---
_id: '14547'
abstract:
- lang: eng
  text: "Superconductor-semiconductor heterostructures currently capture a significant
    amount of research interest and they serve as the physical platform in many proposals
    towards topological quantum computation.\r\nDespite being under extensive investigations,
    historically using transport techniques, the basic properties of the interface
    between the superconductor and the semiconductor remain to be understood.\r\n\r\nIn
    this thesis, two separate studies on the Al-InAs heterostructures are reported
    with the first focusing on the physics of the material motivated by the emergence
    of a new phase, the Bogoliubov-Fermi surface. \r\nThe second focuses on a technological
    application, a gate-tunable Josephson parametric amplifier.\r\n\r\nIn the first
    study, we investigate the hypothesized unconventional nature of the induced superconductivity
    at the interface between the Al thin film and the InAs quantum well.\r\nWe embed
    a two-dimensional Al-InAs hybrid system in a resonant microwave circuit allowing
    measurements of change in inductance.\r\nThe behaviour of the resonance in a range
    of temperature and in-plane magnetic field has been studied and compared with
    the theory of conventional s-wave superconductor and a two-component theory that
    includes both contribution of the $s$-wave pairing in Al and the intraband $p
    \\pm ip$ pairing in InAs.\r\nMeasuring the temperature dependence of resonant
    frequency, no discrepancy is found between data and the conventional theory.\r\nWe
    observe the breakdown of superconductivity due to an applied magnetic field which
    contradicts the conventional theory.\r\nIn contrast, the data can be captured
    quantitatively by fitting to a two-component model.\r\nWe find the evidence of
    the intraband $p \\pm ip$ pairing in the InAs and the emergence of the Bogoliubov-Fermi
    surfaces due to magnetic field with the characteristic value $B^* = 0.33~\\mathrm{T}$.\r\nFrom
    the fits, the sheet resistance of Al, the carrier density and mobility in InAs
    are determined.\r\nBy systematically studying the anisotropy of the circuit response,
    we find weak anisotropy for $B < B^*$ and increasingly strong anisotropy for $B
    > B^*$ resulting in a pronounced two-lobe structure in polar plot of frequency
    versus field angle.\r\nStrong resemblance between the field dependence of dissipation
    and superfluid density hints at a hidden signature of the Bogoliubov-Fermi surface
    that is burried in the dissipation data.\r\n\r\nIn the second study, we realize
    a parametric amplifier with a Josephson field effect transistor as the active
    element.\r\nThe device's modest construction consists of a gated SNS weak link
    embedded at the center of a coplanar waveguide resonator.\r\nBy applying a gate
    voltage, the resonant frequency is field-effect tunable over a range of 2 GHz.\r\nModelling
    the JoFET minimally as a parallel RL circuit, the dissipation introduced by the
    JoFET can be quantitatively related to the gate voltage.\r\nWe observed gate-tunable
    Kerr nonlinearity qualitatively in line with expectation.\r\nThe JoFET amplifier
    has 20 dB of gain, 4 MHz of instantaneous bandwidth, and a 1dB compression point
    of -125.5 dBm when operated at a fixed resonant frequency.\r\nIn general, the
    signal-to-noise ratio is improved by 5-7 dB when the JoFET amplifier is activated
    compared.\r\nThe noise of the measurement chain and insertion loss of relevant
    circuit elements are calibrated to determine the expected and the real noise performance
    of the JoFET amplifier.\r\nAs a quantification of the noise performance, the measured
    total input-referred noise of the JoFET amplifier is in good agreement with the
    estimated expectation which takes device loss into account.\r\nWe found that the
    noise performance of the device reported in this document approaches one photon
    of total input-referred added noise which is the quantum limit imposed in nondegenerate
    parametric amplifier."
