---
_id: '9626'
abstract:
- lang: eng
  text: SnSe, a wide-bandgap semiconductor, has attracted significant attention from
    the thermoelectric (TE) community due to its outstanding TE performance deriving
    from the ultralow thermal conductivity and advantageous electronic structures.
    Here, we promoted the TE performance of n-type SnSe polycrystals through bandgap
    engineering and vacancy compensation. We found that PbTe can significantly reduce
    the wide bandgap of SnSe to reduce the impurity transition energy, largely enhancing
    the carrier concentration. Also, PbTe-induced crystal symmetry promotion increases
    the carrier mobility, preserving large Seebeck coefficient. Consequently, a maximum
    ZT of ∼1.4 at 793 K is obtained in Br doped SnSe–13%PbTe. Furthermore, we found
    that extra Sn in n-type SnSe can compensate for the intrinsic Sn vacancies and
    form electron donor-like metallic Sn nanophases. The Sn nanophases near the grain
    boundary could also reduce the intergrain energy barrier which largely enhances
    the carrier mobility. As a result, a maximum ZT value of ∼1.7 at 793 K and an
    average ZT (ZTave) of ∼0.58 in 300–793 K are achieved in Br doped Sn1.08Se–13%PbTe.
    Our findings provide a novel strategy to promote the TE performance in wide-bandgap
    semiconductors.
acknowledgement: This work was supported by National Natural Science Foundation of
  China (51772012), National Key Research and Development Program of China (2018YFA0702100
  and 2018YFB0703600), the Beijing Natural Science Foundation (JQ18004). This work
  was also supported by Lise Meitner Project (M2889-N) and the National Postdoctoral
  Program for Innovative Talents (BX20200028). L.D.Z. appreciates the support of the
  High Performance Computing (HPC) resources at Beihang University, the National Science
  Fund for Distinguished Young Scholars (51925101), and center for High Pressure Science
  and Technology Advanced Research (HPSTAR) for SEM measurements.
article_number: '100452'
article_processing_charge: No
article_type: original
author:
- first_name: Lizhong
  full_name: Su, Lizhong
  last_name: Su
- first_name: Tao
  full_name: Hong, Tao
  last_name: Hong
- first_name: Dongyang
  full_name: Wang, Dongyang
  last_name: Wang
- first_name: Sining
  full_name: Wang, Sining
  last_name: Wang
- first_name: Bingchao
  full_name: Qin, Bingchao
  last_name: Qin
- first_name: Mengmeng
  full_name: Zhang, Mengmeng
  last_name: Zhang
- first_name: Xiang
  full_name: Gao, Xiang
  last_name: Gao
- first_name: Cheng
  full_name: Chang, Cheng
  id: 9E331C2E-9F27-11E9-AE48-5033E6697425
  last_name: Chang
  orcid: 0000-0002-9515-4277
- first_name: Li Dong
  full_name: Zhao, Li Dong
  last_name: Zhao
citation:
  ama: Su L, Hong T, Wang D, et al. Realizing high doping efficiency and thermoelectric
    performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation.
    <i>Materials Today Physics</i>. 2021;20. doi:<a href="https://doi.org/10.1016/j.mtphys.2021.100452">10.1016/j.mtphys.2021.100452</a>
  apa: Su, L., Hong, T., Wang, D., Wang, S., Qin, B., Zhang, M., … Zhao, L. D. (2021).
    Realizing high doping efficiency and thermoelectric performance in n-type SnSe
    polycrystals via bandgap engineering and vacancy compensation. <i>Materials Today
    Physics</i>. Elsevier. <a href="https://doi.org/10.1016/j.mtphys.2021.100452">https://doi.org/10.1016/j.mtphys.2021.100452</a>
  chicago: Su, Lizhong, Tao Hong, Dongyang Wang, Sining Wang, Bingchao Qin, Mengmeng
    Zhang, Xiang Gao, Cheng Chang, and Li Dong Zhao. “Realizing High Doping Efficiency
    and Thermoelectric Performance in N-Type SnSe Polycrystals via Bandgap Engineering
    and Vacancy Compensation.” <i>Materials Today Physics</i>. Elsevier, 2021. <a
    href="https://doi.org/10.1016/j.mtphys.2021.100452">https://doi.org/10.1016/j.mtphys.2021.100452</a>.
  ieee: L. Su <i>et al.</i>, “Realizing high doping efficiency and thermoelectric
    performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation,”
    <i>Materials Today Physics</i>, vol. 20. Elsevier, 2021.
  ista: Su L, Hong T, Wang D, Wang S, Qin B, Zhang M, Gao X, Chang C, Zhao LD. 2021.
    Realizing high doping efficiency and thermoelectric performance in n-type SnSe
    polycrystals via bandgap engineering and vacancy compensation. Materials Today
    Physics. 20, 100452.
  mla: Su, Lizhong, et al. “Realizing High Doping Efficiency and Thermoelectric Performance
    in N-Type SnSe Polycrystals via Bandgap Engineering and Vacancy Compensation.”
    <i>Materials Today Physics</i>, vol. 20, 100452, Elsevier, 2021, doi:<a href="https://doi.org/10.1016/j.mtphys.2021.100452">10.1016/j.mtphys.2021.100452</a>.
  short: L. Su, T. Hong, D. Wang, S. Wang, B. Qin, M. Zhang, X. Gao, C. Chang, L.D.
    Zhao, Materials Today Physics 20 (2021).
date_created: 2021-07-04T22:01:24Z
date_published: 2021-06-03T00:00:00Z
date_updated: 2023-08-10T13:56:31Z
day: '03'
department:
- _id: MaIb
doi: 10.1016/j.mtphys.2021.100452
external_id:
  isi:
  - '000703159600010'
intvolume: '        20'
isi: 1
language:
- iso: eng
month: '06'
oa_version: None
publication: Materials Today Physics
publication_identifier:
  eissn:
  - 2542-5293
publication_status: published
publisher: Elsevier
quality_controlled: '1'
scopus_import: '1'
status: public
title: Realizing high doping efficiency and thermoelectric performance in n-type SnSe
  polycrystals via bandgap engineering and vacancy compensation
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 20
year: '2021'
...