---
_id: '9464'
abstract:
- lang: eng
  text: We firstly introduce the self-assembled growth of highly uniform Ge quantum
    wires with controllable position, distance and length on patterned Si (001) substrates.
    We then present the electrically tunable strong spin-orbit coupling, the first
    Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum
    wires.
acknowledgement: This work was supported by the National Key R&D Program of China
  (Grant No. 2016YFA0301700) and the ERC Starting Grant no. 335497.
article_number: '9420817'
article_processing_charge: No
author:
- first_name: Fei
  full_name: Gao, Fei
  last_name: Gao
- first_name: Jie Yin
  full_name: Zhang, Jie Yin
  last_name: Zhang
- first_name: Jian Huan
  full_name: Wang, Jian Huan
  last_name: Wang
- first_name: Ming
  full_name: Ming, Ming
  last_name: Ming
- first_name: Tina
  full_name: Wang, Tina
  last_name: Wang
- first_name: Jian Jun
  full_name: Zhang, Jian Jun
  last_name: Zhang
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Lada
  full_name: Vukušić, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukušić
  orcid: 0000-0003-2424-8636
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Ke
  full_name: Wang, Ke
  last_name: Wang
- first_name: Gang
  full_name: Xu, Gang
  last_name: Xu
- first_name: Hai Ou
  full_name: Li, Hai Ou
  last_name: Li
- first_name: Guo Ping
  full_name: Guo, Guo Ping
  last_name: Guo
citation:
  ama: 'Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing.
    In: <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference,
    EDTM 2021</i>. IEEE; 2021. doi:<a href="https://doi.org/10.1109/EDTM50988.2021.9420817">10.1109/EDTM50988.2021.9420817</a>'
  apa: 'Gao, F., Zhang, J. Y., Wang, J. H., Ming, M., Wang, T., Zhang, J. J., … Guo,
    G. P. (2021). Ge/Si quantum wires for quantum computing. In <i>2021 5th IEEE Electron
    Devices Technology and Manufacturing Conference, EDTM 2021</i>. Virtual, Online:
    IEEE. <a href="https://doi.org/10.1109/EDTM50988.2021.9420817">https://doi.org/10.1109/EDTM50988.2021.9420817</a>'
  chicago: Gao, Fei, Jie Yin Zhang, Jian Huan Wang, Ming Ming, Tina Wang, Jian Jun
    Zhang, Hannes Watzinger, et al. “Ge/Si Quantum Wires for Quantum Computing.” In
    <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM
    2021</i>. IEEE, 2021. <a href="https://doi.org/10.1109/EDTM50988.2021.9420817">https://doi.org/10.1109/EDTM50988.2021.9420817</a>.
  ieee: F. Gao <i>et al.</i>, “Ge/Si quantum wires for quantum computing,” in <i>2021
    5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>,
    Virtual, Online, 2021.
  ista: 'Gao F, Zhang JY, Wang JH, Ming M, Wang T, Zhang JJ, Watzinger H, Kukucka
    J, Vukušić L, Katsaros G, Wang K, Xu G, Li HO, Guo GP. 2021. Ge/Si quantum wires
    for quantum computing. 2021 5th IEEE Electron Devices Technology and Manufacturing
    Conference, EDTM 2021. EDTM: IEEE Electron Devices Technology and Manufacturing
    Conference, 9420817.'
  mla: Gao, Fei, et al. “Ge/Si Quantum Wires for Quantum Computing.” <i>2021 5th IEEE
    Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>, 9420817,
    IEEE, 2021, doi:<a href="https://doi.org/10.1109/EDTM50988.2021.9420817">10.1109/EDTM50988.2021.9420817</a>.
  short: F. Gao, J.Y. Zhang, J.H. Wang, M. Ming, T. Wang, J.J. Zhang, H. Watzinger,
    J. Kukucka, L. Vukušić, G. Katsaros, K. Wang, G. Xu, H.O. Li, G.P. Guo, in:, 2021
    5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021,
    IEEE, 2021.
conference:
  end_date: 2021-04-11
  location: Virtual, Online
  name: 'EDTM: IEEE Electron Devices Technology and Manufacturing Conference'
  start_date: 2021-04-08
date_created: 2021-06-06T22:01:29Z
date_published: 2021-04-08T00:00:00Z
date_updated: 2023-10-03T12:51:59Z
day: '08'
department:
- _id: GeKa
doi: 10.1109/EDTM50988.2021.9420817
ec_funded: 1
external_id:
  isi:
  - '000675595800006'
isi: 1
language:
- iso: eng
month: '04'
oa_version: None
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
  call_identifier: FP7
  grant_number: '335497'
  name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference,
  EDTM 2021
publication_identifier:
  isbn:
  - '9781728181769'
publication_status: published
publisher: IEEE
quality_controlled: '1'
scopus_import: '1'
status: public
title: Ge/Si quantum wires for quantum computing
type: conference
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2021'
...
