---
_id: '14985'
abstract:
- lang: eng
  text: Lead sulfide (PbS) presents large potential in thermoelectric application
    due to its earth-abundant S element. However, its inferior average ZT (ZTave)
    value makes PbS less competitive with its analogs PbTe and PbSe. To promote its
    thermoelectric performance, this study implements strategies of continuous Se
    alloying and Cu interstitial doping to synergistically tune thermal and electrical
    transport properties in n-type PbS. First, the lattice parameter of 5.93 Å in
    PbS is linearly expanded to 6.03 Å in PbS0.5Se0.5 with increasing Se alloying
    content. This expanded lattice in Se-alloyed PbS not only intensifies phonon scattering
    but also facilitates the formation of Cu interstitials. Based on the PbS0.6Se0.4
    content with the minimal lattice thermal conductivity, Cu interstitials are introduced
    to improve the electron density, thus boosting the peak power factor, from 3.88 μW cm−1 K−2
    in PbS0.6Se0.4 to 20.58 μW cm−1 K−2 in PbS0.6Se0.4−1%Cu. Meanwhile, the lattice
    thermal conductivity in PbS0.6Se0.4−x%Cu (x = 0–2) is further suppressed due to
    the strong strain field caused by Cu interstitials. Finally, with the lowered
    thermal conductivity and high electrical transport properties, a peak ZT ~1.1
    and ZTave ~0.82 can be achieved in PbS0.6Se0.4 − 1%Cu at 300–773K, which outperforms
    previously reported n-type PbS.
acknowledgement: 'The authors would like to acknowledge the strong supportof microstructure
  observation from Center for HighPressure Science and Technology Advanced Research(HPSTAR).
  We acknowledge the financial support fromthe  National  Natural  Science  Foundation  of  China:52172236,
  the Fundamental Research Funds for theCentral Universities: xtr042021007, Top Young
  TalentsProgramme of Xi''an Jiaotong University and NationalScience Fund for Distinguished
  Young Scholars: 51925101.'
article_processing_charge: Yes
article_type: original
author:
- first_name: Zhengtao
  full_name: Liu, Zhengtao
  last_name: Liu
- first_name: Tao
  full_name: Hong, Tao
  last_name: Hong
- first_name: Liqing
  full_name: Xu, Liqing
  last_name: Xu
- first_name: Sining
  full_name: Wang, Sining
  last_name: Wang
- first_name: Xiang
  full_name: Gao, Xiang
  last_name: Gao
- first_name: Cheng
  full_name: Chang, Cheng
  id: 9E331C2E-9F27-11E9-AE48-5033E6697425
  last_name: Chang
  orcid: 0000-0002-9515-4277
- first_name: Xiangdong
  full_name: Ding, Xiangdong
  last_name: Ding
- first_name: Yu
  full_name: Xiao, Yu
  last_name: Xiao
- first_name: Li‐Dong
  full_name: Zhao, Li‐Dong
  last_name: Zhao
citation:
  ama: Liu Z, Hong T, Xu L, et al. Lattice expansion enables interstitial doping to
    achieve a high average ZT in n‐type PbS. <i>Interdisciplinary Materials</i>. 2023;2(1):161-170.
    doi:<a href="https://doi.org/10.1002/idm2.12056">10.1002/idm2.12056</a>
  apa: Liu, Z., Hong, T., Xu, L., Wang, S., Gao, X., Chang, C., … Zhao, L. (2023).
    Lattice expansion enables interstitial doping to achieve a high average ZT in
    n‐type PbS. <i>Interdisciplinary Materials</i>. Wiley. <a href="https://doi.org/10.1002/idm2.12056">https://doi.org/10.1002/idm2.12056</a>
  chicago: Liu, Zhengtao, Tao Hong, Liqing Xu, Sining Wang, Xiang Gao, Cheng Chang,
    Xiangdong Ding, Yu Xiao, and Li‐Dong Zhao. “Lattice Expansion Enables Interstitial
    Doping to Achieve a High Average ZT in N‐type PbS.” <i>Interdisciplinary Materials</i>.
    Wiley, 2023. <a href="https://doi.org/10.1002/idm2.12056">https://doi.org/10.1002/idm2.12056</a>.
  ieee: Z. Liu <i>et al.</i>, “Lattice expansion enables interstitial doping to achieve
    a high average ZT in n‐type PbS,” <i>Interdisciplinary Materials</i>, vol. 2,
    no. 1. Wiley, pp. 161–170, 2023.
  ista: Liu Z, Hong T, Xu L, Wang S, Gao X, Chang C, Ding X, Xiao Y, Zhao L. 2023.
    Lattice expansion enables interstitial doping to achieve a high average ZT in
    n‐type PbS. Interdisciplinary Materials. 2(1), 161–170.
  mla: Liu, Zhengtao, et al. “Lattice Expansion Enables Interstitial Doping to Achieve
    a High Average ZT in N‐type PbS.” <i>Interdisciplinary Materials</i>, vol. 2,
    no. 1, Wiley, 2023, pp. 161–70, doi:<a href="https://doi.org/10.1002/idm2.12056">10.1002/idm2.12056</a>.
  short: Z. Liu, T. Hong, L. Xu, S. Wang, X. Gao, C. Chang, X. Ding, Y. Xiao, L. Zhao,
    Interdisciplinary Materials 2 (2023) 161–170.
date_created: 2024-02-14T12:12:17Z
date_published: 2023-01-01T00:00:00Z
date_updated: 2024-02-19T10:01:26Z
day: '01'
ddc:
- '540'
department:
- _id: MaIb
doi: 10.1002/idm2.12056
file:
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  creator: dernst
  date_created: 2024-02-19T09:58:32Z
  date_updated: 2024-02-19T09:58:32Z
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has_accepted_license: '1'
intvolume: '         2'
issue: '1'
language:
- iso: eng
month: '01'
oa: 1
oa_version: Published Version
page: 161-170
publication: Interdisciplinary Materials
publication_identifier:
  eissn:
  - 2767-441X
publication_status: published
publisher: Wiley
quality_controlled: '1'
status: public
title: Lattice expansion enables interstitial doping to achieve a high average ZT
  in n‐type PbS
tmp:
  image: /images/cc_by.png
  legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
  name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
  short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 2
year: '2023'
...