@article{15018,
  abstract     = {The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers. The assessment of the layer and the interface qualities for a buried strained Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping confirmed that the reduction of the growth temperature enables the 2-dimensional growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless, dislocations at the top and/or bottom interface of the Ge layer were observed by means of electron channeling contrast imaging, suggesting the importance of the careful dislocation assessment. The interface abruptness does not depend on the selection of the precursor gases, but it is strongly influenced by the growth temperature which affects the coverage of the surface H-passivation. The mobility of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010 /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the heterostructure thanks to the high Si0.3Ge0.7 SRB quality.},
  author       = {Shimura, Yosuke and Godfrin, Clement and Hikavyy, Andriy and Li, Roy and Aguilera Servin, Juan L and Katsaros, Georgios and Favia, Paola and Han, Han and Wan, Danny and de Greve, Kristiaan and Loo, Roger},
  issn         = {1369-8001},
  journal      = {Materials Science in Semiconductor Processing},
  keywords     = {Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science},
  number       = {5},
  publisher    = {Elsevier},
  title        = {{Compressively strained epitaxial Ge layers for quantum computing applications}},
  doi          = {10.1016/j.mssp.2024.108231},
  volume       = {174},
  year         = {2024},
}