---
_id: '12278'
abstract:
- lang: eng
  text: Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are
    predicted to possess a gapless Dirac-like band structure. We report a comprehensive
    study on gated and optically doped samples by magnetooptical spectroscopy in the
    THz range. The quasi-classical analysis of the cyclotron resonance allowed the
    mapping of the band dispersion of Dirac charge carriers in a broad range of electron
    and hole doping. A smooth transition through the charge neutrality point between
    Dirac holes and electrons was observed. An additional peak coming from a second
    type of holes with an almost density-independent mass of around 0.04m0 was detected
    in the hole-doping range and attributed to an asymmetric spin splitting of the
    Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations
    could not be detected in present cyclotron resonance experiments.
acknowledgement: "This work was supported by the Austrian Science Funds (W1243, I
  3456-N27, I 5539-N).\r\nOpen Access Funding by the Austrian Science Fund (FWF)."
article_number: '2492'
article_processing_charge: Yes
article_type: original
author:
- first_name: Alexey
  full_name: Shuvaev, Alexey
  last_name: Shuvaev
- first_name: Uladzislau
  full_name: Dziom, Uladzislau
  id: 6A9A37C2-8C5C-11E9-AE53-F2FDE5697425
  last_name: Dziom
  orcid: 0000-0002-1648-0999
- first_name: Jan
  full_name: Gospodarič, Jan
  last_name: Gospodarič
- first_name: Elena G.
  full_name: Novik, Elena G.
  last_name: Novik
- first_name: Alena A.
  full_name: Dobretsova, Alena A.
  last_name: Dobretsova
- first_name: Nikolay N.
  full_name: Mikhailov, Nikolay N.
  last_name: Mikhailov
- first_name: Ze Don
  full_name: Kvon, Ze Don
  last_name: Kvon
- first_name: Andrei
  full_name: Pimenov, Andrei
  last_name: Pimenov
citation:
  ama: Shuvaev A, Dziom U, Gospodarič J, et al. Band structure near the Dirac Point
    in HgTe quantum wells with critical thickness. <i>Nanomaterials</i>. 2022;12(14).
    doi:<a href="https://doi.org/10.3390/nano12142492">10.3390/nano12142492</a>
  apa: Shuvaev, A., Dziom, U., Gospodarič, J., Novik, E. G., Dobretsova, A. A., Mikhailov,
    N. N., … Pimenov, A. (2022). Band structure near the Dirac Point in HgTe quantum
    wells with critical thickness. <i>Nanomaterials</i>. MDPI. <a href="https://doi.org/10.3390/nano12142492">https://doi.org/10.3390/nano12142492</a>
  chicago: Shuvaev, Alexey, Uladzislau Dziom, Jan Gospodarič, Elena G. Novik, Alena
    A. Dobretsova, Nikolay N. Mikhailov, Ze Don Kvon, and Andrei Pimenov. “Band Structure
    near the Dirac Point in HgTe Quantum Wells with Critical Thickness.” <i>Nanomaterials</i>.
    MDPI, 2022. <a href="https://doi.org/10.3390/nano12142492">https://doi.org/10.3390/nano12142492</a>.
  ieee: A. Shuvaev <i>et al.</i>, “Band structure near the Dirac Point in HgTe quantum
    wells with critical thickness,” <i>Nanomaterials</i>, vol. 12, no. 14. MDPI, 2022.
  ista: Shuvaev A, Dziom U, Gospodarič J, Novik EG, Dobretsova AA, Mikhailov NN, Kvon
    ZD, Pimenov A. 2022. Band structure near the Dirac Point in HgTe quantum wells
    with critical thickness. Nanomaterials. 12(14), 2492.
  mla: Shuvaev, Alexey, et al. “Band Structure near the Dirac Point in HgTe Quantum
    Wells with Critical Thickness.” <i>Nanomaterials</i>, vol. 12, no. 14, 2492, MDPI,
    2022, doi:<a href="https://doi.org/10.3390/nano12142492">10.3390/nano12142492</a>.
