---
_id: '15018'
abstract:
- lang: eng
  text: The epitaxial growth of a strained Ge layer, which is a promising candidate
    for the channel material of a hole spin qubit, has been demonstrated on 300 mm
    Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB)
    layers. The assessment of the layer and the interface qualities for a buried strained
    Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping
    confirmed that the reduction of the growth temperature enables the 2-dimensional
    growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless,
    dislocations at the top and/or bottom interface of the Ge layer were observed
    by means of electron channeling contrast imaging, suggesting the importance of
    the careful dislocation assessment. The interface abruptness does not depend on
    the selection of the precursor gases, but it is strongly influenced by the growth
    temperature which affects the coverage of the surface H-passivation. The mobility
    of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010
    /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the
    heterostructure thanks to the high Si0.3Ge0.7 SRB quality.
acknowledgement: The Ge project received funding from the European Union's Horizon
  Europe programme under the Grant Agreement 101069515 – IGNITE. Siltronic AG is acknowledged
  for providing the SRB wafers. This work was supported by Imec's Industrial Affiliation
  Program on Quantum Computing.
article_number: '108231'
article_processing_charge: No
article_type: original
author:
- first_name: Yosuke
  full_name: Shimura, Yosuke
  last_name: Shimura
- first_name: Clement
  full_name: Godfrin, Clement
  last_name: Godfrin
- first_name: Andriy
  full_name: Hikavyy, Andriy
  last_name: Hikavyy
- first_name: Roy
  full_name: Li, Roy
  last_name: Li
- first_name: Juan L
  full_name: Aguilera Servin, Juan L
  id: 2A67C376-F248-11E8-B48F-1D18A9856A87
  last_name: Aguilera Servin
  orcid: 0000-0002-2862-8372
- first_name: Georgios
  full_name: Katsaros, Georgios
  id: 38DB5788-F248-11E8-B48F-1D18A9856A87
  last_name: Katsaros
  orcid: 0000-0001-8342-202X
- first_name: Paola
  full_name: Favia, Paola
  last_name: Favia
- first_name: Han
  full_name: Han, Han
  last_name: Han
- first_name: Danny
  full_name: Wan, Danny
  last_name: Wan
- first_name: Kristiaan
  full_name: de Greve, Kristiaan
  last_name: de Greve
- first_name: Roger
  full_name: Loo, Roger
  last_name: Loo
citation:
  ama: Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge
    layers for quantum computing applications. <i>Materials Science in Semiconductor
    Processing</i>. 2024;174(5). doi:<a href="https://doi.org/10.1016/j.mssp.2024.108231">10.1016/j.mssp.2024.108231</a>
  apa: Shimura, Y., Godfrin, C., Hikavyy, A., Li, R., Aguilera Servin, J. L., Katsaros,
    G., … Loo, R. (2024). Compressively strained epitaxial Ge layers for quantum computing
    applications. <i>Materials Science in Semiconductor Processing</i>. Elsevier.
    <a href="https://doi.org/10.1016/j.mssp.2024.108231">https://doi.org/10.1016/j.mssp.2024.108231</a>
  chicago: Shimura, Yosuke, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan L Aguilera
    Servin, Georgios Katsaros, Paola Favia, et al. “Compressively Strained Epitaxial
    Ge Layers for Quantum Computing Applications.” <i>Materials Science in Semiconductor
    Processing</i>. Elsevier, 2024. <a href="https://doi.org/10.1016/j.mssp.2024.108231">https://doi.org/10.1016/j.mssp.2024.108231</a>.
  ieee: Y. Shimura <i>et al.</i>, “Compressively strained epitaxial Ge layers for
    quantum computing applications,” <i>Materials Science in Semiconductor Processing</i>,
    vol. 174, no. 5. Elsevier, 2024.
  ista: Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia
    P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge
    layers for quantum computing applications. Materials Science in Semiconductor
    Processing. 174(5), 108231.
  mla: Shimura, Yosuke, et al. “Compressively Strained Epitaxial Ge Layers for Quantum
    Computing Applications.” <i>Materials Science in Semiconductor Processing</i>,
    vol. 174, no. 5, 108231, Elsevier, 2024, doi:<a href="https://doi.org/10.1016/j.mssp.2024.108231">10.1016/j.mssp.2024.108231</a>.
  short: Y. Shimura, C. Godfrin, A. Hikavyy, R. Li, J.L. Aguilera Servin, G. Katsaros,
    P. Favia, H. Han, D. Wan, K. de Greve, R. Loo, Materials Science in Semiconductor
    Processing 174 (2024).
date_created: 2024-02-22T14:10:40Z
date_published: 2024-02-20T00:00:00Z
date_updated: 2024-02-26T10:36:35Z
day: '20'
ddc:
- '530'
department:
- _id: GeKa
- _id: NanoFab
doi: 10.1016/j.mssp.2024.108231
has_accepted_license: '1'
intvolume: '       174'
issue: '5'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
license: https://creativecommons.org/licenses/by/4.0/
main_file_link:
- open_access: '1'
  url: https://doi.org/10.1016/j.mssp.2024.108231
month: '02'
oa: 1
oa_version: Published Version
project:
- _id: 34c0acea-11ca-11ed-8bc3-8775e10fd452
  grant_number: '101069515'
  name: Integrated GermaNIum quanTum tEchnology
publication: Materials Science in Semiconductor Processing
publication_identifier:
  issn:
  - 1369-8001
publication_status: epub_ahead
publisher: Elsevier
quality_controlled: '1'
status: public
title: Compressively strained epitaxial Ge layers for quantum computing applications
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 174
year: '2024'
...