acknowledged_ssus:
- _id: NanoFab
- _id: Bio
alternative_title:
- ISTA Thesis
article_processing_charge: No
author:
- first_name: Duc T
  full_name: Phan, Duc T
  id: 29C8C0B4-F248-11E8-B48F-1D18A9856A87
  last_name: Phan
citation:
  ama: Phan DT. Resonant microwave spectroscopy of Al-InAs. 2023. doi:<a href="https://doi.org/10.15479/14547">10.15479/14547</a>
  apa: Phan, D. T. (2023). <i>Resonant microwave spectroscopy of Al-InAs</i>. Institute
    of Science and Technology Austria. <a href="https://doi.org/10.15479/14547">https://doi.org/10.15479/14547</a>
  chicago: Phan, Duc T. “Resonant Microwave Spectroscopy of Al-InAs.” Institute of
    Science and Technology Austria, 2023. <a href="https://doi.org/10.15479/14547">https://doi.org/10.15479/14547</a>.
  ieee: D. T. Phan, “Resonant microwave spectroscopy of Al-InAs,” Institute of Science
    and Technology Austria, 2023.
  ista: Phan DT. 2023. Resonant microwave spectroscopy of Al-InAs. Institute of Science
    and Technology Austria.
  mla: Phan, Duc T. <i>Resonant Microwave Spectroscopy of Al-InAs</i>. Institute of
    Science and Technology Austria, 2023, doi:<a href="https://doi.org/10.15479/14547">10.15479/14547</a>.
  short: D.T. Phan, Resonant Microwave Spectroscopy of Al-InAs, Institute of Science
    and Technology Austria, 2023.
date_created: 2023-11-17T13:45:26Z
date_published: 2023-11-16T00:00:00Z
date_updated: 2023-11-30T10:56:04Z
day: '16'
ddc:
- '530'
degree_awarded: PhD
department:
- _id: GradSch
- _id: AnHi
doi: 10.15479/14547
file:
- access_level: open_access
  checksum: db0c37d213bc002125bd59690e9db246
  content_type: application/pdf
  creator: pduc
  date_created: 2023-11-17T13:36:44Z
  date_updated: 2023-11-22T09:46:06Z
  file_id: '14548'
  file_name: Phan_Thesis_pdfa.pdf
  file_size: 34828019
  relation: main_file
- access_level: closed
  checksum: 8d3bd6afa279a0078ffd13e06bb6d56d
  content_type: application/zip
  creator: pduc
  date_created: 2023-11-17T13:44:53Z
  date_updated: 2023-11-17T13:47:54Z
  file_id: '14549'
  file_name: dissertation_src.zip
  file_size: 279319709
  relation: source_file
file_date_updated: 2023-11-22T09:46:06Z
has_accepted_license: '1'
keyword:
- superconductor-semiconductor
- superconductivity
- Al
- InAs
- p-wave
- superconductivity
- JPA
- microwave
language:
- iso: eng
month: '11'
oa: 1
oa_version: Published Version
page: '80'
publication_identifier:
  issn:
  - 2663 - 337X
publication_status: published
publisher: Institute of Science and Technology Austria
related_material:
  record:
  - id: '10851'
    relation: part_of_dissertation
    status: public
  - id: '13264'
    relation: part_of_dissertation
    status: public
status: public
supervisor:
- first_name: Andrew P
  full_name: Higginbotham, Andrew P
  id: 4AD6785A-F248-11E8-B48F-1D18A9856A87
  last_name: Higginbotham
  orcid: 0000-0003-2607-2363
title: Resonant microwave spectroscopy of Al-InAs
tmp:
  image: /images/cc_by_nc_sa.png
  legal_code_url: https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode
  name: Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International (CC
    BY-NC-SA 4.0)
  short: CC BY-NC-SA (4.0)
type: dissertation
user_id: 8b945eb4-e2f2-11eb-945a-df72226e66a9
year: '2023'
...