  short: A. Shuvaev, U. Dziom, J. Gospodarič, E.G. Novik, A.A. Dobretsova, N.N. Mikhailov,
    Z.D. Kvon, A. Pimenov, Nanomaterials 12 (2022).
date_created: 2023-01-16T10:02:31Z
date_published: 2022-07-20T00:00:00Z
date_updated: 2023-10-17T11:41:28Z
day: '20'
ddc:
- '530'
department:
- _id: ZhAl
doi: 10.3390/nano12142492
external_id:
  isi:
  - '000834401600001'
file:
- access_level: open_access
  checksum: efad6742f89f39a18bec63116dd689a0
  content_type: application/pdf
  creator: dernst
  date_created: 2023-01-30T11:16:54Z
  date_updated: 2023-01-30T11:16:54Z
  file_id: '12459'
  file_name: 2022_Nanomaterials_Shuvaev.pdf
  file_size: 464840
  relation: main_file
  success: 1
file_date_updated: 2023-01-30T11:16:54Z
has_accepted_license: '1'
intvolume: '        12'
isi: 1
issue: '14'
keyword:
- General Materials Science
- General Chemical Engineering
language:
- iso: eng
month: '07'
oa: 1
oa_version: Published Version
publication: Nanomaterials
publication_identifier:
  issn:
  - 2079-4991
publication_status: published
publisher: MDPI
quality_controlled: '1'
scopus_import: '1'
status: public
title: Band structure near the Dirac Point in HgTe quantum wells with critical thickness
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 12
year: '2022'
...
---
_id: '10858'
abstract:
- lang: eng
  text: The cost-effective conversion of low-grade heat into electricity using thermoelectric
    devices requires developing alternative materials and material processing technologies
    able to reduce the currently high device manufacturing costs. In this direction,
    thermoelectric materials that do not rely on rare or toxic elements such as tellurium
    or lead need to be produced using high-throughput technologies not involving high
    temperatures and long processes. Bi2Se3 is an obvious possible Te-free alternative
    to Bi2Te3 for ambient temperature thermoelectric applications, but its performance
    is still low for practical applications, and additional efforts toward finding
    proper dopants are required. Here, we report a scalable method to produce Bi2Se3
    nanosheets at low synthesis temperatures. We studied the influence of different
    dopants on the thermoelectric properties of this material. Among the elements
    tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation
    resulted in a significant improvement to the Bi2Se3 Seebeck coefficient and a
    reduction in the thermal conductivity in the direction of the hot-press axis,
    resulting in an overall 60% improvement in the thermoelectric figure of merit
    of Bi2Se3.
acknowledgement: "M.L., Y.Z., T.Z. and K.X. thank the China Scholarship Council for
  their scholarship\r\nsupport. Y.L. acknowledges funding from the European Union’s
  Horizon 2020 research and\r\ninnovation program under the Marie Sklodowska-Curie
  grant agreement No. 754411. J.L. thanks the ICREA Academia program and projects
  MICINN/FEDER RTI2018-093996-B-C31 and G.C. 2017 SGR 128. ICN2 acknowledges funding
  from the Generalitat de Catalunya 2017 SGR 327 and the Spanish MINECO ENE2017-85087-C3."
article_number: '1827'
article_processing_charge: No
article_type: original
author:
- first_name: Mengyao
  full_name: Li, Mengyao
  last_name: Li
- first_name: Yu
  full_name: Zhang, Yu
  last_name: Zhang
- first_name: Ting
  full_name: Zhang, Ting
  last_name: Zhang
- first_name: Yong
  full_name: Zuo, Yong
  last_name: Zuo
- first_name: Ke
  full_name: Xiao, Ke
  last_name: Xiao
- first_name: Jordi
  full_name: Arbiol, Jordi
  last_name: Arbiol
- first_name: Jordi
  full_name: Llorca, Jordi
  last_name: Llorca
- first_name: Yu
  full_name: Liu, Yu
  id: 2A70014E-F248-11E8-B48F-1D18A9856A87
  last_name: Liu
  orcid: 0000-0001-7313-6740
- first_name: Andreu
  full_name: Cabot, Andreu
  last_name: Cabot
citation:
  ama: Li M, Zhang Y, Zhang T, et al. Enhanced thermoelectric performance of n-type
    Bi2Se3 nanosheets through Sn doping. <i>Nanomaterials</i>. 2021;11(7). doi:<a
    href="https://doi.org/10.3390/nano11071827">10.3390/nano11071827</a>
  apa: Li, M., Zhang, Y., Zhang, T., Zuo, Y., Xiao, K., Arbiol, J., … Cabot, A. (2021).