---
_id: '8203'
abstract:
- lang: eng
  text: Using inelastic cotunneling spectroscopy we observe a zero field splitting
    within the spin triplet manifold of Ge hut wire quantum dots. The states with
    spin ±1 in the confinement direction are energetically favored by up to 55 μeV
    compared to the spin 0 triplet state because of the strong spin–orbit coupling.
    The reported effect should be observable in a broad class of strongly confined
    hole quantum-dot systems and might need to be considered when operating hole spin
    qubits.
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: "We acknowledge G. Burkard, V. N. Golovach, C. Kloeffel, D.Loss,
  P. Rabl, and M. Rancič ́ for helpful discussions. We\r\nfurther acknowledge T.
  Adletzberger, J. Aguilera, T. Asenov, S. Bagiante, T. Menner, L. Shafeek, P. Taus,
  P. Traunmüller, and D. Waldhausl for their invaluable assistance. This research
  was supported by the Scientific Service Units of IST Austria through resources provided
  by the MIBA Machine Shop and the nanofabrication facility, by the FWF-P 32235 project,
  by the National Key R&D Program of China (2016YFA0301701, 2016YFA0300600), and by
  the European Union’s Horizon 2020 research and innovation program under grant agreement
  no. 862046. All data of this publication are available at 10.15479/AT:ISTA:7689."
article_processing_charge: Yes (via OA deal)
article_type: original
author:
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Lada
  full_name: Vukušić, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukušić
  orcid: 0000-0003-2424-8636
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Fei
  full_name: Gao, Fei
  last_name: Gao
- first_name: Ting
  full_name: Wang, Ting
  last_name: Wang
  orcid: 0000-0002-4619-9575
- first_name: Jian-Jun
  full_name: Zhang, Jian-Jun
  last_name: Zhang
- first_name: Karsten
  full_name: Held, Karsten
  last_name: Held
citation:
  ama: Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole
    states in quantum dots. <i>Nano Letters</i>. 2020;20(7):5201-5206. doi:<a href="https://doi.org/10.1021/acs.nanolett.0c01466">10.1021/acs.nanolett.0c01466</a>
  apa: Katsaros, G., Kukucka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., …
    Held, K. (2020). Zero field splitting of heavy-hole states in quantum dots. <i>Nano
    Letters</i>. American Chemical Society. <a href="https://doi.org/10.1021/acs.nanolett.0c01466">https://doi.org/10.1021/acs.nanolett.0c01466</a>
  chicago: Katsaros, Georgios, Josip Kukucka, Lada Vukušić, Hannes Watzinger, Fei
    Gao, Ting Wang, Jian-Jun Zhang, and Karsten Held. “Zero Field Splitting of Heavy-Hole
    States in Quantum Dots.” <i>Nano Letters</i>. American Chemical Society, 2020.
    <a href="https://doi.org/10.1021/acs.nanolett.0c01466">https://doi.org/10.1021/acs.nanolett.0c01466</a>.
  ieee: G. Katsaros <i>et al.</i>, “Zero field splitting of heavy-hole states in quantum
    dots,” <i>Nano Letters</i>, vol. 20, no. 7. American Chemical Society, pp. 5201–5206,
    2020.
  ista: Katsaros G, Kukucka J, Vukušić L, Watzinger H, Gao F, Wang T, Zhang J-J, Held
    K. 2020. Zero field splitting of heavy-hole states in quantum dots. Nano Letters.
    20(7), 5201–5206.
  mla: Katsaros, Georgios, et al. “Zero Field Splitting of Heavy-Hole States in Quantum
    Dots.” <i>Nano Letters</i>, vol. 20, no. 7, American Chemical Society, 2020, pp.
    5201–06, doi:<a href="https://doi.org/10.1021/acs.nanolett.0c01466">10.1021/acs.nanolett.0c01466</a>.
  short: G. Katsaros, J. Kukucka, L. Vukušić, H. Watzinger, F. Gao, T. Wang, J.-J.
