[{"external_id":{"isi":["000675595800006"]},"title":"Ge/Si quantum wires for quantum computing","publication":"2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021","project":[{"grant_number":"335497","call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425"}],"citation":{"chicago":"Gao, Fei, Jie Yin Zhang, Jian Huan Wang, Ming Ming, Tina Wang, Jian Jun Zhang, Hannes Watzinger, et al. “Ge/Si Quantum Wires for Quantum Computing.” In <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>. IEEE, 2021. <a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">https://doi.org/10.1109/EDTM50988.2021.9420817</a>.","ieee":"F. Gao <i>et al.</i>, “Ge/Si quantum wires for quantum computing,” in <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>, Virtual, Online, 2021.","mla":"Gao, Fei, et al. “Ge/Si Quantum Wires for Quantum Computing.” <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>, 9420817, IEEE, 2021, doi:<a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">10.1109/EDTM50988.2021.9420817</a>.","short":"F. Gao, J.Y. Zhang, J.H. Wang, M. Ming, T. Wang, J.J. Zhang, H. Watzinger, J. Kukucka, L. Vukušić, G. Katsaros, K. Wang, G. Xu, H.O. Li, G.P. Guo, in:, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, IEEE, 2021.","apa":"Gao, F., Zhang, J. Y., Wang, J. H., Ming, M., Wang, T., Zhang, J. J., … Guo, G. P. (2021). Ge/Si quantum wires for quantum computing. In <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>. Virtual, Online: IEEE. <a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">https://doi.org/10.1109/EDTM50988.2021.9420817</a>","ista":"Gao F, Zhang JY, Wang JH, Ming M, Wang T, Zhang JJ, Watzinger H, Kukucka J, Vukušić L, Katsaros G, Wang K, Xu G, Li HO, Guo GP. 2021. Ge/Si quantum wires for quantum computing. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. EDTM: IEEE Electron Devices Technology and Manufacturing Conference, 9420817.","ama":"Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>. IEEE; 2021. doi:<a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">10.1109/EDTM50988.2021.9420817</a>"},"scopus_import":"1","ec_funded":1,"abstract":[{"text":"We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum wires.","lang":"eng"}],"oa_version":"None","publication_status":"published","day":"08","date_updated":"2023-10-03T12:51:59Z","status":"public","quality_controlled":"1","publication_identifier":{"isbn":["9781728181769"]},"month":"04","isi":1,"acknowledgement":"This work was supported by the National Key R&D Program of China (Grant No. 2016YFA0301700) and the ERC Starting Grant no. 335497.","department":[{"_id":"GeKa"}],"date_created":"2021-06-06T22:01:29Z","article_number":"9420817","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","article_processing_charge":"No","conference":{"end_date":"2021-04-11","start_date":"2021-04-08","name":"EDTM: IEEE Electron Devices Technology and Manufacturing Conference","location":"Virtual, Online"},"_id":"9464","author":[{"last_name":"Gao","full_name":"Gao, Fei","first_name":"Fei"},{"first_name":"Jie Yin","full_name":"Zhang, Jie Yin","last_name":"Zhang"},{"first_name":"Jian Huan","full_name":"Wang, Jian Huan","last_name":"Wang"},{"last_name":"Ming","first_name":"Ming","full_name":"Ming, Ming"},{"last_name":"Wang","full_name":"Wang, Tina","first_name":"Tina"},{"last_name":"Zhang","full_name":"Zhang, Jian Jun","first_name":"Jian Jun"},{"id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"first_name":"Josip","full_name":"Kukucka, Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka"},{"full_name":"Vukušić, Lada","first_name":"Lada","orcid":"0000-0003-2424-8636","last_name":"Vukušić","id":"31E9F056-F248-11E8-B48F-1D18A9856A87"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios","first_name":"Georgios"},{"full_name":"Wang, Ke","first_name":"Ke","last_name":"Wang"},{"first_name":"Gang","full_name":"Xu, Gang","last_name":"Xu"},{"last_name":"Li","first_name":"Hai Ou","full_name":"Li, Hai Ou"},{"full_name":"Guo, Guo Ping","first_name":"Guo Ping","last_name":"Guo"}],"date_published":"2021-04-08T00:00:00Z","publisher":"IEEE","year":"2021","language":[{"iso":"eng"}],"doi":"10.1109/EDTM50988.2021.9420817","type":"conference"},{"has_accepted_license":"1","issue":"7","scopus_import":"1","project":[{"name":"Towards scalable hut wire quantum devices","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E","grant_number":"P32235","call_identifier":"FWF"},{"_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","call_identifier":"H2020","grant_number":"862046"}],"citation":{"ieee":"G. Katsaros <i>et al.