[{"ec_funded":1,"abstract":[{"lang":"eng","text":"We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum wires."}],"publication_status":"published","oa_version":"None","day":"08","status":"public","date_updated":"2023-10-03T12:51:59Z","external_id":{"isi":["000675595800006"]},"title":"Ge/Si quantum wires for quantum computing","publication":"2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021","scopus_import":"1","project":[{"grant_number":"335497","call_identifier":"FP7","name":"Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires","_id":"25517E86-B435-11E9-9278-68D0E5697425"}],"citation":{"ama":"Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>. IEEE; 2021. doi:<a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">10.1109/EDTM50988.2021.9420817</a>","mla":"Gao, Fei, et al. “Ge/Si Quantum Wires for Quantum Computing.” <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>, 9420817, IEEE, 2021, doi:<a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">10.1109/EDTM50988.2021.9420817</a>.","apa":"Gao, F., Zhang, J. Y., Wang, J. H., Ming, M., Wang, T., Zhang, J. J., … Guo, G. P. (2021). Ge/Si quantum wires for quantum computing. In <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>. Virtual, Online: IEEE. <a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">https://doi.org/10.1109/EDTM50988.2021.9420817</a>","short":"F. Gao, J.Y. Zhang, J.H. Wang, M. Ming, T. Wang, J.J. Zhang, H. Watzinger, J. Kukucka, L. Vukušić, G. Katsaros, K. Wang, G. Xu, H.O. Li, G.P. Guo, in:, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, IEEE, 2021.","ista":"Gao F, Zhang JY, Wang JH, Ming M, Wang T, Zhang JJ, Watzinger H, Kukucka J, Vukušić L, Katsaros G, Wang K, Xu G, Li HO, Guo GP. 2021. Ge/Si quantum wires for quantum computing. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. EDTM: IEEE Electron Devices Technology and Manufacturing Conference, 9420817.","ieee":"F. Gao <i>et al.</i>, “Ge/Si quantum wires for quantum computing,” in <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>, Virtual, Online, 2021.","chicago":"Gao, Fei, Jie Yin Zhang, Jian Huan Wang, Ming Ming, Tina Wang, Jian Jun Zhang, Hannes Watzinger, et al. “Ge/Si Quantum Wires for Quantum Computing.” In <i>2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021</i>. IEEE, 2021. <a href=\"https://doi.org/10.1109/EDTM50988.2021.9420817\">https://doi.org/10.1109/EDTM50988.2021.9420817</a>."},"date_published":"2021-04-08T00:00:00Z","_id":"9464","author":[{"last_name":"Gao","first_name":"Fei","full_name":"Gao, Fei"},{"first_name":"Jie Yin","full_name":"Zhang, Jie Yin","last_name":"Zhang"},{"first_name":"Jian Huan","full_name":"Wang, Jian Huan","last_name":"Wang"},{"first_name":"Ming","full_name":"Ming, Ming","last_name":"Ming"},{"last_name":"Wang","full_name":"Wang, Tina","first_name":"Tina"},{"last_name":"Zhang","first_name":"Jian Jun","full_name":"Zhang, Jian Jun"},{"full_name":"Watzinger, Hannes","first_name":"Hannes","last_name":"Watzinger","id":"35DF8E50-F248-11E8-B48F-1D18A9856A87"},{"last_name":"Kukucka","id":"3F5D8856-F248-11E8-B48F-1D18A9856A87","full_name":"Kukucka, Josip","first_name":"Josip"},{"id":"31E9F056-F248-11E8-B48F-1D18A9856A87","last_name":"Vukušić","orcid":"0000-0003-2424-8636","full_name":"Vukušić, Lada","first_name":"Lada"},{"full_name":"Katsaros, Georgios","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros","orcid":"0000-0001-8342-202X"},{"full_name":"Wang, Ke","first_name":"Ke","last_name":"Wang"},{"last_name":"Xu","full_name":"Xu, Gang","first_name":"Gang"},{"first_name":"Hai Ou","full_name":"Li, Hai Ou","last_name":"Li"},{"first_name":"Guo Ping","full_name":"Guo, Guo Ping","last_name":"Guo"}],"type":"conference","publisher":"IEEE","year":"2021","language":[{"iso":"eng"}],"doi":"10.1109/EDTM50988.2021.9420817","isi":1,"quality_controlled":"1","publication_identifier":{"isbn":["9781728181769"]},"month":"04","article_processing_charge":"No","user_id":"2DF688A6-F248-11E8-B48F-1D18A9856A87","conference":{"location":"Virtual, Online","start_date":"2021-04-08","end_date":"2021-04-11","name":"EDTM: IEEE Electron Devices Technology and Manufacturing Conference"},"department":[{"_id":"GeKa"}],"acknowledgement":"This work was supported by the National Key R&D Program of China (Grant No. 2016YFA0301700) and the ERC Starting Grant no. 335497.","article_number":"9420817","date_created":"2021-06-06T22:01:29Z"}]