    Zhang, K. Held, Nano Letters 20 (2020) 5201–5206.
date_created: 2020-08-06T09:25:04Z
date_published: 2020-06-01T00:00:00Z
date_updated: 2024-02-21T12:44:01Z
day: '01'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.0c01466
ec_funded: 1
external_id:
  isi:
  - '000548893200066'
  pmid:
  - '32479090'
file:
- access_level: open_access
  content_type: application/pdf
  creator: dernst
  date_created: 2020-08-06T09:35:37Z
  date_updated: 2020-08-06T09:35:37Z
  file_id: '8204'
  file_name: 2020_NanoLetters_Katsaros.pdf
  file_size: 3308906
  relation: main_file
  success: 1
file_date_updated: 2020-08-06T09:35:37Z
has_accepted_license: '1'
intvolume: '        20'
isi: 1
issue: '7'
language:
- iso: eng
month: '06'
oa: 1
oa_version: Published Version
page: 5201-5206
pmid: 1
project:
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
  call_identifier: FWF
  grant_number: P32235
  name: Towards scalable hut wire quantum devices
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
  call_identifier: H2020
  grant_number: '862046'
  name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: Nano Letters
publication_identifier:
  eissn:
  - 1530-6992
  issn:
  - 1530-6984
publication_status: published
publisher: American Chemical Society
quality_controlled: '1'
related_material:
  record:
  - id: '7689'
    relation: research_data
    status: public
scopus_import: '1'
status: public
title: Zero field splitting of heavy-hole states in quantum dots
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 20
year: '2020'
...
---
_id: '7541'
abstract:
- lang: eng
  text: Semiconductor nanowires have been playing a crucial role in the development
    of nanoscale devices for the realization of spin qubits, Majorana fermions, single
    photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled
    nanowires is a prerequisite toward the next generation of devices that will require
    addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up
    self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with
    controllable position, distance, length, and structure is reported. This is achieved
    by a novel growth process that uses a SiGe strain‐relaxation template and can
    be potentially generalized to other material combinations. Transport measurements
    show an electrically tunable spin–orbit coupling, with a spin–orbit length similar
    to that of III–V materials. Also, charge sensing between quantum dots in closely
    spaced wires is observed, which underlines their potential for the realization
    of advanced quantum devices. The reported results open a path toward scalable
    qubit devices using nanowires on silicon.
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: 'This work was supported by the National Key R&D Program of China
  (Grant Nos. 2016YFA0301701 and 2016YFA0300600), the NSFC (Grant Nos. 11574356, 11434010,
  and 11404252), the Strategic Priority Research Program of CAS (Grant No. XDB30000000),
  the ERC Starting Grant No. 335497, the FWF P32235 project, and the European Union''s
  Horizon 2020 research and innovation program under Grant Agreement #862046. This
  research was supported by the Scientific Service Units of IST Austria through resources
  provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks
  support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding
  from Xi''an Jiaotong University.'
article_number: '1906523'
article_processing_charge: Yes (via OA deal)
article_type: original
author:
- first_name: Fei
  full_name: Gao, Fei
  last_name: Gao
- first_name: Jian-Huan
  full_name: Wang, Jian-Huan
  last_name: Wang
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Hao
  full_name: Hu, Hao
  last_name: Hu
- first_name: Marko J.
  full_name: Rančić, Marko J.
  last_name: Rančić
- first_name: Jie-Yin
  full_name: Zhang, Jie-Yin
  last_name: Zhang
- first_name: Ting
  full_name: Wang, Ting
  last_name: Wang
- first_name: Yuan
  full_name: Yao, Yuan
  last_name: Yao
- first_name: Gui-Lei
  full_name: Wang, Gui-Lei
  last_name: Wang
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Lada
  full_name: Vukušić, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukušić
  orcid: 0000-0003-2424-8636
- first_name: Christoph
  full_name: Kloeffel, Christoph
  last_name: Kloeffel
- first_name: Daniel
  full_name: Loss, Daniel
  last_name: Loss
- first_name: Feng
  full_name: Liu, Feng
  last_name: Liu
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Jian-Jun
  full_name: Zhang, Jian-Jun
  last_name: Zhang
citation:
  ama: Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires
    with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. 2020;32(16).
    doi:<a href="https://doi.org/10.1002/adma.201906523">10.1002/adma.201906523</a>
  apa: Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., …
    Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically
    tunable spin-orbit coupling. <i>Advanced Materials</i>. Wiley. <a href="https://doi.org/10.1002/adma.201906523">https://doi.org/10.1002/adma.201906523</a>
  chicago: Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin
    Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically
    Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>. Wiley, 2020. <a href="https://doi.org/10.1002/adma.201906523">https://doi.org/10.1002/adma.201906523</a>.
  ieee: F. Gao <i>et al.</i>, “Site-controlled uniform Ge/Si hut wires with electrically
    tunable spin-orbit coupling,” <i>Advanced Materials</i>, vol. 32, no. 16. Wiley,
    2020.
  ista: Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang
    G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020.
    Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling.