</i>, “Zero field splitting of heavy-hole states in quantum dots,” <i>Nano Letters</i>, vol. 20, no. 7. American Chemical Society, pp. 5201–5206, 2020.","chicago":"Katsaros, Georgios, Josip Kukucka, Lada Vukušić, Hannes Watzinger, Fei Gao, Ting Wang, Jian-Jun Zhang, and Karsten Held. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” <i>Nano Letters</i>. American Chemical Society, 2020. <a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">https://doi.org/10.1021/acs.nanolett.0c01466</a>.","ama":"Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole states in quantum dots. <i>Nano Letters</i>. 2020;20(7):5201-5206. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">10.1021/acs.nanolett.0c01466</a>","apa":"Katsaros, G., Kukucka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., … Held, K. (2020). Zero field splitting of heavy-hole states in quantum dots. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">https://doi.org/10.1021/acs.nanolett.0c01466</a>","ista":"Katsaros G, Kukucka J, Vukušić L, Watzinger H, Gao F, Wang T, Zhang J-J, Held K. 2020. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 20(7), 5201–5206.","mla":"Katsaros, Georgios, et al. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” <i>Nano Letters</i>, vol. 20, no. 7, American Chemical Society, 2020, pp. 5201–06, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.0c01466\">10.1021/acs.nanolett.0c01466</a>.","short":"G. Katsaros, J. Kukucka, L. Vukušić, H. Watzinger, F. Gao, T. Wang, J.-J. Zhang, K. Held, Nano Letters 20 (2020) 5201–5206."},"related_material":{"record":[{"id":"7689","status":"public","relation":"research_data"}]},"external_id":{"isi":["000548893200066"],"pmid":["32479090"]},"title":"Zero field splitting of heavy-hole states in quantum dots","file":[{"file_name":"2020_NanoLetters_Katsaros.pdf","file_size":3308906,"file_id":"8204","date_created":"2020-08-06T09:35:37Z","success":1,"date_updated":"2020-08-06T09:35:37Z","creator":"dernst","access_level":"open_access","content_type":"application/pdf","relation":"main_file"}],"publication":"Nano Letters","acknowledged_ssus":[{"_id":"NanoFab"},{"_id":"M-Shop"}],"status":"public","date_updated":"2024-02-21T12:44:01Z","ec_funded":1,"abstract":[{"lang":"eng","text":"Using inelastic cotunneling spectroscopy we observe a zero field splitting within the spin triplet manifold of Ge hut wire quantum dots. The states with spin ±1 in the confinement direction are energetically favored by up to 55 μeV compared to the spin 0 triplet state because of the strong spin–orbit coupling. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and might need to be considered when operating hole spin qubits."}],"oa_version":"Published Version","page":"5201-5206","publication_status":"published","day":"01","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"intvolume":"        20","ddc":["530"],"article_processing_charge":"Yes (via OA deal)","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","file_date_updated":"2020-08-06T09:35:37Z","pmid":1,"department":[{"_id":"GeKa"}],"acknowledgement":"We acknowledge G. Burkard, V. N. Golovach, C. Kloeffel, D.Loss, P. Rabl, and M. Rancič ́ for helpful discussions. We\r\nfurther acknowledge T. Adletzberger, J. Aguilera, T. Asenov, S. Bagiante, T. Menner, L. Shafeek, P. Taus, P. Traunmüller, and D. Waldhausl for their invaluable assistance. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, by the FWF-P 32235 project, by the National Key R&D Program of China (2016YFA0301701, 2016YFA0300600), and by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 862046. All data of this publication are available at 10.15479/AT:ISTA:7689.","date_created":"2020-08-06T09:25:04Z","volume":20,"article_type":"original","isi":1,"quality_controlled":"1","publication_identifier":{"eissn":["1530-6992"],"issn":["1530-6984"]},"month":"06","type":"journal_article","publisher":"American Chemical Society","year":"2020","language":[{"iso":"eng"}],"doi":"10.1021/acs.nanolett.0c01466","date_published":"2020-06-01T00:00:00Z","oa":1,"_id":"8203","author":[{"first_name":"Georgios","full_name":"Katsaros, Georgios","orcid":"0000-0001-8342-202X","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87"},{"id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","full_name":"Kukucka, Josip","first_name":"Josip"},{"last_name":"Vukušić","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636","first_name":"Lada","full_name":"Vukušić, Lada"},{"first_name":"Hannes","full_name":"Watzinger, Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger"},{"full_name":"Gao, Fei","first_name":"Fei","last_name":"Gao"},{"first_name":"Ting","full_name":"Wang, Ting","orcid":"0000-0002-4619-9575","last_name":"Wang"},{"full_name":"Zhang, Jian-Jun","first_name":"Jian-Jun","last_name":"Zhang"},{"first_name":"Karsten","full_name":"Held, Karsten","last_name":"Held"}]},{"date_published":"2020-04-23T00:00:00Z","oa":1,"_id":"7541","author":[{"full_name":"Gao, Fei","first_name":"Fei","last_name":"Gao"},{"full_name":"Wang, Jian-Huan","first_name":"Jian-Huan","last_name":"Wang"},{"last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","full_name":"Watzinger, Hannes","first_name":"Hannes"},{"last_name":"Hu","full_name":"Hu, Hao","first_name":"Hao"},{"full_name":"Rančić, Marko