[{"arxiv":1,"abstract":[{"text":"The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.","lang":"eng"}],"extern":"1","title":"Thermoelectric properties of Ho-doped Bi0.88Sb0.12","publication":"Journal of Materials Science","publisher":"Springer Nature","oa_version":"Preprint","date_created":"2022-08-08T08:28:20Z","status":"public","article_type":"original","external_id":{"arxiv":["1201.6304"]},"issue":"15","citation":{"ista":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. 2012. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. Journal of Materials Science. 47(15), 5729–5734.","short":"K.C. Lukas, G. Joshi, K.A. Modic, Z.F. Ren, C.P. Opeil, Journal of Materials Science 47 (2012) 5729–5734.","mla":"Lukas, K. C., et al. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>, vol. 47, no. 15, Springer Nature, 2012, pp. 5729–34, doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>.","ama":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. 2012;47(15):5729-5734. doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>","apa":"Lukas, K. C., Joshi, G., Modic, K. A., Ren, Z. F., &#38; Opeil, C. P. (2012). Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. Springer Nature. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>","chicago":"Lukas, K. C., G. Joshi, Kimberly A Modic, Z. F. Ren, and C. P. Opeil. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>. Springer Nature, 2012. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>.","ieee":"K. C. Lukas, G. Joshi, K. A. Modic, Z. F. Ren, and C. P. Opeil, “Thermoelectric properties of Ho-doped Bi0.88Sb0.12,” <i>Journal of Materials Science</i>, vol. 47, no. 15. Springer Nature, pp. 5729–5734, 2012."},"publication_identifier":{"issn":["0022-2461"],"eissn":["1573-4803"]},"page":"5729-5734","volume":47,"type":"journal_article","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","_id":"11751","year":"2012","date_published":"2012-08-01T00:00:00Z","author":[{"full_name":"Lukas, K. C.","last_name":"Lukas","first_name":"K. C."},{"first_name":"G.","last_name":"Joshi","full_name":"Joshi, G."},{"full_name":"Modic, Kimberly A","id":"13C26AC0-EB69-11E9-87C6-5F3BE6697425","first_name":"Kimberly A","orcid":"0000-0001-9760-3147","last_name":"Modic"},{"full_name":"Ren, Z. F.","last_name":"Ren","first_name":"Z. F."},{"full_name":"Opeil, C. P.","last_name":"Opeil","first_name":"C. P."}],"date_updated":"2022-08-11T09:34:39Z","doi":"10.1007/s10853-012-6463-6","article_processing_charge":"No","scopus_import":"1","quality_controlled":"1","day":"01","language":[{"iso":"eng"}],"month":"08","intvolume":"        47","publication_status":"published"},{"citation":{"apa":"Lukas, K. C., Joshi, G., Modic, K. A., Ren, Z. F., &#38; Opeil, C. P. (2012). Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. Springer Nature. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>","chicago":"Lukas, K. C., G. Joshi, Kimberly A Modic, Z. F. Ren, and C. P. Opeil. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>. Springer Nature, 2012. <a href=\"https://doi.org/10.1007/s10853-012-6463-6\">https://doi.org/10.1007/s10853-012-6463-6</a>.","ieee":"K. C. Lukas, G. Joshi, K. A. Modic, Z. F. Ren, and C. P. Opeil, “Thermoelectric properties of Ho-doped Bi0.88Sb0.12,” <i>Journal of Materials Science</i>, vol. 47, no. 15. Springer Nature, pp. 5729–5734, 2012.","mla":"Lukas, K. C., et al. “Thermoelectric Properties of Ho-Doped Bi0.88Sb0.12.” <i>Journal of Materials Science</i>, vol. 47, no. 15, Springer Nature, 2012, pp. 5729–34, doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>.","short":"K.C. Lukas, G. Joshi, K.A. Modic, Z.F. Ren, C.P. Opeil, Journal of Materials Science 47 (2012) 5729–5734.","ista":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. 2012. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. Journal of Materials Science. 47(15), 5729–5734.","ama":"Lukas KC, Joshi G, Modic KA, Ren ZF, Opeil CP. Thermoelectric properties of Ho-doped Bi0.88Sb0.12. <i>Journal of Materials Science</i>. 2012;47(15):5729-5734. doi:<a href=\"https://doi.org/10.1007/s10853-012-6463-6\">10.1007/s10853-012-6463-6</a>"},"month":"08","language":[{"iso":"eng"}],"publication_identifier":{"eissn":["1573-4803"],"issn":["0022-2461"]},"status":"public","issue":"15","day":"01","article_type":"original","intvolume":"        47","_id":"7074","year":"2012","publication_status":"published","volume":47,"page":"5729-5734","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","type":"journal_article","abstract":[{"lang":"eng","text":"The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K."}],"quality_controlled":"1","extern":"1","author":[{"last_name":"Lukas","first_name":"K. C.","full_name":"Lukas, K. C."},{"first_name":"G.","last_name":"Joshi","full_name":"Joshi, G."},{"first_name":"Kimberly A","last_name":"Modic","orcid":"0000-0001-9760-3147","full_name":"Modic, Kimberly A","id":"13C26AC0-EB69-11E9-87C6-5F3BE6697425"},{"first_name":"Z. F.","last_name":"Ren","full_name":"Ren, Z. F."},{"full_name":"Opeil, C. P.","last_name":"Opeil","first_name":"C. P."}],"date_published":"2012-08-01T00:00:00Z","article_processing_charge":"No","doi":"10.1007/s10853-012-6463-6","date_updated":"2021-01-12T08:11:43Z","date_created":"2019-11-19T13:36:54Z","oa_version":"None","publication":"Journal of Materials Science","title":"Thermoelectric properties of Ho-doped Bi0.88Sb0.12","publisher":"Springer Nature"}]