    Advanced Materials. 32(16), 1906523.
  mla: Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically
    Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>, vol. 32, no. 16, 1906523,
    Wiley, 2020, doi:<a href="https://doi.org/10.1002/adma.201906523">10.1002/adma.201906523</a>.
  short: F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang,
    Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros,
    J.-J. Zhang, Advanced Materials 32 (2020).
date_created: 2020-02-28T09:47:00Z
date_published: 2020-04-23T00:00:00Z
date_updated: 2024-02-21T12:42:12Z
day: '23'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1002/adma.201906523
ec_funded: 1
external_id:
  isi:
  - '000516660900001'
file:
- access_level: open_access
  checksum: c622737dc295972065782558337124a2
  content_type: application/pdf
  creator: dernst
  date_created: 2020-11-20T10:11:35Z
  date_updated: 2020-11-20T10:11:35Z
  file_id: '8782'
  file_name: 2020_AdvancedMaterials_Gao.pdf
  file_size: 5242880
  relation: main_file
  success: 1
file_date_updated: 2020-11-20T10:11:35Z
has_accepted_license: '1'
intvolume: '        32'
isi: 1
issue: '16'
language:
- iso: eng
month: '04'
oa: 1
oa_version: Published Version
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
  call_identifier: FP7
  grant_number: '335497'
  name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
  call_identifier: FWF
  grant_number: P32235
  name: Towards scalable hut wire quantum devices
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
  call_identifier: H2020
  grant_number: '862046'
  name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: Advanced Materials
publication_identifier:
  issn:
  - 0935-9648
publication_status: published
publisher: Wiley
quality_controlled: '1'
related_material:
  record:
  - id: '7996'
    relation: dissertation_contains
    status: public
  - id: '9222'
    relation: research_data
    status: public
scopus_import: '1'
status: public
title: Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit
  coupling
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 32
year: '2020'
...
---
_id: '23'
abstract:
- lang: eng
  text: The strong atomistic spin–orbit coupling of holes makes single-shot spin readout
    measurements difficult because it reduces the spin lifetimes. By integrating the
    charge sensor into a high bandwidth radio frequency reflectometry setup, we were
    able to demonstrate single-shot readout of a germanium quantum dot hole spin and
    measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT
    are reported, with a total readout visibility of about 70%. By analyzing separately
    the spin-to-charge conversion and charge readout fidelities, we have obtained
    insight into the processes limiting the visibilities of hole spins. The analyses
    suggest that high hole visibilities are feasible at realistic experimental conditions,
    underlying the potential of hole spins for the realization of viable qubit devices.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
article_processing_charge: No
author:
- first_name: Lada
  full_name: Vukušić, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukušić
  orcid: 0000-0003-2424-8636
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Joshua M
  full_name: Milem, Joshua M
  id: 4CDE0A96-F248-11E8-B48F-1D18A9856A87
  last_name: Milem
- first_name: Friedrich
  full_name: Schäffler, Friedrich
  last_name: Schäffler
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
citation:
  ama: Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot
    readout of hole spins in Ge. <i>Nano Letters</i>. 2018;18(11):7141-7145. doi:<a
    href="https://doi.org/10.1021/acs.nanolett.8b03217">10.1021/acs.nanolett.8b03217</a>
  apa: Vukušić, L., Kukucka, J., Watzinger, H., Milem, J. M., Schäffler, F., &#38;
    Katsaros, G. (2018). Single-shot readout of hole spins in Ge. <i>Nano Letters</i>.
    American Chemical Society. <a href="https://doi.org/10.1021/acs.nanolett.8b03217">https://doi.org/10.1021/acs.nanolett.8b03217</a>
  chicago: Vukušić, Lada, Josip Kukucka, Hannes Watzinger, Joshua M Milem, Friedrich
    Schäffler, and Georgios Katsaros. “Single-Shot Readout of Hole Spins in Ge.” <i>Nano
    Letters</i>. American Chemical Society, 2018. <a href="https://doi.org/10.1021/acs.nanolett.8b03217">https://doi.org/10.1021/acs.nanolett.8b03217</a>.
  ieee: L. Vukušić, J. Kukucka, H. Watzinger, J. M. Milem, F. Schäffler, and G. Katsaros,
    “Single-shot readout of hole spins in Ge,” <i>Nano Letters</i>, vol. 18, no. 11.
    American Chemical Society, pp. 7141–7145, 2018.
  ista: Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. 2018.
    Single-shot readout of hole spins in Ge. Nano Letters. 18(11), 7141–7145.
  mla: Vukušić, Lada, et al. “Single-Shot Readout of Hole Spins in Ge.” <i>Nano Letters</i>,
    vol. 18, no. 11, American Chemical Society, 2018, pp. 7141–45, doi:<a href="https://doi.org/10.1021/acs.nanolett.8b03217">10.1021/acs.nanolett.8b03217</a>.
  short: L. Vukušić, J. Kukucka, H. Watzinger, J.M. Milem, F. Schäffler, G. Katsaros,
    Nano Letters 18 (2018) 7141–7145.
date_created: 2018-12-11T11:44:13Z
date_published: 2018-10-25T00:00:00Z
date_updated: 2023-09-18T09:30:37Z
day: '25'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.8b03217
ec_funded: 1
external_id:
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  pmid:
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issue: '11'
language:
- iso: eng
month: '10'
oa: 1
oa_version: Published Version
page: 7141 - 7145
pmid: 1
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
  call_identifier: FP7
  grant_number: '335497'
  name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: Nano Letters
publication_identifier:
  issn:
  - '15306984'
publication_status: published
publisher: American Chemical Society
publist_id: '8032'
pubrep_id: '1065'
quality_controlled: '1'
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  - id: '7977'
    relation: popular_science
  - id: '69'
    relation: dissertation_contains
    status: public
  - id: '7996'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: Single-shot readout of hole spins in Ge
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 18
year: '2018'
...