J.","first_name":"Marko J.","last_name":"Rančić"},{"last_name":"Zhang","first_name":"Jie-Yin","full_name":"Zhang, Jie-Yin"},{"last_name":"Wang","full_name":"Wang, Ting","first_name":"Ting"},{"full_name":"Yao, Yuan","first_name":"Yuan","last_name":"Yao"},{"last_name":"Wang","full_name":"Wang, Gui-Lei","first_name":"Gui-Lei"},{"id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","first_name":"Josip","full_name":"Kukucka, Josip"},{"id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukušić","orcid":"0000-0003-2424-8636","full_name":"Vukušić, Lada","first_name":"Lada"},{"full_name":"Kloeffel, Christoph","first_name":"Christoph","last_name":"Kloeffel"},{"last_name":"Loss","first_name":"Daniel","full_name":"Loss, Daniel"},{"last_name":"Liu","full_name":"Liu, Feng","first_name":"Feng"},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","full_name":"Katsaros, Georgios","first_name":"Georgios"},{"full_name":"Zhang, Jian-Jun","first_name":"Jian-Jun","last_name":"Zhang"}],"type":"journal_article","publisher":"Wiley","year":"2020","language":[{"iso":"eng"}],"doi":"10.1002/adma.201906523","article_type":"original","volume":32,"isi":1,"quality_controlled":"1","publication_identifier":{"issn":["0935-9648"]},"month":"04","intvolume":"        32","article_processing_charge":"Yes (via OA deal)","ddc":["530"],"user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","file_date_updated":"2020-11-20T10:11:35Z","acknowledgement":"This work was supported by the National Key R&D Program of China (Grant Nos. 2016YFA0301701 and 2016YFA0300600), the NSFC (Grant Nos. 11574356, 11434010, and 11404252), the Strategic Priority Research Program of CAS (Grant No. XDB30000000), the ERC Starting Grant No. 335497, the FWF P32235 project, and the European Union's Horizon 2020 research and innovation program under Grant Agreement #862046. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding from Xi'an Jiaotong University.","department":[{"_id":"GeKa"}],"date_created":"2020-02-28T09:47:00Z","article_number":"1906523","ec_funded":1,"abstract":[{"lang":"eng","text":"Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon."}],"oa_version":"Published Version","publication_status":"published","day":"23","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"acknowledged_ssus":[{"_id":"NanoFab"},{"_id":"M-Shop"}],"status":"public","date_updated":"2024-02-21T12:42:12Z","external_id":{"isi":["000516660900001"]},"related_material":{"record":[{"status":"public","id":"7996","relation":"dissertation_contains"},{"status":"public","id":"9222","relation":"research_data"}]},"title":"Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling","file":[{"content_type":"application/pdf","relation":"main_file","access_level":"open_access","creator":"dernst","success":1,"date_updated":"2020-11-20T10:11:35Z","date_created":"2020-11-20T10:11:35Z","checksum":"c622737dc295972065782558337124a2","file_id":"8782","file_size":5242880,"file_name":"2020_AdvancedMaterials_Gao.pdf"}],"publication":"Advanced Materials","has_accepted_license":"1","issue":"16","scopus_import":"1","project":[{"grant_number":"335497","call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425"},{"name":"Towards scalable hut wire quantum devices","_id":"237B3DA4-32DE-11EA-91FC-C7463DDC885E","grant_number":"P32235","call_identifier":"FWF"},{"_id":"237E5020-32DE-11EA-91FC-C7463DDC885E","name":"TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS","call_identifier":"H2020","grant_number":"862046"}],"citation":{"mla":"Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>, vol. 32, no. 16, 1906523, Wiley, 2020, doi:<a href=\"https://doi.org/10.1002/adma.201906523\">10.1002/adma.201906523</a>.","ista":"Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 32(16), 1906523.","apa":"Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., … Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. Wiley. <a href=\"https://doi.org/10.1002/adma.201906523\">https://doi.org/10.1002/adma.201906523</a>","short":"F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang, Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J.-J. Zhang, Advanced Materials 32 (2020).","ama":"Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. <i>Advanced Materials</i>. 