
month: '06'
oa: 1
oa_version: Preprint
publication: Physical Review Applied
publication_identifier:
  eissn:
  - 2331-7019
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
  record:
  - id: '14547'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: Gate-tunable superconductor-semiconductor parametric amplifier
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 19
year: '2023'
...