---
_id: '77'
abstract:
- lang: eng
  text: Holes confined in quantum dots have gained considerable interest in the past
    few years due to their potential as spin qubits. Here we demonstrate two-axis
    control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double
    quantum dot device. The Pauli spin blockade principle allowed us to demonstrate
    electric dipole spin resonance by applying a radio frequency electric field to
    one of the electrodes defining the double quantum dot. Coherent hole spin oscillations
    with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of
    130 ns are measured. The reported results emphasize the potential of Ge as a platform
    for fast and electrically tunable hole spin qubit devices.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
article_processing_charge: Yes
article_type: original
author:
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Lada
  full_name: Vukusic, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukusic
  orcid: 0000-0003-2424-8636
- first_name: Fei
  full_name: Gao, Fei
  last_name: Gao
- first_name: Ting
  full_name: Wang, Ting
  last_name: Wang
- first_name: Friedrich
  full_name: Schäffler, Friedrich
  last_name: Schäffler
- first_name: Jian
  full_name: Zhang, Jian
  last_name: Zhang
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
citation:
  ama: Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. <i>Nature
    Communications</i>. 2018;9(3902). doi:<a href="https://doi.org/10.1038/s41467-018-06418-4">10.1038/s41467-018-06418-4</a>
  apa: Watzinger, H., Kukucka, J., Vukušić, L., Gao, F., Wang, T., Schäffler, F.,
    … Katsaros, G. (2018). A germanium hole spin qubit. <i>Nature Communications</i>.
    Nature Publishing Group. <a href="https://doi.org/10.1038/s41467-018-06418-4">https://doi.org/10.1038/s41467-018-06418-4</a>
  chicago: Watzinger, Hannes, Josip Kukucka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich
    Schäffler, Jian Zhang, and Georgios Katsaros. “A Germanium Hole Spin Qubit.” <i>Nature
    Communications</i>. Nature Publishing Group, 2018. <a href="https://doi.org/10.1038/s41467-018-06418-4">https://doi.org/10.1038/s41467-018-06418-4</a>.
  ieee: H. Watzinger <i>et al.</i>, “A germanium hole spin qubit,” <i>Nature Communications</i>,
    vol. 9, no. 3902. Nature Publishing Group, 2018.
  ista: Watzinger H, Kukucka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J, Katsaros
    G. 2018. A germanium hole spin qubit. Nature Communications. 9(3902).
  mla: Watzinger, Hannes, et al. “A Germanium Hole Spin Qubit.” <i>Nature Communications</i>,
    vol. 9, no. 3902, Nature Publishing Group, 2018, doi:<a href="https://doi.org/10.1038/s41467-018-06418-4">10.1038/s41467-018-06418-4</a>.
  short: H. Watzinger, J. Kukucka, L. Vukušić, F. Gao, T. Wang, F. Schäffler, J. Zhang,
    G. Katsaros, Nature Communications 9 (2018).
date_created: 2018-12-11T11:44:30Z
date_published: 2018-09-25T00:00:00Z
date_updated: 2023-09-08T11:44:02Z
day: '25'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1038/s41467-018-06418-4
ec_funded: 1
external_id:
  isi:
  - '000445560800010'
file:
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  checksum: e7148c10a64497e279c4de570b6cc544
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  date_updated: 2020-07-14T12:48:02Z
  file_id: '5687'
  file_name: 2018_NatureComm_Watzinger.pdf
  file_size: 1063469
  relation: main_file
file_date_updated: 2020-07-14T12:48:02Z
has_accepted_license: '1'
intvolume: '         9'
isi: 1
issue: '3902 '
language:
- iso: eng
month: '09'
oa: 1
oa_version: Published Version
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
  call_identifier: FP7
  grant_number: '335497'
  name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
- _id: 2552F888-B435-11E9-9278-68D0E5697425
  call_identifier: FWF
  grant_number: Y00715
  name: Loch Spin-Qubits und Majorana-Fermionen in Germanium
publication: Nature Communications
publication_status: published
publisher: Nature Publishing Group
quality_controlled: '1'
related_material:
  record:
  - id: '7977'
    relation: popular_science
  - id: '7996'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: A germanium hole spin qubit
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 9
year: '2018'
...