2020;32(16). doi:<a href=\"https://doi.org/10.1002/adma.201906523\">10.1002/adma.201906523</a>","chicago":"Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” <i>Advanced Materials</i>. Wiley, 2020. <a href=\"https://doi.org/10.1002/adma.201906523\">https://doi.org/10.1002/adma.201906523</a>.","ieee":"F. Gao <i>et al.</i>, “Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling,” <i>Advanced Materials</i>, vol. 32, no. 16. Wiley, 2020."}},{"department":[{"_id":"GeKa"}],"pmid":1,"date_created":"2018-12-11T11:44:13Z","intvolume":"        18","file_date_updated":"2020-07-14T12:45:37Z","ddc":["530"],"article_processing_charge":"No","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","publication_identifier":{"issn":["15306984"]},"publist_id":"8032","quality_controlled":"1","month":"10","volume":18,"isi":1,"year":"2018","publisher":"American Chemical Society","doi":"10.1021/acs.nanolett.8b03217","language":[{"iso":"eng"}],"type":"journal_article","_id":"23","oa":1,"author":[{"last_name":"Vukušić","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0003-2424-8636","first_name":"Lada","full_name":"Vukušić, Lada"},{"full_name":"Kukucka, Josip","first_name":"Josip","last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87"},{"id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"id":"4CDE0A96-F248-11E8-B48F-1D18A9856A87","last_name":"Milem","full_name":"Milem, Joshua M","first_name":"Joshua M"},{"last_name":"Schäffler","first_name":"Friedrich","full_name":"Schäffler, Friedrich"},{"last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","full_name":"Katsaros, Georgios","first_name":"Georgios"}],"date_published":"2018-10-25T00:00:00Z","citation":{"ieee":"L. Vukušić, J. Kukucka, H. Watzinger, J. M. Milem, F. Schäffler, and G. Katsaros, “Single-shot readout of hole spins in Ge,” <i>Nano Letters</i>, vol. 18, no. 11. American Chemical Society, pp. 7141–7145, 2018.","chicago":"Vukušić, Lada, Josip Kukucka, Hannes Watzinger, Joshua M Milem, Friedrich Schäffler, and Georgios Katsaros. “Single-Shot Readout of Hole Spins in Ge.” <i>Nano Letters</i>. American Chemical Society, 2018. <a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">https://doi.org/10.1021/acs.nanolett.8b03217</a>.","ama":"Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. <i>Nano Letters</i>. 2018;18(11):7141-7145. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">10.1021/acs.nanolett.8b03217</a>","mla":"Vukušić, Lada, et al. “Single-Shot Readout of Hole Spins in Ge.” <i>Nano Letters</i>, vol. 18, no. 11, American Chemical Society, 2018, pp. 7141–45, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">10.1021/acs.nanolett.8b03217</a>.","short":"L. Vukušić, J. Kukucka, H. Watzinger, J.M. Milem, F. Schäffler, G. Katsaros, Nano Letters 18 (2018) 7141–7145.","ista":"Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. 2018. Single-shot readout of hole spins in Ge. Nano Letters. 18(11), 7141–7145.","apa":"Vukušić, L., Kukucka, J., Watzinger, H., Milem, J. M., Schäffler, F., &#38; Katsaros, G. (2018). Single-shot readout of hole spins in Ge. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.8b03217\">https://doi.org/10.1021/acs.nanolett.8b03217</a>"},"project":[{"call_identifier":"FP7","grant_number":"335497","_id":"25517E86-B435-11E9-9278-68D0E5697425","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires"}],"pubrep_id":"1065","has_accepted_license":"1","scopus_import":"1","issue":"11","title":"Single-shot readout of hole spins in Ge","file":[{"creator":"system","access_level":"open_access","content_type":"application/pdf","relation":"main_file","file_name":"IST-2018-1065-v1+1_ACS_nanoletters_8b03217.pdf","file_size":1361441,"file_id":"5194","checksum":"3e6034a94c6b5335e939145d88bdb371","date_created":"2018-12-12T10:16:08Z","date_updated":"2020-07-14T12:45:37Z"}],"related_material":{"record":[{"id":"7977","relation":"popular_science"},{"status":"public","id":"69","relation":"dissertation_contains"},{"relation":"dissertation_contains","id":"7996","status":"public"}]},"external_id":{"isi":["000451102100064"],"pmid":["30359041"]},"publication":"Nano Letters","date_updated":"2023-09-18T09:30:37Z","status":"public","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"abstract":[{"text":"The strong atomistic spin–orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT are reported, with a total readout visibility of about 70%. By analyzing separately the spin-to-charge conversion and charge readout fidelities, we have obtained insight into the processes limiting the visibilities of hole spins. The analyses suggest that high hole visibilities are feasible at realistic experimental conditions, underlying the potential of hole spins for the realization of viable qubit