[{"department":[{"_id":"GeKa"},{"_id":"Bio"}],"title":"Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states","status":"public","user_id":"4359f0d1-fa6c-11eb-b949-802e58b17ae8","publisher":"American Association for the Advancement of Science","external_id":{"isi":["000677843100034"],"arxiv":["2008.02348"]},"acknowledgement":"The authors thank A. Higginbotham, E. J. H. Lee and F. R. Martins for helpful discussions. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility; the NOMIS Foundation and Microsoft; the European Union’s Horizon 2020 research and innovation program under the Marie SklodowskaCurie grant agreement No 844511; the FETOPEN Grant Agreement No. 828948; the European Research Commission through the grant agreement HEMs-DAM No 716655; the Spanish Ministry of Science and Innovation through Grants PGC2018-097018-B-I00, PCI2018-093026, FIS2016-80434-P (AEI/FEDER, EU), RYC2011-09345 (Ram´on y Cajal Programme), and the Mar´ıa de Maeztu Programme for Units of Excellence in R&D (CEX2018-000805-M); the CSIC Research Platform on Quantum Technologies PTI-001.","project":[{"_id":"262116AA-B435-11E9-9278-68D0E5697425","name":"Hybrid Semiconductor - Superconductor Quantum Devices"},{"name":"Majorana bound states in Ge/SiGe heterostructures","grant_number":"844511","call_identifier":"H2020","_id":"26A151DA-B435-11E9-9278-68D0E5697425"}],"publication":"Science","article_processing_charge":"No","main_file_link":[{"url":"https://arxiv.org/abs/2008.02348","open_access":"1"}],"oa_version":"Submitted Version","volume":373,"article_type":"original","isi":1,"quality_controlled":"1","publication_identifier":{"issn":["00368075"],"eissn":["10959203"]},"article_number":"82-88","day":"02","oa":1,"citation":{"short":"M. Valentini, F. Peñaranda, A.C. Hofmann, M. Brauns, R. Hauschild, P. Krogstrup, P. San-Jose, E. Prada, R. Aguado, G. Katsaros, Science 373 (2021).","chicago":"Valentini, Marco, Fernando Peñaranda, Andrea C Hofmann, Matthias Brauns, Robert Hauschild, Peter Krogstrup, Pablo San-Jose, Elsa Prada, Ramón Aguado, and Georgios Katsaros. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced by Flux-Tunable Andreev States.” <i>Science</i>. American Association for the Advancement of Science, 2021. <a href=\"https://doi.org/10.1126/science.abf1513\">https://doi.org/10.1126/science.abf1513</a>.","ieee":"M. Valentini <i>et al.</i>, “Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states,” <i>Science</i>, vol. 373, no. 6550. American Association for the Advancement of Science, 2021.","ama":"Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. <i>Science</i>. 2021;373(6550). doi:<a href=\"https://doi.org/10.1126/science.abf1513\">10.1126/science.abf1513</a>","mla":"Valentini, Marco, et al. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced by Flux-Tunable Andreev States.” <i>Science</i>, vol. 373, no. 6550, 82–88, American Association for the Advancement of Science, 2021, doi:<a href=\"https://doi.org/10.1126/science.abf1513\">10.1126/science.abf1513</a>.","apa":"Valentini, M., Peñaranda, F., Hofmann, A. C., Brauns, M., Hauschild, R., Krogstrup, P., … Katsaros, G. (2021). Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. <i>Science</i>. American Association for the Advancement of Science. <a href=\"https://doi.org/10.1126/science.abf1513\">https://doi.org/10.1126/science.abf1513</a>","ista":"Valentini M, Peñaranda F, Hofmann AC, Brauns M, Hauschild R, Krogstrup P, San-Jose P, Prada E, Aguado R, Katsaros G. 2021. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 373(6550), 82–88."},"publication_status":"published","intvolume":"       373","acknowledged_ssus":[{"_id":"M-Shop"},{"_id":"NanoFab"}],"type":"journal_article","arxiv":1,"date_updated":"2024-02-21T12:40:09Z","doi":"10.1126/science.abf1513","year":"2021","month":"07","language":[{"iso":"eng"}],"date_published":"2021-07-02T00:00:00Z","scopus_import":"1","date_created":"2020-12-02T10:51:52Z","_id":"8910","abstract":[{"text":"A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks—features that could be easily misinterpreted as originating from Majorana zero modes but are unrelated to topological superconductivity.","lang":"eng"}],"ec_funded":1,"author":[{"id":"C0BB2FAC-D767-11E9-B658-BC13E6697425","full_name":"Valentini, Marco","last_name":"Valentini","first_name":"Marco"},{"first_name":"Fernando","last_name":"Peñaranda","full_name":"Peñaranda, Fernando"},{"first_name":"Andrea