---
_id: '49'
abstract:
- lang: eng
  text: Nowadays, quantum computation is receiving more and more attention as an alternative
    to the classical way of computing. For realizing a quantum computer, different
    devices are investigated as potential quantum bits. In this thesis, the focus
    is on Ge hut wires, which turned out to be promising candidates for implementing
    hole spin quantum bits. The advantages of Ge as a material system are the low
    hyperfine interaction for holes and the strong spin orbit coupling, as well as
    the compatibility with the highly developed CMOS processes in industry. In addition,
    Ge can also be isotopically purified which is expected to boost the spin coherence
    times. The strong spin orbit interaction for holes in Ge on the one hand enables
    the full electrical control of the quantum bit and on the other hand should allow
    short spin manipulation times. Starting with a bare Si wafer, this work covers
    the entire process reaching from growth over the fabrication and characterization
    of hut wire devices up to the demonstration of hole spin resonance. From experiments
    with single quantum dots, a large g-factor anisotropy between the in-plane and
    the out-of-plane direction was found. A comparison to a theoretical model unveiled
    the heavy-hole character of the lowest energy states. The second part of the thesis
    addresses double quantum dot devices, which were realized by adding two gate electrodes
    to a hut wire. In such devices, Pauli spin blockade was observed, which can serve
    as a read-out mechanism for spin quantum bits. Applying oscillating electric fields
    in spin blockade allowed the demonstration of continuous spin rotations and the
    extraction of a lower bound for the spin dephasing time. Despite the strong spin
    orbit coupling in Ge, the obtained value for the dephasing time is comparable
    to what has been recently reported for holes in Si. All in all, the presented
    results point out the high potential of Ge hut wires as a platform for long-lived,
    fast and fully electrically tunable hole spin quantum bits.
alternative_title:
- ISTA Thesis
article_processing_charge: No
author:
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
citation:
  ama: Watzinger H. Ge hut wires - from growth to hole spin resonance. 2018. doi:<a
    href="https://doi.org/10.15479/AT:ISTA:th_1033">10.15479/AT:ISTA:th_1033</a>
  apa: Watzinger, H. (2018). <i>Ge hut wires - from growth to hole spin resonance</i>.
    Institute of Science and Technology Austria. <a href="https://doi.org/10.15479/AT:ISTA:th_1033">https://doi.org/10.15479/AT:ISTA:th_1033</a>
  chicago: Watzinger, Hannes. “Ge Hut Wires - from Growth to Hole Spin Resonance.”
    Institute of Science and Technology Austria, 2018. <a href="https://doi.org/10.15479/AT:ISTA:th_1033">https://doi.org/10.15479/AT:ISTA:th_1033</a>.
  ieee: H. Watzinger, “Ge hut wires - from growth to hole spin resonance,” Institute
    of Science and Technology Austria, 2018.
  ista: Watzinger H. 2018. Ge hut wires - from growth to hole spin resonance. Institute
    of Science and Technology Austria.
  mla: Watzinger, Hannes. <i>Ge Hut Wires - from Growth to Hole Spin Resonance</i>.
    Institute of Science and Technology Austria, 2018, doi:<a href="https://doi.org/10.15479/AT:ISTA:th_1033">10.15479/AT:ISTA:th_1033</a>.
  short: H. Watzinger, Ge Hut Wires - from Growth to Hole Spin Resonance, Institute
    of Science and Technology Austria, 2018.
date_created: 2018-12-11T11:44:21Z
date_published: 2018-07-30T00:00:00Z
date_updated: 2023-09-07T12:27:43Z
day: '30'
ddc:
- '530'
degree_awarded: PhD
department:
- _id: GeKa
doi: 10.15479/AT:ISTA:th_1033
file:
- access_level: open_access
  checksum: b653b5216251f938ddbeafd1de88667c
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  date_updated: 2020-07-14T12:46:35Z
  file_id: '6249'
  file_name: 2018_Thesis_Watzinger.pdf
  file_size: 85539748
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  checksum: 39bcf8de7ac5b1bb516b11ce2f966785
  content_type: application/zip
  creator: dernst
  date_created: 2019-04-09T07:13:27Z
  date_updated: 2020-07-14T12:46:35Z
  file_id: '6250'
  file_name: 2018_Thesis_Watzinger_source.zip
  file_size: 21830697
  relation: source_file
file_date_updated: 2020-07-14T12:46:35Z
has_accepted_license: '1'
language:
- iso: eng
month: '07'
oa: 1
oa_version: Published Version
page: '77'
publication_identifier:
  issn:
  - 2663-337X
publication_status: published
publisher: Institute of Science and Technology Austria
publist_id: '8005'
pubrep_id: '1033'
status: public
supervisor:
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
title: Ge hut wires - from growth to hole spin resonance
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: dissertation
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
year: '2018'
...