devices.","lang":"eng"}],"ec_funded":1,"tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"day":"25","publication_status":"published","page":"7141 - 7145","oa_version":"Published Version"},{"isi":1,"article_type":"original","volume":9,"month":"09","quality_controlled":"1","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","ddc":["530"],"article_processing_charge":"Yes","file_date_updated":"2020-07-14T12:48:02Z","intvolume":"         9","date_created":"2018-12-11T11:44:30Z","department":[{"_id":"GeKa"}],"date_published":"2018-09-25T00:00:00Z","author":[{"full_name":"Watzinger, Hannes","first_name":"Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Josip","full_name":"Kukucka, Josip","last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87"},{"orcid":"0000-0003-2424-8636","last_name":"Vukusic","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","first_name":"Lada","full_name":"Vukusic, Lada"},{"last_name":"Gao","first_name":"Fei","full_name":"Gao, Fei"},{"last_name":"Wang","first_name":"Ting","full_name":"Wang, Ting"},{"last_name":"Schäffler","first_name":"Friedrich","full_name":"Schäffler, Friedrich"},{"full_name":"Zhang, Jian","first_name":"Jian","last_name":"Zhang"},{"orcid":"0000-0001-8342-202X","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","full_name":"Katsaros, Georgios","first_name":"Georgios"}],"oa":1,"_id":"77","type":"journal_article","language":[{"iso":"eng"}],"doi":"10.1038/s41467-018-06418-4","publisher":"Nature Publishing Group","year":"2018","publication":"Nature Communications","related_material":{"record":[{"relation":"popular_science","id":"7977"},{"relation":"dissertation_contains","status":"public","id":"7996"}]},"external_id":{"isi":["000445560800010"]},"title":"A germanium hole spin qubit","file":[{"creator":"dernst","access_level":"open_access","content_type":"application/pdf","relation":"main_file","file_name":"2018_NatureComm_Watzinger.pdf","file_size":1063469,"checksum":"e7148c10a64497e279c4de570b6cc544","date_created":"2018-12-17T10:28:30Z","file_id":"5687","date_updated":"2020-07-14T12:48:02Z"}],"issue":"3902 ","scopus_import":"1","has_accepted_license":"1","project":[{"_id":"25517E86-B435-11E9-9278-68D0E5697425","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","grant_number":"335497","call_identifier":"FP7"},{"grant_number":"Y00715","call_identifier":"FWF","name":"Loch Spin-Qubits und Majorana-Fermionen in Germanium","_id":"2552F888-B435-11E9-9278-68D0E5697425"}],"citation":{"apa":"Watzinger, H., Kukucka, J., Vukušić, L., Gao, F., Wang, T., Schäffler, F., … Katsaros, G. (2018). A germanium hole spin qubit. <i>Nature Communications</i>. Nature Publishing Group. <a href=\"https://doi.org/10.1038/s41467-018-06418-4\">https://doi.org/10.1038/s41467-018-06418-4</a>","ista":"Watzinger H, Kukucka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J, Katsaros G. 2018. A germanium hole spin qubit. Nature Communications. 9(3902).","mla":"Watzinger, Hannes, et al. “A Germanium Hole Spin Qubit.” <i>Nature Communications</i>, vol. 9, no. 3902, Nature Publishing Group, 2018, doi:<a href=\"https://doi.org/10.1038/s41467-018-06418-4\">10.1038/s41467-018-06418-4</a>.","short":"H. Watzinger, J. Kukucka, L. Vukušić, F. Gao, T. Wang, F. Schäffler, J. Zhang, G. Katsaros, Nature Communications 9 (2018).","ama":"Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. <i>Nature Communications</i>. 2018;9(3902). doi:<a href=\"https://doi.org/10.1038/s41467-018-06418-4\">10.1038/s41467-018-06418-4</a>","chicago":"Watzinger, Hannes, Josip Kukucka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich Schäffler, Jian Zhang, and Georgios Katsaros. “A Germanium Hole Spin Qubit.” <i>Nature Communications</i>. Nature Publishing Group, 2018. <a href=\"https://doi.org/10.1038/s41467-018-06418-4\">https://doi.org/10.1038/s41467-018-06418-4</a>.","ieee":"H. Watzinger <i>et al.</i>, “A germanium hole spin qubit,” <i>Nature Communications</i>, vol. 9, no. 3902. Nature Publishing Group, 2018."},"oa_version":"Published Version","publication_status":"published","day":"25","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"ec_funded":1,"abstract":[{"text":"Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices.","lang":"eng"}],"acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"status":"public","date_updated":"2023-09-08T11:44:02Z"},{"has_accepted_license":"1","alternative_title":["ISTA Thesis"],"citation":{"ama":"Watzinger H. Ge hut wires - from growth to hole spin resonance. 