---
_id: '13264'
abstract:
- lang: eng
  text: "We build a parametric amplifier with a Josephson field-effect transistor
    (JoFET) as the active element. The resonant frequency of the device is field-effect
    tunable over a range of 2 GHz. The JoFET amplifier has 20 dB of gain, 4 MHz of
    instantaneous bandwidth, and a 1-dB compression point of -125.5 dBm when operated
    at a fixed resonance frequency.\r\n\r\n"
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: We thank Shyam Shankar for helpful feedback on the manuscript. We
  gratefully acknowledge the support of the ISTA nanofabrication facility, the Miba
  Machine Shop, and the eMachine Shop. The NYU team acknowledges support from Army
  Research Office Grant No. W911NF2110303.
article_number: '064032'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Duc T
  full_name: Phan, Duc T
  id: 29C8C0B4-F248-11E8-B48F-1D18A9856A87
  last_name: Phan
- first_name: Paul
  full_name: Falthansl-Scheinecker, Paul
  id: 85b43b21-15b2-11ec-abd3-e2c252cc2285
  last_name: Falthansl-Scheinecker
- first_name: Umang
  full_name: Mishra, Umang
  id: 4328fa4c-f128-11eb-9611-c107b0fe4d51
  last_name: Mishra
- first_name: W. M.
  full_name: Strickland, W. M.
  last_name: Strickland
- first_name: D.
  full_name: Langone, D.
  last_name: Langone
- first_name: J.
  full_name: Shabani, J.
  last_name: Shabani
- first_name: Andrew P
  full_name: Higginbotham, Andrew P
  id: 4AD6785A-F248-11E8-B48F-1D18A9856A87
  last_name: Higginbotham
  orcid: 0000-0003-2607-2363
citation:
  ama: Phan DT, Falthansl-Scheinecker P, Mishra U, et al. Gate-tunable superconductor-semiconductor
    parametric amplifier. <i>Physical Review Applied</i>. 2023;19(6). doi:<a href="https://doi.org/10.1103/PhysRevApplied.19.064032">10.1103/PhysRevApplied.19.064032</a>
  apa: Phan, D. T., Falthansl-Scheinecker, P., Mishra, U., Strickland, W. M., Langone,
    D., Shabani, J., &#38; Higginbotham, A. P. (2023). Gate-tunable superconductor-semiconductor
    parametric amplifier. <i>Physical Review Applied</i>. American Physical Society.
    <a href="https://doi.org/10.1103/PhysRevApplied.19.064032">https://doi.org/10.1103/PhysRevApplied.19.064032</a>
  chicago: Phan, Duc T, Paul Falthansl-Scheinecker, Umang Mishra, W. M. Strickland,
    D. Langone, J. Shabani, and Andrew P Higginbotham. “Gate-Tunable Superconductor-Semiconductor
    Parametric Amplifier.” <i>Physical Review Applied</i>. American Physical Society,
    2023. <a href="https://doi.org/10.1103/PhysRevApplied.19.064032">https://doi.org/10.1103/PhysRevApplied.19.064032</a>.
  ieee: D. T. Phan <i>et al.</i>, “Gate-tunable superconductor-semiconductor parametric
    amplifier,” <i>Physical Review Applied</i>, vol. 19, no. 6. American Physical
    Society, 2023.
  ista: Phan DT, Falthansl-Scheinecker P, Mishra U, Strickland WM, Langone D, Shabani
    J, Higginbotham AP. 2023. Gate-tunable superconductor-semiconductor parametric
    amplifier. Physical Review Applied. 19(6), 064032.
  mla: Phan, Duc T., et al. “Gate-Tunable Superconductor-Semiconductor Parametric
    Amplifier.” <i>Physical Review Applied</i>, vol. 19, no. 6, 064032, American Physical
    Society, 2023, doi:<a href="https://doi.org/10.1103/PhysRevApplied.19.064032">10.1103/PhysRevApplied.19.064032</a>.
  short: D.T. Phan, P. Falthansl-Scheinecker, U. Mishra, W.M. Strickland, D. Langone,
    J. Shabani, A.P. Higginbotham, Physical Review Applied 19 (2023).
date_created: 2023-07-23T22:01:12Z
date_published: 2023-06-09T00:00:00Z
date_updated: 2023-11-30T10:56:03Z
day: '09'
department:
- _id: AnHi
- _id: OnHo
doi: 10.1103/PhysRevApplied.19.064032
external_id:
  arxiv:
  - '2206.05746'
  isi:
  - '001012022600004'
intvolume: '        19'
isi: 1
issue: '6'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://arxiv.org/abs/2206.05746
month: '06'
oa: 1
oa_version: Preprint
publication: Physical Review Applied
publication_identifier:
  eissn:
  - 2331-7019
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
  record:
  - id: '14547'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: Gate-tunable superconductor-semiconductor parametric amplifier
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 19
year: '2023'
...
