All matrix files have the same format. Within each column the bias voltage is changed. Each column corresponds to either a different gate voltage or magnetic field. 
The voltage values are given in mV, the current values in pA. The files labelled as DI are differential conductance measurements, those labbeled as I are current measurements

Fig4b: Vbias has been swept from (-3.5)- 3.5mV and the gate voltage from (290)-(367.77)mV.  
The Lockin excitation was 10uV and the used bias division 100. The total resistance of electronics and filters in the setup was 23KOhm. 

Fig4c: Vbias has been swept from (-1)- 1mV and the parallel magnetic field from (8.8)-(-8.8)T. The gate voltage was kept constant at 320.9mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm. 

Fig4d: Vbias has been swept from (-1)- 1mV and the perpendicular magnetic field from (2.75)-(-2.75)T. The gate voltage was kept constant at 320.9mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm. 

Fig4e: Vbias has been swept from (-1)- 1mV and the angle of the 1Tesla applied field from 0-360 degrees. The gate voltage was kept constant at 320.9mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm. 

Fig4f: Vbias has been swept from (-1)- 1mV and the parallel magnetic field from (8.8)-(-8.8)T. The gate voltage was kept constant at 327.92mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm. 

Fig4g: Vbias has been swept from (-1)- 1mV and the perpendicular magnetic field from (-2.75)-(2.75)T. The gate voltage was kept constant at 327.92mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm. 

Fig4h: Vbias has been swept from (-0.55) - (0.65)mV and the perpendicular magnetic field from (0)-(1.76)T. The gate voltage was kept constant at 327.92mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm.

Fig5a: Vbias has been swept from (-1) - (1)mV and the perpendicular magnetic field from (2.6)-(-2.75)T. The gate voltage was kept constant at 510.48mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm.  

Fig5b: Vbias has been swept from (-1) - (1)mV and the perpendicular magnetic field from (-2.75)-(2.75)T. The gate voltage was kept constant at 550mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm. 

ForFig5c/d: Vbias has been swept from (-1) - (1)mV and the perpendicular magnetic field from (-2.75)-(2.75)T. The gate voltage was kept constant at 540mV   
The Lockin excitation was 10uV and the used bias division 1000. The total resistance of electronics and filters in the setup was 32KOhm.  

Fig6b and c: Current measurements. Vbias for both devices 0.2mV. The gate voltage of the first device was swept from (-50)-(50)mV while for the second device from 0 - (950)mV. 
The used bias division was 100. The total resistance of electronics and filters in the setup was 1MOhm.