C","last_name":"Hofmann","full_name":"Hofmann, Andrea C","id":"340F461A-F248-11E8-B48F-1D18A9856A87"},{"id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","first_name":"Matthias","last_name":"Brauns","full_name":"Brauns, Matthias"},{"id":"4E01D6B4-F248-11E8-B48F-1D18A9856A87","full_name":"Hauschild, Robert","last_name":"Hauschild","orcid":"0000-0001-9843-3522","first_name":"Robert"},{"full_name":"Krogstrup, Peter","last_name":"Krogstrup","first_name":"Peter"},{"last_name":"San-Jose","first_name":"Pablo","full_name":"San-Jose, Pablo"},{"first_name":"Elsa","last_name":"Prada","full_name":"Prada, Elsa"},{"last_name":"Aguado","first_name":"Ramón","full_name":"Aguado, Ramón"},{"id":"38DB5788-F248-11E8-B48F-1D18A9856A87","orcid":"0000-0001-8342-202X","last_name":"Katsaros","first_name":"Georgios","full_name":"Katsaros, Georgios"}],"issue":"6550","related_material":{"link":[{"url":"https://ist.ac.at/en/news/unfinding-a-split-electron/","relation":"press_release","description":"News on IST Homepage"}],"record":[{"id":"13286","relation":"dissertation_contains","status":"public"},{"status":"public","relation":"research_data","id":"9389"}]}},{"file":[{"file_size":1850530,"content_type":"application/pdf","relation":"main_file","file_name":"IST-2018-1016-v1+1_2018_Brauns_Palladium_gates.pdf","file_id":"5256","creator":"system","date_created":"2018-12-12T10:17:04Z","date_updated":"2020-07-14T12:46:02Z","checksum":"20af238ca4ba6491b77270be8d826bf5","access_level":"open_access"}],"oa_version":"Published Version","volume":8,"tmp":{"image":"/images/cc_by.png","name":"Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)","legal_code_url":"https://creativecommons.org/licenses/by/4.0/legalcode","short":"CC BY (4.0)"},"article_number":"5690","day":"09","oa":1,"citation":{"ista":"Brauns M, Amitonov S, Spruijtenburg P, Zwanenburg F. 2018. Palladium gates for reproducible quantum dots in silicon. Scientific Reports. 8(1), 5690.","apa":"Brauns, M., Amitonov, S., Spruijtenburg, P., &#38; Zwanenburg, F. (2018). Palladium gates for reproducible quantum dots in silicon. <i>Scientific Reports</i>. Nature Publishing Group. <a href=\"https://doi.org/10.1038/s41598-018-24004-y\">https://doi.org/10.1038/s41598-018-24004-y</a>","ama":"Brauns M, Amitonov S, Spruijtenburg P, Zwanenburg F. Palladium gates for reproducible quantum dots in silicon. <i>Scientific Reports</i>. 2018;8(1). doi:<a href=\"https://doi.org/10.1038/s41598-018-24004-y\">10.1038/s41598-018-24004-y</a>","mla":"Brauns, Matthias, et al. “Palladium Gates for Reproducible Quantum Dots in Silicon.” <i>Scientific Reports</i>, vol. 8, no. 1, 5690, Nature Publishing Group, 2018, doi:<a href=\"https://doi.org/10.1038/s41598-018-24004-y\">10.1038/s41598-018-24004-y</a>.","ieee":"M. Brauns, S. Amitonov, P. Spruijtenburg, and F. Zwanenburg, “Palladium gates for reproducible quantum dots in silicon,” <i>Scientific Reports</i>, vol. 8, no. 1. Nature Publishing Group, 2018.","chicago":"Brauns, Matthias, Sergey Amitonov, Paul Spruijtenburg, and Floris Zwanenburg. “Palladium Gates for Reproducible Quantum Dots in Silicon.” <i>Scientific Reports</i>. Nature Publishing Group, 2018. <a href=\"https://doi.org/10.1038/s41598-018-24004-y\">https://doi.org/10.1038/s41598-018-24004-y</a>.","short":"M. Brauns, S. Amitonov, P. Spruijtenburg, F. Zwanenburg, Scientific Reports 8 (2018)."},"isi":1,"quality_controlled":"1","publisher":"Nature Publishing Group","title":"Palladium gates for reproducible quantum dots in silicon","status":"public","department":[{"_id":"GeKa"}],"has_accepted_license":"1","file_date_updated":"2020-07-14T12:46:02Z","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","publication":"Scientific Reports","article_processing_charge":"No","external_id":{"isi":["000429404300013"]},"publist_id":"7548","date_created":"2018-12-11T11:45:47Z","_id":"317","date_published":"2018-04-09T00:00:00Z","scopus_import":"1","pubrep_id":"1016","abstract":[{"lang":"eng","text":"We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gates with transmission electron microscopy. The native aluminium oxide is found to be formed all around the aluminium gates, which could lead to the formation of unintentional dots. Therefore, we report on a novel fabrication route that replaces aluminium and its native oxide by palladium with atomic-layer-deposition-grown aluminium oxide. Using this approach, we show the formation of low-disorder gate-defined quantum dots, which are reproducibly fabricated. Furthermore, palladium enables us to further shrink the gate design, allowing us to perform electron transport measurements in the few-electron regime in devices comprising only two gate layers, a major technological advancement. It remains to be seen, whether the introduction of palladium gates can improve the excellent results on electron and nuclear spin qubits defined with an aluminium gate stack."