---
_id: '10851'
abstract:
- lang: eng
  text: Superconductor-semiconductor hybrid devices are at the heart of several proposed
    approaches to quantum information processing, but their basic properties remain
    to be understood. We embed a twodimensional Al-InAs hybrid system in a resonant
    microwave circuit, probing the breakdown of superconductivity due to an applied
    magnetic field. We find a fingerprint from the two-component nature of the hybrid
    system, and quantitatively compare with a theory that includes the contribution
    of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi
    surfaces due to magnetic field. Separately resolving the Al and InAs contributions
    allows us to determine the carrier density and mobility in the InAs.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: M. S. acknowledges useful discussions with A. Levchenko and P. A.
  Lee, and E. Berg. This research was supported by the Scientific Service Units of
  IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication
  facility. J. S. and A. G. acknowledge funding from the European Union’s Horizon
  2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement
  No. 754411.W. M. Hatefipour, W. M. Strickland and J. Shabani acknowledge funding
  from Office of Naval Research Award No. N00014-21-1-2450.
article_number: '107701'
article_processing_charge: No
article_type: original
arxiv: 1
author:
- first_name: Duc T
  full_name: Phan, Duc T
  id: 29C8C0B4-F248-11E8-B48F-1D18A9856A87
  last_name: Phan
- first_name: Jorden L
  full_name: Senior, Jorden L
  id: 5479D234-2D30-11EA-89CC-40953DDC885E
  last_name: Senior
  orcid: 0000-0002-0672-9295
- first_name: Areg
  full_name: Ghazaryan, Areg
  id: 4AF46FD6-F248-11E8-B48F-1D18A9856A87
  last_name: Ghazaryan
  orcid: 0000-0001-9666-3543
- first_name: M.
  full_name: Hatefipour, M.
  last_name: Hatefipour
- first_name: W. M.
  full_name: Strickland, W. M.
  last_name: Strickland
- first_name: J.
  full_name: Shabani, J.
  last_name: Shabani
- first_name: Maksym
  full_name: Serbyn, Maksym
  id: 47809E7E-F248-11E8-B48F-1D18A9856A87
  last_name: Serbyn
  orcid: 0000-0002-2399-5827
- first_name: Andrew P
  full_name: Higginbotham, Andrew P
  id: 4AD6785A-F248-11E8-B48F-1D18A9856A87
  last_name: Higginbotham
  orcid: 0000-0003-2607-2363
citation:
  ama: Phan DT, Senior JL, Ghazaryan A, et al. Detecting induced p±ip pairing at the
    Al-InAs interface with a quantum microwave circuit. <i>Physical Review Letters</i>.
    2022;128(10). doi:<a href="https://doi.org/10.1103/physrevlett.128.107701">10.1103/physrevlett.128.107701</a>
  apa: Phan, D. T., Senior, J. L., Ghazaryan, A., Hatefipour, M., Strickland, W. M.,
    Shabani, J., … Higginbotham, A. P. (2022). Detecting induced p±ip pairing at the
    Al-InAs interface with a quantum microwave circuit. <i>Physical Review Letters</i>.
    American Physical Society. <a href="https://doi.org/10.1103/physrevlett.128.107701">https://doi.org/10.1103/physrevlett.128.107701</a>
  chicago: Phan, Duc T, Jorden L Senior, Areg Ghazaryan, M. Hatefipour, W. M. Strickland,
    J. Shabani, Maksym Serbyn, and Andrew P Higginbotham. “Detecting Induced P±ip
    Pairing at the Al-InAs Interface with a Quantum Microwave Circuit.” <i>Physical
    Review Letters</i>. American Physical Society, 2022. <a href="https://doi.org/10.1103/physrevlett.128.107701">https://doi.org/10.1103/physrevlett.128.107701</a>.
  ieee: D. T. Phan <i>et al.</i>, “Detecting induced p±ip pairing at the Al-InAs interface
    with a quantum microwave circuit,” <i>Physical Review Letters</i>, vol. 128, no.