---
_id: '840'
abstract:
- lang: eng
  text: Heavy holes confined in quantum dots are predicted to be promising candidates
    for the realization of spin qubits with long coherence times. Here we focus on
    such heavy-hole states confined in germanium hut wires. By tuning the growth density
    of the latter we can realize a T-like structure between two neighboring wires.
    Such a structure allows the realization of a charge sensor, which is electrostatically
    and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3
    e. By integrating the T-like structure into a radiofrequency reflectometry setup,
    single-shot measurements allowing the extraction of hole tunneling times are performed.
    The extracted tunneling times of less than 10 μs are attributed to the small effective
    mass of Ge heavy-hole states and pave the way toward projective spin readout measurements.
acknowledged_ssus:
- _id: M-Shop
article_processing_charge: No
author:
- first_name: Lada
  full_name: Vukusic, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukusic
  orcid: 0000-0003-2424-8636
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
citation:
  ama: Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in
    germanium hut wires probed by single-shot reflectometry. <i>Nano Letters</i>.
    2017;17(9):5706-5710. doi:<a href="https://doi.org/10.1021/acs.nanolett.7b02627">10.1021/acs.nanolett.7b02627</a>
  apa: Vukušić, L., Kukucka, J., Watzinger, H., &#38; Katsaros, G. (2017). Fast hole
    tunneling times in germanium hut wires probed by single-shot reflectometry. <i>Nano
    Letters</i>. American Chemical Society. <a href="https://doi.org/10.1021/acs.nanolett.7b02627">https://doi.org/10.1021/acs.nanolett.7b02627</a>
  chicago: Vukušić, Lada, Josip Kukucka, Hannes Watzinger, and Georgios Katsaros.
    “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.”
    <i>Nano Letters</i>. American Chemical Society, 2017. <a href="https://doi.org/10.1021/acs.nanolett.7b02627">https://doi.org/10.1021/acs.nanolett.7b02627</a>.
  ieee: L. Vukušić, J. Kukucka, H. Watzinger, and G. Katsaros, “Fast hole tunneling
    times in germanium hut wires probed by single-shot reflectometry,” <i>Nano Letters</i>,
    vol. 17, no. 9. American Chemical Society, pp. 5706–5710, 2017.
  ista: Vukušić L, Kukucka J, Watzinger H, Katsaros G. 2017. Fast hole tunneling times
    in germanium hut wires probed by single-shot reflectometry. Nano Letters. 17(9),
    5706–5710.
  mla: Vukušić, Lada, et al. “Fast Hole Tunneling Times in Germanium Hut Wires Probed
    by Single-Shot Reflectometry.” <i>Nano Letters</i>, vol. 17, no. 9, American Chemical
    Society, 2017, pp. 5706–10, doi:<a href="https://doi.org/10.1021/acs.nanolett.7b02627">10.1021/acs.nanolett.7b02627</a>.
  short: L. Vukušić, J. Kukucka, H. Watzinger, G. Katsaros, Nano Letters 17 (2017)
    5706–5710.
date_created: 2018-12-11T11:48:47Z
date_published: 2017-08-10T00:00:00Z
date_updated: 2023-09-26T15:50:22Z
day: '10'
ddc:
- '539'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.7b02627
ec_funded: 1
external_id:
  isi:
  - '000411043500078'
file:
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  checksum: 761371a0129b2aa442424b9561450ece
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  date_updated: 2020-07-14T12:48:13Z
  file_id: '4951'
  file_name: IST-2017-865-v1+1_acs.nanolett.7b02627.pdf
  file_size: 2449546
  relation: main_file
file_date_updated: 2020-07-14T12:48:13Z
has_accepted_license: '1'
intvolume: '        17'
isi: 1
issue: '9'
language:
- iso: eng
month: '08'
oa: 1
oa_version: Published Version
page: 5706 - 5710
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
  call_identifier: FP7
  grant_number: '335497'
  name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: Nano Letters
publication_identifier:
  issn:
  - '15306984'
publication_status: published
publisher: American Chemical Society
publist_id: '6808'
pubrep_id: '865'
quality_controlled: '1'
related_material:
  record:
  - id: '7977'
    relation: popular_science
  - id: '69'
    relation: dissertation_contains
    status: public
  - id: '7996'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 17
year: '2017'
...
