@article{13264,
  abstract     = {We build a parametric amplifier with a Josephson field-effect transistor (JoFET) as the active element. The resonant frequency of the device is field-effect tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1-dB compression point of -125.5 dBm when operated at a fixed resonance frequency.

},
  author       = {Phan, Duc T and Falthansl-Scheinecker, Paul and Mishra, Umang and Strickland, W. M. and Langone, D. and Shabani, J. and Higginbotham, Andrew P},
  issn         = {2331-7019},
  journal      = {Physical Review Applied},
  number       = {6},
  publisher    = {American Physical Society},
  title        = {{Gate-tunable superconductor-semiconductor parametric amplifier}},
  doi          = {10.1103/PhysRevApplied.19.064032},
  volume       = {19},
  year         = {2023},
}