    10. American Physical Society, 2022.
  ista: Phan DT, Senior JL, Ghazaryan A, Hatefipour M, Strickland WM, Shabani J, Serbyn
    M, Higginbotham AP. 2022. Detecting induced p±ip pairing at the Al-InAs interface
    with a quantum microwave circuit. Physical Review Letters. 128(10), 107701.
  mla: Phan, Duc T., et al. “Detecting Induced P±ip Pairing at the Al-InAs Interface
    with a Quantum Microwave Circuit.” <i>Physical Review Letters</i>, vol. 128, no.
    10, 107701, American Physical Society, 2022, doi:<a href="https://doi.org/10.1103/physrevlett.128.107701">10.1103/physrevlett.128.107701</a>.
  short: D.T. Phan, J.L. Senior, A. Ghazaryan, M. Hatefipour, W.M. Strickland, J.
    Shabani, M. Serbyn, A.P. Higginbotham, Physical Review Letters 128 (2022).
date_created: 2022-03-17T11:37:47Z
date_published: 2022-03-11T00:00:00Z
date_updated: 2023-11-30T10:56:03Z
day: '11'
department:
- _id: MaSe
- _id: AnHi
doi: 10.1103/physrevlett.128.107701
ec_funded: 1
external_id:
  arxiv:
  - '2107.03695'
  isi:
  - '000771391100002'
  pmid:
  - ' 35333085'
intvolume: '       128'
isi: 1
issue: '10'
keyword:
- General Physics and Astronomy
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://doi.org/10.48550/arXiv.2107.03695
month: '03'
oa: 1
oa_version: Preprint
pmid: 1
project:
- _id: 260C2330-B435-11E9-9278-68D0E5697425
  call_identifier: H2020
  grant_number: '754411'
  name: ISTplus - Postdoctoral Fellowships
publication: Physical Review Letters
publication_identifier:
  eissn:
  - 1079-7114
  issn:
  - 0031-9007
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
  link:
  - description: News on ISTA Website
    relation: press_release
    url: https://ista.ac.at/en/news/characterizing-super-semi-sandwiches-for-quantum-computing/
  record:
  - id: '10029'
    relation: earlier_version
    status: public
  - id: '14547'
    relation: dissertation_contains
    status: public
scopus_import: '1'
status: public
title: Detecting induced p±ip pairing at the Al-InAs interface with a quantum microwave
  circuit
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 128
year: '2022'
...
---
_id: '10029'
abstract:
- lang: eng
  text: Superconductor-semiconductor hybrids are platforms for realizing effective
    p-wave superconductivity. Spin-orbit coupling, combined with the proximity effect,
    causes the two-dimensional semiconductor to inherit p±ip intraband pairing, and
    application of magnetic field can then result in transitions to the normal state,
    partial Bogoliubov Fermi surfaces, or topological phases with Majorana modes.
    Experimentally probing the hybrid superconductor-semiconductor interface is challenging
    due to the shunting effect of the conventional superconductor. Consequently, the
    nature of induced pairing remains an open question. Here, we use the circuit quantum
    electrodynamics architecture to probe induced superconductivity in a two dimensional
    Al-InAs hybrid system. We observe a strong suppression of superfluid density and
    enhanced dissipation driven by magnetic field, which cannot be accounted for by
    the depairing theory of an s-wave superconductor. These observations are explained
    by a picture of independent intraband p±ip superconductors giving way to partial
    Bogoliubov Fermi surfaces, and allow for the first characterization of key properties
    of the hybrid superconducting system.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: This research was supported by the Scientific Service Units of IST
  Austria through resources provided by the MIBA Machine Shop and the nanofabrication
  facility. JS and AG were supported by funding from the European Union’s Horizon
  2020 research and innovation program under the Marie Sklodowska-Curie Grant Agreement
  No.754411.