---
_id: '1328'
abstract:
- lang: eng
  text: Hole spins have gained considerable interest in the past few years due to
    their potential for fast electrically controlled qubits. Here, we study holes
    confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature
    magnetotransport measurements reveal a large anisotropy between the in-plane and
    out-of-plane g-factors of up to 18. Numerical simulations verify that this large
    anisotropy originates from a confined wave function of heavy-hole character. A
    light-hole admixture of less than 1% is estimated for the states of lowest energy,
    leading to a surprisingly large reduction of the out-of-plane g-factors compared
    with those for pure heavy holes. Given this tiny light-hole contribution, the
    spin lifetimes are expected to be very long, even in isotopically nonpurified
    samples.
acknowledgement: 'The work was supported by the EC FP7 ICT project SiSPIN no. 323841,
  the EC FP7 ICT project PAMS no. 610446, the ERC Starting Grant no. 335497, the FWF-I-1190-N20
  project, and the Swiss NSF. We acknowledge F. Schäffler for fruitful discussions
  related to the hut wire growth and for giving us access to the molecular beam epitaxy
  system, M. Schatzl for her support in electron beam lithography, and V. Jadris ̌ko
  for helping us with the COMSOL simulations. Finally, we thank G. Bauer for his continuous
  support. '
author:
- first_name: Hannes
  full_name: Watzinger, Hannes
  id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
  last_name: Watzinger
- first_name: Christoph
  full_name: Kloeffel, Christoph
  last_name: Kloeffel
- first_name: Lada
  full_name: Vukusic, Lada
  id: 31E9F056-F248-11E8-B48F-1D18A9856A87
  last_name: Vukusic
  orcid: 0000-0003-2424-8636
- first_name: Marta
  full_name: Rossell, Marta
  last_name: Rossell
- first_name: Violetta
  full_name: Sessi, Violetta
  last_name: Sessi
- first_name: Josip
  full_name: Kukucka, Josip
  id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
  last_name: Kukucka
- first_name: Raimund
  full_name: Kirchschlager, Raimund
  last_name: Kirchschlager
- first_name: Elisabeth
  full_name: Lausecker, Elisabeth
  id: 33662F76-F248-11E8-B48F-1D18A9856A87
  last_name: Lausecker
- first_name: Alisha
  full_name: Truhlar, Alisha
  id: 49CBC780-F248-11E8-B48F-1D18A9856A87
  last_name: Truhlar
- first_name: Martin
  full_name: Glaser, Martin
  last_name: Glaser
- first_name: Armando
  full_name: Rastelli, Armando
  last_name: Rastelli
- first_name: Andreas
  full_name: Fuhrer, Andreas
  last_name: Fuhrer
- first_name: Daniel
  full_name: Loss, Daniel
  last_name: Loss
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
citation:
  ama: Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut
    wires. <i>Nano Letters</i>. 2016;16(11):6879-6885. doi:<a href="https://doi.org/10.1021/acs.nanolett.6b02715">10.1021/acs.nanolett.6b02715</a>
  apa: Watzinger, H., Kloeffel, C., Vukušić, L., Rossell, M., Sessi, V., Kukucka,
    J., … Katsaros, G. (2016). Heavy-hole states in germanium hut wires. <i>Nano Letters</i>.
    American Chemical Society. <a href="https://doi.org/10.1021/acs.nanolett.6b02715">https://doi.org/10.1021/acs.nanolett.6b02715</a>
  chicago: Watzinger, Hannes, Christoph Kloeffel, Lada Vukušić, Marta Rossell, Violetta
    Sessi, Josip Kukucka, Raimund Kirchschlager, et al. “Heavy-Hole States in Germanium
    Hut Wires.” <i>Nano Letters</i>. American Chemical Society, 2016. <a href="https://doi.org/10.1021/acs.nanolett.6b02715">https://doi.org/10.1021/acs.nanolett.6b02715</a>.
  ieee: H. Watzinger <i>et al.</i>, “Heavy-hole states in germanium hut wires,” <i>Nano
    Letters</i>, vol. 16, no. 11. American Chemical Society, pp. 6879–6885, 2016.
  ista: Watzinger H, Kloeffel C, Vukušić L, Rossell M, Sessi V, Kukucka J, Kirchschlager
    R, Lausecker E, Truhlar A, Glaser M, Rastelli A, Fuhrer A, Loss D, Katsaros G.
    2016. Heavy-hole states in germanium hut wires. Nano Letters. 16(11), 6879–6885.
  mla: Watzinger, Hannes, et al. “Heavy-Hole States in Germanium Hut Wires.” <i>Nano
    Letters</i>, vol. 16, no. 11, American Chemical Society, 2016, pp. 6879–85, doi:<a
    href="https://doi.org/10.1021/acs.nanolett.6b02715">10.1021/acs.nanolett.6b02715</a>.
  short: H. Watzinger, C. Kloeffel, L. Vukušić, M. Rossell, V. Sessi, J. Kukucka,
    R. Kirchschlager, E. Lausecker, A. Truhlar, M. Glaser, A. Rastelli, A. Fuhrer,
    D. Loss, G. Katsaros, Nano Letters 16 (2016) 6879–6885.
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