@article{11751,
  abstract     = {The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.},
  author       = {Lukas, K. C. and Joshi, G. and Modic, Kimberly A and Ren, Z. F. and Opeil, C. P.},
  issn         = {1573-4803},
  journal      = {Journal of Materials Science},
  number       = {15},
  pages        = {5729--5734},
  publisher    = {Springer Nature},
  title        = {{Thermoelectric properties of Ho-doped Bi0.88Sb0.12}},
  doi          = {10.1007/s10853-012-6463-6},
  volume       = {47},
  year         = {2012},
}

@article{7074,
  abstract     = {The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.},
  author       = {Lukas, K. C. and Joshi, G. and Modic, Kimberly A and Ren, Z. F. and Opeil, C. P.},
  issn         = {1573-4803},
  journal      = {Journal of Materials Science},
  number       = {15},
  pages        = {5729--5734},
  publisher    = {Springer Nature},
  title        = {{Thermoelectric properties of Ho-doped Bi0.88Sb0.12}},
  doi          = {10.1007/s10853-012-6463-6},
  volume       = {47},
  year         = {2012},
}