article_number: '2107.03695'
article_processing_charge: No
arxiv: 1
author:
- first_name: Duc T
  full_name: Phan, Duc T
  id: 29C8C0B4-F248-11E8-B48F-1D18A9856A87
  last_name: Phan
- first_name: Jorden L
  full_name: Senior, Jorden L
  id: 5479D234-2D30-11EA-89CC-40953DDC885E
  last_name: Senior
  orcid: 0000-0002-0672-9295
- first_name: Areg
  full_name: Ghazaryan, Areg
  id: 4AF46FD6-F248-11E8-B48F-1D18A9856A87
  last_name: Ghazaryan
  orcid: 0000-0001-9666-3543
- first_name: M.
  full_name: Hatefipour, M.
  last_name: Hatefipour
- first_name: W. M.
  full_name: Strickland, W. M.
  last_name: Strickland
- first_name: J.
  full_name: Shabani, J.
  last_name: Shabani
- first_name: Maksym
  full_name: Serbyn, Maksym
  id: 47809E7E-F248-11E8-B48F-1D18A9856A87
  last_name: Serbyn
  orcid: 0000-0002-2399-5827
- first_name: Andrew P
  full_name: Higginbotham, Andrew P
  id: 4AD6785A-F248-11E8-B48F-1D18A9856A87
  last_name: Higginbotham
  orcid: 0000-0003-2607-2363
citation:
  ama: Phan DT, Senior JL, Ghazaryan A, et al. Breakdown of induced p±ip pairing in
    a superconductor-semiconductor hybrid. <i>arXiv</i>.
  apa: Phan, D. T., Senior, J. L., Ghazaryan, A., Hatefipour, M., Strickland, W. M.,
    Shabani, J., … Higginbotham, A. P. (n.d.). Breakdown of induced p±ip pairing in
    a superconductor-semiconductor hybrid. <i>arXiv</i>.
  chicago: Phan, Duc T, Jorden L Senior, Areg Ghazaryan, M. Hatefipour, W. M. Strickland,
    J. Shabani, Maksym Serbyn, and Andrew P Higginbotham. “Breakdown of Induced P±ip
    Pairing in a Superconductor-Semiconductor Hybrid.” <i>ArXiv</i>, n.d.
  ieee: D. T. Phan <i>et al.</i>, “Breakdown of induced p±ip pairing in a superconductor-semiconductor
    hybrid,” <i>arXiv</i>. .
  ista: Phan DT, Senior JL, Ghazaryan A, Hatefipour M, Strickland WM, Shabani J, Serbyn
    M, Higginbotham AP. Breakdown of induced p±ip pairing in a superconductor-semiconductor
    hybrid. arXiv, 2107.03695.
  mla: Phan, Duc T., et al. “Breakdown of Induced P±ip Pairing in a Superconductor-Semiconductor
    Hybrid.” <i>ArXiv</i>, 2107.03695.
  short: D.T. Phan, J.L. Senior, A. Ghazaryan, M. Hatefipour, W.M. Strickland, J.
    Shabani, M. Serbyn, A.P. Higginbotham, ArXiv (n.d.).
date_created: 2021-09-21T08:41:02Z
date_published: 2021-07-08T00:00:00Z
date_updated: 2024-02-21T12:36:52Z
day: '08'
department:
- _id: MaSe
- _id: AnHi
- _id: MiLe
ec_funded: 1
external_id:
  arxiv:
  - '2107.03695'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://arxiv.org/abs/2107.03695
month: '07'
oa: 1
oa_version: Preprint
project:
- _id: 260C2330-B435-11E9-9278-68D0E5697425
  call_identifier: H2020
  grant_number: '754411'
  name: ISTplus - Postdoctoral Fellowships
publication: arXiv
publication_status: submitted
related_material:
  record:
  - id: '10851'
    relation: later_version
    status: public
  - id: '9636'
    relation: research_data
    status: public
status: public
title: Breakdown of induced p±ip pairing in a superconductor-semiconductor hybrid
type: preprint
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2021'
...