    Enhanced thermoelectric performance of n-type Bi2Se3 nanosheets through Sn doping.
    <i>Nanomaterials</i>. MDPI. <a href="https://doi.org/10.3390/nano11071827">https://doi.org/10.3390/nano11071827</a>
  chicago: Li, Mengyao, Yu Zhang, Ting Zhang, Yong Zuo, Ke Xiao, Jordi Arbiol, Jordi
    Llorca, Yu Liu, and Andreu Cabot. “Enhanced Thermoelectric Performance of N-Type
    Bi2Se3 Nanosheets through Sn Doping.” <i>Nanomaterials</i>. MDPI, 2021. <a href="https://doi.org/10.3390/nano11071827">https://doi.org/10.3390/nano11071827</a>.
  ieee: M. Li <i>et al.</i>, “Enhanced thermoelectric performance of n-type Bi2Se3
    nanosheets through Sn doping,” <i>Nanomaterials</i>, vol. 11, no. 7. MDPI, 2021.
  ista: Li M, Zhang Y, Zhang T, Zuo Y, Xiao K, Arbiol J, Llorca J, Liu Y, Cabot A.
    2021. Enhanced thermoelectric performance of n-type Bi2Se3 nanosheets through
    Sn doping. Nanomaterials. 11(7), 1827.
  mla: Li, Mengyao, et al. “Enhanced Thermoelectric Performance of N-Type Bi2Se3 Nanosheets
    through Sn Doping.” <i>Nanomaterials</i>, vol. 11, no. 7, 1827, MDPI, 2021, doi:<a
    href="https://doi.org/10.3390/nano11071827">10.3390/nano11071827</a>.
  short: M. Li, Y. Zhang, T. Zhang, Y. Zuo, K. Xiao, J. Arbiol, J. Llorca, Y. Liu,
    A. Cabot, Nanomaterials 11 (2021).
date_created: 2022-03-18T09:45:02Z
date_published: 2021-07-14T00:00:00Z
date_updated: 2023-08-17T07:08:30Z
day: '14'
ddc:
- '540'
department:
- _id: MaIb
doi: 10.3390/nano11071827
ec_funded: 1
external_id:
  isi:
  - '000676570000001'
file:
- access_level: open_access
  checksum: f28a8b5cf80f5605828359bb398463b0
  content_type: application/pdf
  creator: dernst
  date_created: 2022-03-18T09:53:15Z
  date_updated: 2022-03-18T09:53:15Z
  file_id: '10859'
  file_name: 2021_Nanomaterials_Li.pdf
  file_size: 4867547
  relation: main_file
  success: 1
file_date_updated: 2022-03-18T09:53:15Z
has_accepted_license: '1'
intvolume: '        11'
isi: 1
issue: '7'
keyword:
- General Materials Science
- General Chemical Engineering
language:
- iso: eng
month: '07'
oa: 1
oa_version: Published Version
project:
- _id: 260C2330-B435-11E9-9278-68D0E5697425
  call_identifier: H2020
  grant_number: '754411'
  name: ISTplus - Postdoctoral Fellowships
publication: Nanomaterials
publication_identifier:
  issn:
  - 2079-4991
publication_status: published
publisher: MDPI
quality_controlled: '1'
scopus_import: '1'
status: public
title: Enhanced thermoelectric performance of n-type Bi2Se3 nanosheets through Sn
  doping
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 11
year: '2021'
...