}],"author":[{"id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","full_name":"Brauns, Matthias","last_name":"Brauns","first_name":"Matthias"},{"full_name":"Amitonov, Sergey","last_name":"Amitonov","first_name":"Sergey"},{"full_name":"Spruijtenburg, Paul","first_name":"Paul","last_name":"Spruijtenburg"},{"first_name":"Floris","last_name":"Zwanenburg","full_name":"Zwanenburg, Floris"}],"issue":"1","type":"journal_article","date_updated":"2023-09-13T09:38:00Z","publication_status":"published","intvolume":"         8","month":"04","language":[{"iso":"eng"}],"doi":"10.1038/s41598-018-24004-y","year":"2018","ddc":["539"]},{"issue":"44","abstract":[{"lang":"eng","text":"A Ge–Si core–shell nanowire is used to realize a Josephson field‐effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions."}],"author":[{"full_name":"Ridderbos, Joost","last_name":"Ridderbos","first_name":"Joost"},{"full_name":"Brauns, Matthias","first_name":"Matthias","last_name":"Brauns","id":"33F94E3C-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Shen","first_name":"Jie","full_name":"Shen, Jie"},{"full_name":"de Vries, Folkert K.","last_name":"de Vries","first_name":"Folkert K."},{"full_name":"Li, Ang","last_name":"Li","first_name":"Ang"},{"full_name":"Bakkers, Erik P. A. M.","last_name":"Bakkers","first_name":"Erik P. A. M."},{"full_name":"Brinkman, Alexander","last_name":"Brinkman","first_name":"Alexander"},{"last_name":"Zwanenburg","first_name":"Floris A.","full_name":"Zwanenburg, Floris A."}],"scopus_import":"1","date_published":"2018-11-02T00:00:00Z","_id":"5990","date_created":"2019-02-14T12:14:26Z","year":"2018","doi":"10.1002/adma.201802257","language":[{"iso":"eng"}],"month":"11","intvolume":"        30","publication_status":"published","date_updated":"2023-09-19T14:29:58Z","arxiv":1,"type":"journal_article","publication_identifier":{"issn":["0935-9648"]},"quality_controlled":"1","isi":1,"citation":{"ista":"Ridderbos J, Brauns M, Shen J, de Vries FK, Li A, Bakkers EPAM, Brinkman A, Zwanenburg FA. 2018. Josephson effect in a few-hole quantum dot. Advanced Materials. 30(44), 1802257.","apa":"Ridderbos, J., Brauns, M., Shen, J., de Vries, F. K., Li, A., Bakkers, E. P. A. M., … Zwanenburg, F. A. (2018). Josephson effect in a few-hole quantum dot. <i>Advanced Materials</i>. Wiley. <a href=\"https://doi.org/10.1002/adma.201802257\">https://doi.org/10.1002/adma.201802257</a>","ama":"Ridderbos J, Brauns M, Shen J, et al. Josephson effect in a few-hole quantum dot. <i>Advanced Materials</i>. 2018;30(44). doi:<a href=\"https://doi.org/10.1002/adma.201802257\">10.1002/adma.201802257</a>","mla":"Ridderbos, Joost, et al. “Josephson Effect in a Few-Hole Quantum Dot.” <i>Advanced Materials</i>, vol. 30, no. 44, 1802257, Wiley, 2018, doi:<a href=\"https://doi.org/10.1002/adma.201802257\">10.1002/adma.201802257</a>.","chicago":"Ridderbos, Joost, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, and Floris A. Zwanenburg. “Josephson Effect in a Few-Hole Quantum Dot.” <i>Advanced Materials</i>. Wiley, 2018. <a href=\"https://doi.org/10.1002/adma.201802257\">https://doi.org/10.1002/adma.201802257</a>.","ieee":"J. Ridderbos <i>et al.</i>, “Josephson effect in a few-hole quantum dot,” <i>Advanced Materials</i>, vol. 30, no. 44. Wiley, 2018.","short":"J. Ridderbos, M. Brauns, J. Shen, F.K. de Vries, A. Li, E.P.A.M. Bakkers, A. Brinkman, F.A. Zwanenburg, Advanced Materials 30 (2018)."},"oa":1,"day":"02","article_number":"1802257","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1809.08487"}],"volume":30,"oa_version":"Preprint","external_id":{"arxiv":["1809.08487"],"isi":["000450232800015"]},"article_processing_charge":"No","publication":"Advanced Materials","user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","department":[{"_id":"GeKa"}],"status":"public","title":"Josephson effect in a few-hole quantum dot","publisher":"Wiley"}]