2018. doi:<a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">10.15479/AT:ISTA:th_1033</a>","apa":"Watzinger, H. (2018). <i>Ge hut wires - from growth to hole spin resonance</i>. Institute of Science and Technology Austria. <a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">https://doi.org/10.15479/AT:ISTA:th_1033</a>","short":"H. Watzinger, Ge Hut Wires - from Growth to Hole Spin Resonance, Institute of Science and Technology Austria, 2018.","ista":"Watzinger H. 2018. Ge hut wires - from growth to hole spin resonance. Institute of Science and Technology Austria.","mla":"Watzinger, Hannes. <i>Ge Hut Wires - from Growth to Hole Spin Resonance</i>. Institute of Science and Technology Austria, 2018, doi:<a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">10.15479/AT:ISTA:th_1033</a>.","ieee":"H. Watzinger, “Ge hut wires - from growth to hole spin resonance,” Institute of Science and Technology Austria, 2018.","chicago":"Watzinger, Hannes. “Ge Hut Wires - from Growth to Hole Spin Resonance.” Institute of Science and Technology Austria, 2018. <a href=\"https://doi.org/10.15479/AT:ISTA:th_1033\">https://doi.org/10.15479/AT:ISTA:th_1033</a>."},"pubrep_id":"1033","file":[{"creator":"dernst","relation":"main_file","content_type":"application/pdf","access_level":"open_access","file_size":85539748,"file_name":"2018_Thesis_Watzinger.pdf","date_updated":"2020-07-14T12:46:35Z","file_id":"6249","date_created":"2019-04-09T07:13:28Z","checksum":"b653b5216251f938ddbeafd1de88667c"},{"file_size":21830697,"file_name":"2018_Thesis_Watzinger_source.zip","date_updated":"2020-07-14T12:46:35Z","checksum":"39bcf8de7ac5b1bb516b11ce2f966785","file_id":"6250","date_created":"2019-04-09T07:13:27Z","creator":"dernst","content_type":"application/zip","relation":"source_file","access_level":"closed"}],"title":"Ge hut wires - from growth to hole spin resonance","status":"public","date_updated":"2023-09-07T12:27:43Z","abstract":[{"text":"Nowadays, quantum computation is receiving more and more attention as an alternative to the classical way of computing. For realizing a quantum computer, different devices are investigated as potential quantum bits. In this thesis, the focus is on Ge hut wires, which turned out to be promising candidates for implementing hole spin quantum bits. The advantages of Ge as a material system are the low hyperfine interaction for holes and the strong spin orbit coupling, as well as the compatibility with the highly developed CMOS processes in industry. In addition, Ge can also be isotopically purified which is expected to boost the spin coherence times. The strong spin orbit interaction for holes in Ge on the one hand enables the full electrical control of the quantum bit and on the other hand should allow short spin manipulation times. Starting with a bare Si wafer, this work covers the entire process reaching from growth over the fabrication and characterization of hut wire devices up to the demonstration of hole spin resonance. From experiments with single quantum dots, a large g-factor anisotropy between the in-plane and the out-of-plane direction was found. A comparison to a theoretical model unveiled the heavy-hole character of the lowest energy states. The second part of the thesis addresses double quantum dot devices, which were realized by adding two gate electrodes to a hut wire. In such devices, Pauli spin blockade was observed, which can serve as a read-out mechanism for spin quantum bits. Applying oscillating electric fields in spin blockade allowed the demonstration of continuous spin rotations and the extraction of a lower bound for the spin dephasing time. Despite the strong spin orbit coupling in Ge, the obtained value for the dephasing time is comparable to what has been recently reported for holes in Si. All in all, the presented results point out the high potential of Ge hut wires as a platform for long-lived, fast and fully electrically tunable hole spin quantum bits.","lang":"eng"}],"tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"day":"30","page":"77","oa_version":"Published Version","publication_status":"published","degree_awarded":"PhD","file_date_updated":"2020-07-14T12:46:35Z","article_processing_charge":"No","ddc":["530"],"user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","department":[{"_id":"GeKa"}],"date_created":"2018-12-11T11:44:21Z","supervisor":[{"orcid":"0000-0001-8342-202X","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"publist_id":"8005","publication_identifier":{"issn":["2663-337X"]},"month":"07","type":"dissertation","year":"2018","publisher":"Institute of Science and Technology Austria","doi":"10.15479/AT:ISTA:th_1033","language":[{"iso":"eng"}],"date_published":"2018-07-30T00:00:00Z","_id":"49","oa":1,"author":[{"full_name":"Watzinger, Hannes","first_name":"Hannes","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","last_name":"Watzinger"}]},{"isi":1,"volume":17,"month":"08","quality_controlled":"1","publist_id":"6808","publication_identifier":{"issn":["15306984"]},"article_processing_charge":"No","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","ddc":["539"],"file_date_updated":"2020-07-14T12:48:13Z","intvolume":"        17","date_created":"2018-12-11T11:48:47Z","department":[{"_id":"GeKa"}],"date_published":"2017-08-10T00:00:00Z","author":[{"first_name":"Lada","full_name":"Vukusic, Lada","orcid":"0000-0003-2424-8636","id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukusic"},{"full_name":"Kukucka, Josip","first_name":"Josip","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka"},{"last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87","first_name":"Hannes","full_name":"Watzinger, Hannes"},{"last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"oa":1,"_id":"840","type":"journal_article","language":[{"iso":"eng"}],"doi":"10.1021/acs.nanolett.7b02627","publisher":"American Chemical Society","year":"2017","publication":"Nano Letters","related_material":{"record":[{"id":"7977","relation":"popular_science"},{"status":"public","id":"69","relation":"dissertation_contains"},{"status":"public","id":"7996","relation":"dissertation_contains"}]},"external_id":{"isi":["000411043500078"]},"title":"Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry","file":[{"file_name":"IST-2017-865-v1+1_acs.nanolett.7b02627.pdf","file_size":2449546,"date_created":"2018-12-12T10:12:33Z","checksum":"761371a0129b2aa442424b9561450ece","file_id":"4951","date_updated":"2020-07-14T12:48:13Z","creator":"system","access_level":"open_access","content_type":"application/pdf","relation":"main_file"}],"issue":"9","scopus_import":"1","has_accepted_license":"1","pubrep_id":"865","project":[{"name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425","grant_number":"335497","call_identifier":"FP7"}],"citation":{"apa":"Vukušić, L., Kukucka, J., Watzinger, H., &#38; Katsaros, G. (2017). Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">https://doi.org/10.1021/acs.nanolett.7b02627</a>","ista":"Vukušić L, Kukucka J, Watzinger H, Katsaros G. 2017. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 17(9), 5706–5710.","short":"L. Vukušić, J. Kukucka, H. Watzinger, G. Katsaros, Nano Letters 17 (2017) 5706–5710.","mla":"Vukušić, Lada, et al. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” <i>Nano Letters</i>, vol. 17, no. 9, American Chemical Society, 2017, pp. 5706–10, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">10.1021/acs.nanolett.7b02627</a>.","ama":"Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. <i>Nano Letters</i>. 2017;17(9):5706-5710. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">10.1021/acs.nanolett.7b02627</a>","chicago":"Vukušić, Lada, Josip Kukucka, Hannes Watzinger, and Georgios Katsaros. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” <i>Nano Letters</i>. American Chemical Society, 2017. <a href=\"https://doi.org/10.1021/acs.nanolett.7b02627\">https://doi.org/10.1021/acs.nanolett.7b02627</a>.","ieee":"L. Vukušić, J. Kukucka, H. Watzinger, and G. Katsaros, “Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry,” <i>Nano Letters</i>, vol. 17, no. 9. American Chemical Society, pp. 5706–5710, 2017."},"oa_version":"Published Version","page":"5706 - 5710","publication_status":"published","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"day":"10","ec_funded":1,"abstract":[{"lang":"eng","text":"Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3 e. By integrating the T-like structure into a radiofrequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10 μs are attributed to the small effective mass of Ge heavy-hole states and pave the way toward projective spin readout measurements."}],"acknowledged_ssus":[{"_id":"M-Shop"}],"status":"public","date_updated":"2023-09-26T15:50:22Z"},{"date_created":"2018-12-11T11:51:24Z","acknowledgement":"The work was supported by the EC FP7 ICT project SiSPIN no. 323841, the EC FP7 ICT project PAMS no. 610446, the ERC Starting Grant no. 335497, the FWF-I-1190-N20 project, and the Swiss NSF. We acknowledge F. Schäffler for fruitful discussions related to the hut wire growth and for giving us access to the molecular beam epitaxy system, M. Schatzl for her support in electron beam lithography, and V. Jadris ̌ko for helping us with the COMSOL simulations. Finally, we thank G. Bauer for his continuous support. ","department":[{"_id":"GeKa"}],"file_date_updated":"2020-07-14T12:44:44Z","ddc":["539"],"user_id":"3E5EF7F0-F248-11E8-B48F-1D18A9856A87","intvolume":"        16","month":"09","publist_id":"5941","quality_controlled":"1","volume":16,"doi":"10.1021/acs.nanolett.6b02715","language":[{"iso":"eng"}],"year":"2016","publisher":"American Chemical Society","type":"journal_article","author":[{"full_name":"Watzinger, Hannes","first_name":"Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"},{"first_name":"Christoph","full_name":"Kloeffel, Christoph","last_name":"Kloeffel"},{"id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukusic","orcid":"0000-0003-2424-8636","full_name":"Vukusic, Lada","first_name":"Lada"},{"last_name":"Rossell","full_name":"Rossell, Marta","first_name":"Marta"},{"first_name":"Violetta","full_name":"Sessi, Violetta","last_name":"Sessi"},{"id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","last_name":"Kukucka","first_name":"Josip","full_name":"Kukucka, Josip"},{"last_name":"Kirchschlager","first_name":"Raimund","full_name":"Kirchschlager, Raimund"},{"last_name":"Lausecker","id":"33662F76-F248-11E8-B48F-1D18A9856A87","first_name":"Elisabeth","full_name":"Lausecker, Elisabeth"},{"full_name":"Truhlar, Alisha","first_name":"Alisha","id":"49CBC780-F248-11E8-B48F-1D18A9856A87","last_name":"Truhlar"},{"full_name":"Glaser, Martin","first_name":"Martin","last_name":"Glaser"},{"full_name":"Rastelli, Armando","first_name":"Armando","last_name":"Rastelli"},{"first_name":"Andreas","full_name":"Fuhrer, Andreas","last_name":"Fuhrer"},{"full_name":"Loss, Daniel","first_name":"Daniel","last_name":"Loss"},{"full_name":"Katsaros, Georgios","first_name":"Georgios","last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X"}],"_id":"1328","oa":1,"date_published":"2016-09-22T00:00:00Z","pubrep_id":"664","citation":{"mla":"Watzinger, Hannes, et al. “Heavy-Hole States in Germanium Hut Wires.” <i>Nano Letters</i>, vol. 16, no. 11, American Chemical Society, 2016, pp. 6879–85, doi:<a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">10.1021/acs.nanolett.6b02715</a>.","ista":"Watzinger H, Kloeffel C, Vukušić L, Rossell M, Sessi V, Kukucka J, Kirchschlager R, Lausecker E, Truhlar A, Glaser M, Rastelli A, Fuhrer A, Loss D, Katsaros G. 2016. Heavy-hole states in germanium hut wires. Nano Letters. 16(11), 6879–6885.","short":"H. Watzinger, C. Kloeffel, L. Vukušić, M. Rossell, V. Sessi, J. Kukucka, R. Kirchschlager, E. Lausecker, A. Truhlar, M. Glaser, A. Rastelli, A. Fuhrer, D. Loss, G. Katsaros, Nano Letters 16 (2016) 6879–6885.","apa":"Watzinger, H., Kloeffel, C., Vukušić, L., Rossell, M., Sessi, V., Kukucka, J., … Katsaros, G. (2016). Heavy-hole states in germanium hut wires. <i>Nano Letters</i>. American Chemical Society. <a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">https://doi.org/10.1021/acs.nanolett.6b02715</a>","ama":"Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut wires. <i>Nano Letters</i>. 2016;16(11):6879-6885. doi:<a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">10.1021/acs.nanolett.6b02715</a>","chicago":"Watzinger, Hannes, Christoph Kloeffel, Lada Vukušić, Marta Rossell, Violetta Sessi, Josip Kukucka, Raimund Kirchschlager, et al. “Heavy-Hole States in Germanium Hut Wires.” <i>Nano Letters</i>. American Chemical Society, 2016. <a href=\"https://doi.org/10.1021/acs.nanolett.6b02715\">https://doi.org/10.1021/acs.nanolett.6b02715</a>.","ieee":"H. Watzinger <i>et al.</i>, “Heavy-hole states in germanium hut wires,” <i>Nano Letters</i>, vol. 16, no. 11. American Chemical Society, pp. 6879–6885, 2016."},"project":[{"_id":"25517E86-B435-11E9-9278-68D0E5697425","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","call_identifier":"FP7","grant_number":"335497"}],"scopus_import":1,"issue":"11","has_accepted_license":"1","publication":"Nano Letters","file":[{"date_updated":"2020-07-14T12:44:44Z","file_id":"5053","date_created":"2018-12-12T10:14:04Z","checksum":"b63feece90d7b620ece49ca632e34ff3","file_size":535121,"file_name":"IST-2016-664-v1+1_acs.nanolett.6b02715.pdf","content_type":"application/pdf","relation":"main_file","access_level":"open_access","creator":"system"}],"title":"Heavy-hole states in germanium hut wires","related_material":{"record":[{"relation":"popular_science","id":"7977","status":"for_moderation"},{"relation":"dissertation_contains","id":"7996","status":"public"}]},"date_updated":"2023-09-07T13:15:02Z","status":"public","day":"22","tmp":{"legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","short":"CC BY (4.0)"},"oa_version":"Published Version","publication_status":"published","page":"6879 - 6885","abstract":[{"lang":"eng","text":"Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function of heavy-hole character. A light-hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors compared with those for pure heavy holes. Given this tiny light-hole contribution, the spin lifetimes are expected to be very long, even in isotopically nonpurified samples."}],"ec_funded":1}]